A thin film capacitor includes a capacitance portion in which a plurality of electrode layers and dielectric layers are alternately laminated, a cover layer, an insulating layer, a via hole in which one electrode layer different from an uppermost electrode layer among the plurality of electrode layers is exposed at a bottom surface thereof, and an opening which is provided inside the via hole and in which the one electrode layer is exposed at a bottom surface thereof, and in which the cover layer and the insulating layer are exposed at a side surface. The opening includes a first opening portion which passes through the insulating layer and a second opening portion which is provided below the first opening portion and passes through the cover layer, and when an inner diameter of the first opening portion is D1 and an inner diameter of the second opening portion is D2, D1>D2.

A thin film high polymer laminated capacitor includes: a laminated chip including dielectric layers, and internal electrode layers including first metal layers including a first metal vapor-deposited on the dielectric layers, and second metal layers including a second metal vapor-deposited on the first metal layers. The dielectric layers and the internal electrode layers being laminated and bonded alternately, and external electrodes formed on one end and the other end of the laminated chip. The laminated chip having a first region having the first metal layers formed on the dielectric layers, which are laminated alternately, and edge regions having the second metal layers formed on layers connected to the one end and layers connected to the other end in the first metal layers, which are laminated alternately, the first region having a capacitor function region, and the edge region having a heavy edge.

A metalized film includes a dielectric film having a strip-shape, and a metal vapor-deposited electrode. An insulation margin is provided on a first end portion located at one end in a width direction of the dielectric film. A plurality of first slits each extending in a longitudinal direction of the dielectric film and a plurality of fuses are provided close to a second end portion located at an other end in the width direction. The metal vapor-deposited electrode includes a plurality of divided electrodes separated by a corresponding one of a plurality of second slits. Each of the plurality of second slits extends from the insulation margin to a corresponding one of the plurality of first slits. When the metalized film is cut along a cutting line extending in the width direction, at least two divided electrodes among the plurality of divided electrodes are respectively cut at the cutting line.

A film capacitor includes a main body portion including a dielectric film and a metal film; and external electrodes, and the external electrodes are disposed at a pair of main body ends in a first direction of the main body portion, respectively. The metal film includes a first portion connected to one of the external electrodes which is disposed at one of the main body ends, a second portion disposed at the other main body end, and a third portion disposed between the first portion and the second portion in the first direction, and a film thickness of the third portion is smaller than a film thickness of the second portion.

A film for a capacitor having a plurality of layers, the film for capacitors satisfying the following relational expression (1): Cmo/Cmu1.1 wherein Cmu is an oxygen gas permeability coefficient of the film for the capacitor, and Cmo is an oxygen gas permeability coefficient of an equivalent film that would be obtained if the film for the capacitor were to be formed as a uniform single layer, and having a thickness of 1 to 35 m.

Provided is a thin film capacitor comprising a capacitance portion in which at least one dielectric layer is sandwiched between a pair of electrode layers included in a plurality of electrode layers, wherein the capacitance portion has an opening which extends in a lamination direction in which the plurality of electrode layers and the dielectric layer are laminated and through which one electrode layer of the plurality of electrode layers is exposed, the one electrode layer has an exposed portion exposed at a bottom surface of the opening, the exposed portion is in contact with a wiring layer connecting the one electrode layer and an electrode terminal, and a thickness of the exposed portion of the one electrode layer is smaller than a thickness of other portions of the one electrode layer and is 50% or more of the thickness of the other portions of the one electrode layer.

An apparatus, system, and method for in-situ three-dimensional (3D) thin-film capacitor (TFC) are provided. A 3D TFC can include a glass core, a through glass via (TGV) in the glass core including first conductive material, the first conductive material forming a first electrode of the 3D MIM capacitor, a second conductive material acting as a second electrode of the 3D MIM capacitor, and a dielectric material in contact with the first and second conductive materials, the dielectric material extending vertically and horizontally and physically separating the first and second conductive materials.

A thin film high polymer laminated capacitor includes: a laminated chip including dielectric layers, and internal electrode layers including first metal layers including a first metal vapor-deposited on the dielectric layers, and second metal layers including a second metal vapor-deposited on the first metal layers. The dielectric layers and the internal electrode layers are laminated and bonded alternately, and external electrodes are formed on one end and the other end of the laminated chip. The laminated chip includes a first region having the first metal layers formed on the dielectric layers, which are laminated alternately, and edge regions having the second metal layers formed on layers connected to the one end and layers connected to the other end in the first metal layers, which are laminated alternately, the first region having a capacitor function region, and the edge region having a heavy edge.

A thin film capacitor includes a capacitance portion in which a plurality of electrode layers and dielectric layers are alternately laminated, a cover layer, an insulating layer, a via hole in which one electrode layer different from an uppermost electrode layer among the plurality of electrode layers is exposed at a bottom surface thereof, and an opening which is provided inside the via hole and in which the one electrode layer is exposed at a bottom surface thereof, and in which the cover layer and the insulating layer are exposed at a side surface. The opening includes a first opening portion which passes through the insulating layer and a second opening portion which is provided below the first opening portion and passes through the cover layer, and when an inner diameter of the first opening portion is D1 and an inner diameter of the second opening portion is D2, D1>D2.

Provided is a manufacturing method of a thin film capacitor comprising a capacitance portion in which at least one dielectric layer is sandwiched between a pair of electrode layers included in a plurality of electrode layers, the manufacturing method including a lamination process of alternately laminating the plurality of electrode layers and a dielectric film and forming a laminated body which will be the capacitance portion, a first etching process of forming an opening extending in a laminating direction with respect to the laminated body and exposing the dielectric film laminated directly on one of the plurality of electrode layers on a bottom surface of the opening, and a second etching process of exposing the one electrode layer at the bottom surface of the opening. In the second etching process, an etching rate of the one electrode layer is lower than an etching rate of the dielectric film.