An oxide semiconductor layer which is intrinsic or substantially intrinsic and includes a crystalline region in a surface portion of the oxide semiconductor layer is used for the transistors. An intrinsic or substantially intrinsic semiconductor from which an impurity which is to be an electron donor (donor) is removed from an oxide semiconductor and which has a larger energy gap than a silicon semiconductor is used. Electrical characteristics of the transistors can be controlled by controlling the potential of a pair of conductive films which are provided on opposite sides from each other with respect to the oxide semiconductor layer, each with an insulating film arranged therebetween, so that the position of a channel formed in the oxide semiconductor layer is determined.

A display device is disclosed that may include a first active layer disposed on a substrate, a scan line disposed on the first active layer, extending in a first direction and including a first protruding portion protruding in a second direction crossing the first direction, a first compensation control line disposed on the first active layer, extending in the first direction and spaced apart from the scan line in the second direction, and a second active layer disposed on the scan line and the first compensation control line, overlapping the scan line and the first compensation control line and including a second protruding portion protruding in the first direction. The first protruding portion may be positioned outside the second active layer in the first direction in a plan view.

An embodiment of the application discloses a panel and a manufacturing method thereof. In the panel, a thin-film transistor layer, a first conductive layer, a light-emitting diode (LED), and a second conductive layer are sequentially disposed on a substrate. The LED includes a first end and a second end. The first end is disposed on the first electrode. The second end is disposed on the second electrode. The second conductive layer includes a first conductive portion and a second conductive portion. The first conductive portion is electrically connected to the first end and the first electrode. The second conductive portion is electrically connected to the second end and the second electrode.

A display device includes a base layer including a display area and a non-display area, a pixel circuit layer disposed on a front surface of the base layer and including a driving transistor and a switch transistor, and an antistatic circuit layer disposed on a rear surface of the base layer and including at least one electrostatic diode.

A display device may include a plurality of pixels each including a light emitting element. A first scan line and a second scan line, are disposed in each of the pixels. A data line is disposed in each of the pixels. A power line is disposed in each of the pixels. A reference voltage line is disposed in each of the pixels. A first transistor controls a current of the light emitting element. A second transistor is connected between the data line and a first gate electrode of the first transistor. A third transistor is connected between the reference voltage line and a first electrode of the first transistor. A fourth transistor is connected between the power line and a second electrode of the first transistor. The fourth transistor may be a transistor of a type different from that of the first to third transistors.

A pixel circuit includes first to fifth transistors, a capacitor, and a light emitting element. The first transistor is coupled between first and second power lines, and includes a gate electrode coupled to a first node and a back-gate electrode coupled to a second node. The second transistor is coupled between a data line and the first node, and includes a gate electrode coupled to a first scan line. The third transistor is coupled between a third power line and the first node, and includes a gate electrode coupled to a reference scan line. The fourth transistor is coupled between a second node and a fourth power line, and includes a gate electrode coupled to a second scan line. The fifth transistor is coupled between a first power line and the one electrode of the first transistor, and includes a gate electrode coupled to a light-emitting control line.

An aperture ratio of a semiconductor device is improved. A driver circuit and a pixel are provided over one substrate, and a first thin film transistor in the driver circuit and a second thin film transistor in the pixel each include a gate electrode layer, a gate insulating layer over the gate electrode layer, an oxide semiconductor layer over the gate insulating layer, source and drain electrode layers over the oxide semiconductor layer, and an oxide insulating layer in contact with part of the oxide semiconductor layer over the gate insulating layer, the oxide semiconductor layer, and the source and drain electrode layers. The gate electrode layer, the gate insulating layer, the oxide semiconductor layer, the source and drain electrode layers, and the oxide insulating layer of the second thin film transistor each have a light-transmitting property.

Provided are a display panel, a manufacturing method thereof, and a display device. A first display region of the display panel includes first pixel units and first drive circuits, a second display region includes second pixel units and second drive circuits, wherein a pixel unit density of the first pixel units is less than a pixel unit density of the second pixel units, a number of first additional transistors in the first drive circuit is less than a number of second additional transistors in the second drive circuit, and an area of the orthographic projection of a channel area of the first drive transistor on the base substrate is less than an area of the orthographic projection of a channel area of the second drive transistor on the base substrate.

A display device includes: a substrate including a display area including a first pixel area, a component area adjacent to the display area, and a non-display area adjacent to the display area, where the component area includes a second pixel area and a transmission area, and the non-display area includes a bending area; a first inorganic layer continuously arranged in the transmission area on the substrate, where a lower opening overlapping the bending area is defined through the first inorganic layer; a blocking layer on the first inorganic layer, a blocking layer opening overlapping the transmission area and an intermediate opening overlapping the lower opening are defined through the blocking layer; and a display element layer on the blocking layer, where the display element layer includes a first display element overlapping the first pixel area and a second display element overlapping the second pixel area.

A novel display apparatus is provided. The display apparatus includes a first layer including a plurality of pixel circuits, a second layer provided over the first layer, a plurality of optical lenses provided over the second layer, a display region, and a plurality of light-receiving regions. The display region includes a first pixel circuit provided in the first layer and a light-emitting device provided in the second layer. The light-receiving region includes a second pixel circuit provided in the first layer and a light-receiving device provided in the second layer. The plurality of light-receiving regions are provided around the display region. The optical lens is provided at a position overlapping with the light-receiving region.