An array substrate, a method for manufacturing an array substrate, and a display panel are provided. The array substrate includes a substrate and a thin film transistor layer arranged on the substrate. The thin film transistor layer includes a plurality of thin film transistors. The thin film transistors each include an active layer, a source/drain, a first gate, a second gate, and a first insulating layer. The first gate and the second gate are electrically connected through the through hole. The problems of difficulty in etching and excessively long etching time are avoided while reducing the gate resistance of the thin film transistor.

An array substrate and a manufacturing method thereof are provided. A patterned metal member of the array substrate includes a patterned first metal layer, a patterned second metal layer, and a patterned copper layer which are sequentially disposed on a substrate. An etching rate at which an etching solution etches the second metal layer is less than another etching rate at which the etching solution etches the first metal layer. An adhesion force between the patterned first metal layer and the substrate is greater than another adhesion force between the patterned copper layer and the substrate.

A display device includes a substrate including a display area including pixel areas and a non-display area adjacent to the display area; and a pixel disposed in each of the pixel areas. The pixel includes a sub-electrode, a first conductive line, and a second conductive line on the substrate; a first insulating layer over the sub-electrode and the first and second conductive lines; first to fourth electrodes on the first insulating layer; a second insulating layer over the first and second electrodes to completely overlap the first and second electrodes, the second insulating layer exposing the third and fourth electrodes; light emitting elements between the first and second electrodes; a first contact electrode on the first electrode; and a second contact electrode on the second electrode.

The reliability of a transistor including an oxide semiconductor can be improved by suppressing a change in electrical characteristics. A transistor included in a semiconductor device includes a first oxide semiconductor film over a first insulating film, a gate insulating film over the first oxide semiconductor film, a second oxide semiconductor film over the gate insulating film, and a second insulating film over the first oxide semiconductor film and the second oxide semiconductor film. The first oxide semiconductor film includes a channel region in contact with the gate insulating film, a source region in contact with the second insulating film, and a drain region in contact with the second insulating film. The second oxide semiconductor film has a higher carrier density than the first oxide semiconductor film.

A display apparatus includes a first semiconductor layer, a first gate insulating layer, a first conductive layer, an etch stop layer, a second gate insulating layer, a second conductive layer, a first interlayer insulating layer, a second semiconductor layer, a third gate insulating layer, a second interlayer insulating layer, and a first connection electrode layer that are sequentially stacked. The first connection electrode layer includes a first connection electrode contacting the first semiconductor layer via a contact hole defined in the first gate insulating layer, the etch stop layer, the second gate insulating layer, the first interlayer insulating layer, the third gate insulating layer, and the second interlayer insulating layer.

A display device includes conductive layers including wires and conductive patterns in a display area and a pad area, a via layer on the conductive layers, a first electrode and a second electrode on the via layer in the display area and spaced apart from each other, a first insulating layer on the first electrode and the second electrode, light emitting elements on the first electrode and the second electrode spaced apart from each other on the first insulating layer, and a first connection electrode on the first electrode and electrically contacting the light emitting elements, and a second connection electrode on the second electrode and electrically contacting the light emitting elements, each of the conductive layers includes a first metal layer and a second metal layer on the first metal layer, and the second metal layer contains copper and has a grain size of about 155 nm or less.

An object is to provide a display device with excellent display characteristics, where a pixel circuit and a driver circuit provided over one substrate are formed using transistors which have different structures corresponding to characteristics of the respective circuits. The driver circuit portion includes a driver circuit transistor in which a gate electrode layer, a source electrode layer, and a drain electrode layer are formed using a metal film, and a channel layer is formed using an oxide semiconductor. The pixel portion includes a pixel transistor in which a gate electrode layer, a source electrode layer, and a drain electrode layer are formed using an oxide conductor, and a semiconductor layer is formed using an oxide semiconductor. The pixel transistor is formed using a light-transmitting material, and thus, a display device with higher aperture ratio can be manufactured.

An array substrate includes a substrate, an active layer, and an amorphous silicon shielding layer. The substrate has a first surface and a second surface, which are opposing to each other. The active layer is over the first surface of the substrate. The amorphous silicon shielding layer includes amorphous silicon, and is between the active layer and the substrate, or alternatively is disposed over a side of the substrate proximal to the second surface of the substrate. An orthographic projection of the amorphous silicon shielding layer on the first surface at least partially and preferably completely covers an orthographic projection of the active layer on the first surface such that the amorphous silicon shielding layer shields a light from shedding onto the active layer.

Provided is a display substrate. The display substrate includes including a base substrate having a first display region and a second display region; in the pixel circuit included in the pixels in the second display region, the conductive line connected to the metal layer is a transparent conductive line, and the transparent conductive line is disposed between the two existing insulating layers.

A driving backplane includes: a base; a first conductive layer disposed on the base, the first conductive layer including at least one first signal line; a first insulating layer disposed on a side of the first conductive layer away from the base; a second conductive layer disposed on a side of the first insulating layer away from the first conductive layer, the second conductive layer including at least one second signal line. Each first signal line and a second signal line constitute a signal line pair. In the signal line pair, extending directions of the first signal line and the second signal line are the same, an orthogonal projection of the first signal line on the base and an orthogonal projection of the second signal line on the base have a first overlapping region, and the second signal line is coupled to the first signal line.