Methods and apparatus for an integrated circuit having with a frontside metal layer on the frontside of the substrate and a backside metal layer on the backside of the substrate. The backside metal layer is deposited onto the backside of the substrate and into the via such that a portion of the backside metal layer is connected to a portion of the frontside metal layer. A diffusion barrier layer is deposited on the backside metal layer located in the via.

Methods and apparatus for an integrated circuit having with a frontside metal layer on the frontside of the substrate and a backside metal layer on the backside of the substrate. The backside metal layer is deposited onto the backside of the substrate and into the via such that a portion of the backside metal layer is connected to a portion of the frontside metal layer. A diffusion barrier layer is deposited on the backside metal layer located in the via.

Semiconductor devices with underfill control features, and associated systems and methods. A representative system includes a substrate having a substrate surface and a cavity in the substrate surface, and a semiconductor device having a device surface facing toward the substrate surface. The semiconductor device further includes at least one circuit element electrically coupled to a conductive structure. The conductive structure is electrically connected to the substrate, and the semiconductor device further has a non-conductive material positioned adjacent the conductive structure and aligned with the cavity of the substrate. An underfill material is positioned between the substrate and the semiconductor device. In other embodiments, in addition to or in lieu of the con-conductive material, a first conductive structure is connected within the cavity, and a second conductive structure connected outside the cavity. The first conductive structure extends away from the device surface a greater distance than does the second conductive structure.

Semiconductor devices with underfill control features, and associated systems and methods. A representative system includes a substrate having a substrate surface and a cavity in the substrate surface, and a semiconductor device having a device surface facing toward the substrate surface. The semiconductor device further includes at least one circuit element electrically coupled to a conductive structure. The conductive structure is electrically connected to the substrate, and the semiconductor device further has a non-conductive material positioned adjacent the conductive structure and aligned with the cavity of the substrate. An underfill material is positioned between the substrate and the semiconductor device. In other embodiments, in addition to or in lieu of the con-conductive material, a first conductive structure is connected within the cavity, and a second conductive structure connected outside the cavity. The first conductive structure extends away from the device surface a greater distance than does the second conductive structure.

A package structure is disclosed, the package structure includes a substrate, a chip, a bonding layer, and a coating. A plurality of grooves are disposed on the substrate. Silver bonding materials are disposed in the grooves and on a surface of the substrate, to form the bonding layer. The chip is connected to the substrate by using the bonding layer. The grooves are symmetrically arranged along a first and a second axis that are perpendicular to each other, a vertical projection of the chip on the substrate is centrosymmetric about the first and the second axis, and the vertical projection of the chip on the substrate covers a partial area of an outer-ring groove which faces a periphery of the chip. The coating covers a surface that is of the bonding layer and not in contact with the substrate or the chip, used to prevent migration of silver ions.

Embodiments described herein include electronic packages and methods of forming such packages. An electronic package includes a package substrate, first conductive pads formed over the package substrate, where the first conductive pads have a first surface area, and second conductive pads over the package substrate, where the second conductive pads have a second surface area greater than the first surface area. The electronic package also includes a solder resist layer over the first and second conductive pads, and a plurality of solder resist openings that expose one of the first or second conductive pads. The solder resist openings of the electronic package may include conductive material that is substantially coplanar with a top surface of the solder resist layer. The electronic package further includes solder bumps over the conductive material in the solder resist openings, where the solder bumps have a low bump thickness variation (BTV).

The present disclosure is directed to a die having a metallized sidewall and methods of manufacturing the same. A contiguous metal layer is applied to each edge of a backside of a wafer. The wafer is cut at a base of a plurality of channels formed in the backside to create individual die each having a flange that is part of a sidewall of the die and includes a portion that is covered by the metal layer. When an individual die is coupled to a die pad, a semiconductive glue bonds the metal layer on the sidewall and a backside of the die to the die pad, which decreases the risk of delamination along the sides of the die. The flange also prevents the glue from contacting the active side of the die by acting as a barrier against adhesive creep of the glue up the sidewall of the die.

A semiconductor device includes a wiring board and a chip-shaped semiconductor element flip-chip mounted on the wiring board, in which a plurality of solder bumps and a plurality of protrusions including an insulating material are provided on a surface of the chip-shaped semiconductor element on a side facing the wiring board, and the chip-shaped semiconductor element is arranged so as to face the wiring board via an underfilling material in a state in which the underfilling material having a characteristic that viscosity decreases with an increase in temperature is applied to the wiring board and then subjected to reflow treatment to be flip-chip mounted on the wiring board.

Embodiments described herein include electronic packages and methods of forming such packages. An electronic package includes a package substrate, first conductive pads formed over the package substrate, where the first conductive pads have a first surface area, and second conductive pads over the package substrate, where the second conductive pads have a second surface area greater than the first surface area. The electronic package also includes a solder resist layer over the first and second conductive pads, and a plurality of solder resist openings that expose one of the first or second conductive pads. The solder resist openings of the electronic package may include conductive material that is substantially coplanar with a top surface of the solder resist layer. The electronic package further includes solder bumps over the conductive material in the solder resist openings, where the solder bumps have a low bump thickness variation (BTV).

A semiconductor device including a substrate, a semiconductor package, a thermal conductive bonding layer, and a lid is provided. The semiconductor package is disposed on the substrate. The thermal conductive bonding layer is disposed on the semiconductor package. The lid is attached to the thermal conductive bonding layer and covers the semiconductor package to prevent coolant from contacting the semiconductor package.