The present disclosure provides a transistor device, a manufacturing method thereof, a display substrate and a display device. The transistor device includes a base substrate, as well as a first transistor and a second transistor that are disposed on the base substrate. The first transistor includes a first active layer. The second transistor includes a second gate. The first active layer and the second gate are disposed in the same layer.

A display panel and a display device are provided. The display panel includes: a pixel circuit including a driving transistor, a first transistor, and a second transistor; a light-emitting element; a first signal line connected to a gate of the first transistor; a second signal line connected to a gate of the second transistor; and a first capacitor. A source or drain of the first transistor is connected to a gate of the driving transistor; and a source or drain of the second transistor is connected to a source or drain of the driving transistor. When being projected on a surface of the display panel, the second signal line is located between the gate of the driving transistor and the first signal line, or the first signal line and the second signal line are located at two sides of the gate of the driving transistor respectively.

A display device includes: a substrate; an inorganic insulating layer arranged on the substrate; a plurality of display elements arranged on the organic insulating layer and including a plurality of first display elements and a plurality of second display elements; a lower line arranged between the substrate and the organic insulating layer, and electrically connecting one of the plurality of first display elements and another one of the plurality of first display elements to each other; and an upper line arranged on the organic insulating layer, and electrically connecting one of the plurality of second display elements and the other one of the plurality of second display elements to each other.

A semiconductor device with high reliability is provided. The semiconductor device includes a first transistor, a second transistor, a capacitor, and first to fourth wirings. The first transistor includes a first gate and a second gate, and one of a source and a drain of the first transistor is connected to the first wiring and the second gate, and the other of the source and the drain is connected to one of a source and a drain of the second transistor and one electrode of the capacitor. A gate of the second transistor is connected to the other electrode of the capacitor, and the other of the source and the drain of the second transistor is electrically connected to the second wiring. The first wiring is supplied with a first potential, and the second wiring is supplied with a second potential and a third potential alternately. The third wiring is connected to the first gate and supplied with a first signal. The fourth wiring is connected to the gate of the second transistor and supplied with a second signal obtained by inverting the first signal.

A display device includes a polycrystalline semiconductor including a channel and electrodes of a driving transistor; a gate electrode of the driving transistor on the channel of the driving transistor; a first storage electrode on the gate electrode of the driving transistor; a light blocking layer of a first transistor and a light blocking layer of a second transistor; an oxide semiconductor including a channel and electrodes of the first transistor, and a channel and electrodes of the second transistor; a gate electrode of the first transistor on the channel of the first transistor; and a gate electrode of the second transistor on the channel of the second transistor. The light blocking layer of the first transistor and the first storage electrode are on a same layer, and the light blocking layer of the second transistor and the gate electrode of the driving transistor are on a same layer.

A thin film transistor substrate and a display device comprising the same are provided. The thin film transistor substrate comprises a first thin film transistor and a second thin film transistor on a base substrate, wherein the first thin film transistor includes a first active layer on the base substrate, and a first gate electrode spaced apart from the first active layer, the second thin film transistor includes a second active layer on the base substrate, and a second gate electrode spaced apart from the second active layer, and a mobility of the first active layer is greater than a mobility of the second active layer.

An electroluminescent display device includes a substrate divided into a display area and a non-display area, a first light-blocking layer and a data line disposed on the substrate in the display area, a first buffer layer disposed on the first light-blocking layer and the data line, a semiconductor layer disposed on an upper portion of the first buffer layer and made of an oxide semiconductor, a gate insulating layer disposed on the semiconductor layer, a gate electrode disposed on the gate insulating layer, a protective layer and a first planarization layer disposed on an upper portion of the gate electrode, a drain electrode disposed on the protective layer exposed by removing a partial area of the first planarization layer, a second planarization layer disposed on the drain electrode and the first planarization layer, and a light-emitting element disposed on an upper portion of the second planarization layer and including an anode, a light-emitting part, and a cathode.

An active matrix substrate includes: a first oxide semiconductor layer including a first channel region; a first gate electrode disposed on the substrate side of the first oxide semiconductor layer; a channel protection layer disposed on a side of the first oxide semiconductor layer opposite to the substrate and covering the first channel region; a first TFT having a first source electrode and a first drain electrode in an upper layer of the channel protection layer; a second oxide semiconductor layer; a second gate electrode disposed on a side of the second oxide semiconductor layer opposite to the substrate; and the second TFT having a second source electrode and a second drain electrode disposed on an interlayer insulating layer that covers the second gate electrode, wherein the first oxide semiconductor layer and the second oxide semiconductor layer are formed of the same layered oxide semiconductor film, the layered oxide semiconductor film has a layered structure including a high mobility oxide semiconductor film and a low mobility oxide semiconductor film disposed on the substrate side of the high mobility oxide semiconductor film and having a lower mobility than a mobility of the high mobility oxide semiconductor film, and the channel protection layer of the first TFT and the gate insulating layer of the second TFT are formed of the same insulating film.

A thin film transistor substrate and a display device comprising the same are provided, in which the thin film transistor substrate comprises a first thin film transistor on a base substrate, and a second thin film transistor on the first thin film transistor, wherein the first thin film transistor includes a first active layer on the base substrate, a first gate electrode spaced apart from the first active layer, and a first source electrode and a first drain electrode, which are spaced apart from each other and connected to the first active layer, the second thin film transistor includes a second active layer on the base substrate, a second gate electrode spaced apart from the second active layer, and a second source electrode and a second drain electrode, which are spaced apart from each other and connected to the second active layer, and one of the first source electrode and the first drain electrode is connected to one of the second source electrode and the second drain electrode.

An electronic device includes a substrate, a driving element, a conductive layer, and an electronic element is provided. The driving element is disposed on the substrate. The conductive layer is disposed on the substrate, wherein there is a first distance (B) between the driving element and an edge of the conductive layer. The electronic element is disposed on the conductive layer and is electrically connected to the driving element, wherein there is a second distance (A) between the electronic element and the edge of the conductive layer, and the first distance (B) is greater than the second distance (A).