A package comprising at least one electronic chip, a first heat removal body on which the at least one electronic chip is mounted by a first interconnection, a second heat removal body mounted on or above the at least one electronic chip by a second interconnection, and an encapsulant encapsulating at least part of the at least one electronic chip, part of the first heat removal body and part of the second heat removal body, wherein the first interconnection is configured to have another melting temperature than the second interconnection.

An electronic device can include a plurality of pad electrodes provided at at least one side of a substrate, at least one circuit film configured to have a plurality of connection electrodes provided at an insulating film to correspond to the plurality of pad electrodes, a plurality of solders to conductively connect the plurality of connection electrodes to the plurality of pad electrodes exposed from the circuit film one-to-one, and an insulating adhesive to fill spaces between the plurality of pad electrodes and the plurality of connection electrodes. Also, each of the plurality of solders has an edge horizontally protruding from the insulating film.

The invention relates to a power module (1) comprising a substrate (2). an electrically conductive intermediate layer (3) which is arranged on the substrate (2) and which has a joining region (4) produced by means of sintering, and at least one power component (5) which is arranged on the intermediate layer (3) and the sintered joining region (4) and is connected thereto (in particular at the load connection of the power component (5)) and which has at least one connection point (6) (e.g. a control connection) connected to the intermediate layer (3), wherein the intermediate layer (3) has. in the region of the associated connection point (6). a solder region (7) produced by means of a solder preform and spaced and/or electrically insulated from the sintered joining region (4). The large active surface, which is subjected to high thermomechanical stress in the service life test. can therefore be connected via the sintered joining region (4), which ensures an especially long-lasting, reliable and resilient mechanical connection between the associated power component (5) and the substrate (2). At the associated connection point (6), e.g. the gate of a transistor, the thermomechanical stress is usually much less, which is why there in the intermediate layer (3) a solder preform can be used for producing the connection between the associated power component (5) and the substrate (2), such solder preforms being relatively cost-effectively obtainable. Furthermore. an electrical device (10) has at least one such power module (1). The joining region (4) produced by means of sintering can be formed by means of a sinter preform or by means of 3D printing. by means of a coating method or by means of screen printing/stencil printing. In the method for producing the power module (1). the intermediate layer (3) can be heated to the melting temperature of the solder if the melting temperature of the solder is higher than the sintering temperature or to the sintering temperature if the sintering temperature is higher than the melting temperature of the solder, and the layer thickness (9) of the sintering material for the joining region (4) produced by means of sintering can be larger or smaller than the layer thickness (9) of the solder for the associated solder region (7) if the sintering temperature is correspondingly lower or higher than the melting temperature of the solder. Alternatively. the melting temperature of the solder can be substantially t

The invention relates to a power module (1) comprising a substrate (2). an electrically conductive intermediate layer (3) which is arranged on the substrate (2) and which has a joining region (4) produced by means of sintering, and at least one power component (5) which is arranged on the intermediate layer (3) and the sintered joining region (4) and is connected thereto (in particular at the load connection of the power component (5)) and which has at least one connection point (6) (e.g. a control connection) connected to the intermediate layer (3), wherein the intermediate layer (3) has. in the region of the associated connection point (6). a solder region (7) produced by means of a solder preform and spaced and/or electrically insulated from the sintered joining region (4). The large active surface, which is subjected to high thermomechanical stress in the service life test. can therefore be connected via the sintered joining region (4), which ensures an especially long-lasting, reliable and resilient mechanical connection between the associated power component (5) and the substrate (2). At the associated connection point (6), e.g. the gate of a transistor, the thermomechanical stress is usually much less, which is why there in the intermediate layer (3) a solder preform can be used for producing the connection between the associated power component (5) and the substrate (2), such solder preforms being relatively cost-effectively obtainable. Furthermore. an electrical device (10) has at least one such power module (1). The joining region (4) produced by means of sintering can be formed by means of a sinter preform or by means of 3D printing. by means of a coating method or by means of screen printing/stencil printing. In the method for producing the power module (1). the intermediate layer (3) can be heated to the melting temperature of the solder if the melting temperature of the solder is higher than the sintering temperature or to the sintering temperature if the sintering temperature is higher than the melting temperature of the solder, and the layer thickness (9) of the sintering material for the joining region (4) produced by means of sintering can be larger or smaller than the layer thickness (9) of the solder for the associated solder region (7) if the sintering temperature is correspondingly lower or higher than the melting temperature of the solder. Alternatively. the melting temperature of the solder can be substantially t

A printed substrate having a first surface to which an electronic component is to be fixed through an underfill material includes a groove that is recessed from the first surface. The first surface includes a pair of lands that is to be electrically connected to the electronic component. The groove extends in a first direction in which the pair of lands extends and is located in a facing region of the first surface in which the first surface is to face the electronic component. An electronic device includes the printed substrate, the electronic component fixed to the first surface and the underfill material disposed between the first surface and the electronic component.

A package comprising at least one electronic chip, a first heat removal body on which the at least one electronic chip is mounted by a first interconnection, a second heat removal body mounted on or above the at least one electronic chip by a second interconnection, and an encapsulant encapsulating at least part of the at least one electronic chip, part of the first heat removal body and part of the second heat removal body, wherein the first interconnection is configured to have another melting temperature than the second interconnection.

The invention relates to a positioning device for positioning a substrate, in particular a wafer, comprising: a process chamber; a base body; a carrier element which comprises a support for supporting the substrate, the carrier element being arranged above the base body and formed movable in terms of distance from the base body; and a holder for an additional substrate, in particular an additional wafer or a mask, the holder being arranged opposite the carrier element; wherein there is, between the base body and the carrier element, a sealed-off cavity to which a pressure, in particular a negative pressure, can be applied so as to prevent undesired movement of the carrier element as a result of the action of an external force.

The invention relates to a positioning device for positioning a substrate, in particular a wafer, comprising: a process chamber; a base body; a carrier element which comprises a support for supporting the substrate, the carrier element being arranged above the base body and formed movable in terms of distance from the base body; and a holder for an additional substrate, in particular an additional wafer or a mask, the holder being arranged opposite the carrier element; wherein there is, between the base body and the carrier element, a sealed-off cavity to which a pressure, in particular a negative pressure, can be applied so as to prevent undesired movement of the carrier element as a result of the action of an external force.

Various embodiments of the disclosure disclose a method for manufacturing a micro Light Emitting Diode (LED) display. The disclosed manufacturing method may include coating a face of a substrate including a circuit portion with a first thickness of a polymer adhesive solution containing a plurality of metal particles, attaching an array of micro LED chips on the polymer adhesive solution, physically connecting a connection pad for each of the array of micro LED chips to the metal particles through heating and pressing the attached plurality of micro LED chips to descend through the polymer adhesive solution, and chemically bonding the metal particles to the connection pad and the circuit portion through heating and pressing so that the micro LED chips are electrically connected to the circuit portion. Various other embodiments are also possible.

Disclosed is a method for bonding with a silver paste, the method including: coating a silver paste on a semiconductor device or a substrate, the silver paste containing silver and indium; disposing the semiconductor on the substrate; and heating the silver paste to form a bonding layer, wherein the semiconductor device and the substrate are bonded to each other through the bonding layer, and wherein the indium is contained in the silver paste at 40 mole % or less.