A solar electricity generation system is provided for generating electrical current from an improved solar system. The solar electricity generation system may include semiconductor layers, a thermoelectric component, angular configuration, and a monitoring component. A bias current may be applied to amplify the electrical power generated by the semiconductor layers. A method for generating electrical current from an improved solar system using the solar electricity generation system is also provided.

A solar electricity generation system is provided for generating electrical current from an improved solar system. The solar electricity generation system may include semiconductor layers, a thermoelectric component, angular configuration, and a monitoring component. A bias current may be applied to amplify the electrical power generated by the semiconductor layers. A method for generating electrical current from an improved solar system using the solar electricity generation system is also provided.

A method for manufacturing a CZTS based thin film having a dual band gap slope, comprising the steps of: forming a Cu.sub.2ZnSnS.sub.4 thin film layer; forming a Cu.sub.2ZnSn(S,Se).sub.4 thin film layer; and forming a Cu.sub.2ZnSnS.sub.4 thin film layer. A method for manufacturing a CZTS based solar cell having a dual band gap slope according to another aspect of the present invention comprises the steps of: forming a back contact; and forming a CZTS based thin film layer on the back contact by the method described above.

A method for manufacturing a CZTS based thin film having a dual band gap slope, comprising the steps of: forming a Cu.sub.2ZnSnS.sub.4 thin film layer; forming a Cu.sub.2ZnSn(S,Se).sub.4 thin film layer; and forming a Cu.sub.2ZnSnS.sub.4 thin film layer. A method for manufacturing a CZTS based solar cell having a dual band gap slope according to another aspect of the present invention comprises the steps of: forming a back contact; and forming a CZTS based thin film layer on the back contact by the method described above.

The present application discloses a multi-junction tandem laser photovoltaic cell, comprising a photovoltaic cell stack and a bottom electrode and a top electrode electrically connected to a bottom and a top of the photovoltaic cell stack, respectively, wherein the photovoltaic cell stack comprises stacked N AlGaAs PN-junction sub-cells, and adjacent sub-cells are connected in series via a tunneling junction, in which N≥2. The AlGaAs PN-junction sub-cells use an AlGaAs absorbing layer. The present application further discloses a method of making the multi-junction tandem laser photovoltaic cell. The present application uses AlGaAs as the absorbing layer of the multi-junction tandem cell to convert laser energy, which can effectively increase the open circuit voltage of the photovoltaic cell, thereby significantly improving the conversion efficiency of the photovoltaic cell.

The present disclosure provides a method of manufacturing a semiconductor device. Furthermore the present disclosure provides a photovoltaic device and a light emitting diode manufactured in accordance with the method. The method comprises the steps of forming a germanium layer using deposition techniques compatible with high-volume, low-cost manufacturing, such as magnetron sputtering, and exposing the germanium layer to laser light to reduce the amount of defects in the germanium layer. After the method is performed the germanium layer can be used as a virtual germanium substrate for the growth of III-V materials.

A solar cell according to embodiments of the inventive concept includes a back electrode on a substrate, a first light absorbing layer including gallium (Ga) and indium (In) on the back electrode, a first buffer layer on the first light absorbing layer, a first window layer on the first buffer layer, a second light absorbing layer including

Ga on the first window layer, a second buffer layer on the second light absorbing layer, and a second window layer on the second buffer layer, wherein a composition ratio of (Ga)/(Ga+In) of the first light absorbing layer is lower than that of the second light absorbing layer.

A solar cell according to embodiments of the inventive concept includes a back electrode on a substrate, a first light absorbing layer including gallium (Ga) and indium (In) on the back electrode, a first buffer layer on the first light absorbing layer, a first window layer on the first buffer layer, a second light absorbing layer including

Ga on the first window layer, a second buffer layer on the second light absorbing layer, and a second window layer on the second buffer layer, wherein a composition ratio of (Ga)/(Ga+In) of the first light absorbing layer is lower than that of the second light absorbing layer.

A monolithic multiple solar cell includes at least three partial cells, with a semiconductor mirror placed between two partial cells. The aim of the invention is to improve the radiation stability of said solar cell. For this purpose, the semiconductor mirror has a high degree of reflection in at least one part of a spectral absorption area of the partial cell which is arranged above the semiconductor mirror and a high degree of transmission within the spectral absorption range of the partial cell arranged below the semiconductor mirror.

A monolithic multiple solar cell includes at least three partial cells, with a semiconductor mirror placed between two partial cells. The aim of the invention is to improve the radiation stability of said solar cell. For this purpose, the semiconductor mirror has a high degree of reflection in at least one part of a spectral absorption area of the partial cell which is arranged above the semiconductor mirror and a high degree of transmission within the spectral absorption range of the partial cell arranged below the semiconductor mirror.