The impurity concentration in the oxide semiconductor film is reduced, and a highly reliability can be obtained.

The present disclosure relates to an array substrate and a method for manufacturing the array substrate. The array substrate includes a substrate having a display region and a peripheral region surrounding the display region, the display region including sub-pixels arranged in an array, and a plurality of thin film transistors located on the substrate, including a plurality of first thin film transistors located within the peripheral region and a second thin film transistor located within each sub-pixel of the display region, wherein there is a first distance in a row and/or column direction between first active layers of the first thin film transistors and second active layers of nearest neighbor second thin film transistors, and there is a second distance in a row and/or column direction between adjacent second active layers, wherein the first distance is substantially equal to the second distance.

A thin film transistor substrate and a display device comprising the same are provided, in which the thin film transistor substrate comprises a first thin film transistor and a second thin film transistor on a base substrate, wherein the first thin film transistor includes a first active layer on the base substrate, and a first gate electrode spaced apart from the first active layer, the second thin film transistor includes a second active layer on the base substrate, a second gate electrode spaced apart from the second active layer, and an auxiliary gate electrode between the second active layer and the second gate electrode, the first active layer and the second active layer are integrally formed and connected to each other, the auxiliary gate electrode is integrally formed with the first gate electrode and spaced apart from the second active layer and the second gate electrode, and the second gate electrode overlaps at least a portion of the auxiliary gate electrode.

An electronic device comprises a panel, a driving circuit configured to drive the panel, and a transistor disposed in the panel. The transistor includes a first insulation film on a substrate, an active layer disposed on the first insulation film, a second insulation film disposed on the active layer and the first insulation film to cover the active layer, the second insulation film having a thickness smaller than a thickness of the first insulation film, a source electrode disposed on the second insulation film and spaced apart from the active layer by the second insulation film, the source electrode overlapping an end of the active layer, and a drain electrode disposed on the second insulation film and spaced apart from the active layer by the second insulation film, the drain electrode overlapping another end of the active layer.

An imaging device having a three-dimensional integration structure is provided. A first structure including a transistor including silicon in an active layer or an active region and a second structure including an oxide semiconductor in an active layer are fabricated. After that, the first and second structures are bonded to each other so that metal layers included in the first and second structures are bonded to each other; thus, an imaging device having a three-dimensional integration structure is formed.

A thin-film transistor, a display device including a thin-film transistor, and a method of manufacturing a thin-film transistor are provided. A thin-film transistor includes: a base substrate, a semiconductor layer on the base substrate, the semiconductor layer including: a first oxide semiconductor layer, and a second oxide semiconductor layer on the first oxide semiconductor layer, the second oxide semiconductor layer having a Hall mobility smaller than a Hall mobility of the first oxide semiconductor layer, and a gate electrode spaced apart from the semiconductor layer and partially overlapping the semiconductor layer, wherein a concentration of gallium (Ga) in the second oxide semiconductor layer is higher than a concentration of gallium (Ga) in the first oxide semiconductor layer.

A display panel and a manufacturing method are provided. The present disclosure can reduce process steps of the display panel by disposing a first source electrode and a first drain electrode of a low temperature polysilicon thin film transistor and a second source electrode and a second drain electrode of an oxide thin film transistor in a same layer. Therefore, stability of the oxide thin film transistor can be improved, a channel length of the oxide thin film transistor can be shortened correspondingly, resolution of the display panel can be improved, and a thickness of the display panel can be reduced.

A thin-film transistor, a display device including a thin-film transistor, and a method of manufacturing a thin-film transistor are provided. A thin-film transistor includes: a base substrate, a semiconductor layer on the base substrate, the semiconductor layer including: a first oxide semiconductor layer, and a second oxide semiconductor layer on the first oxide semiconductor layer, the second oxide semiconductor layer having a Hall mobility smaller than a Hall mobility of the first oxide semiconductor layer, and a gate electrode spaced apart from the semiconductor layer and partially overlapping the semiconductor layer, wherein a concentration of gallium (Ga) in the second oxide semiconductor layer is higher than a concentration of gallium (Ga) in the first oxide semiconductor layer.

An active matrix substrate includes a first TFT and a second TFT, each of TFTs includes an oxide semiconductor layer and a gate electrode arranged on a part of the oxide semiconductor layer with a gate insulating layer therebetween, in which in the first TFT, the oxide semiconductor layer, in a first region covered with the gate electrode with the gate insulating layer interposed between the oxide semiconductor layer and the gate electrode, has a layered structure including a lower oxide semiconductor film and an upper oxide semiconductor film throughout and a mobility of the upper oxide semiconductor film is higher than a mobility of the lower oxide semiconductor film, and in the second TFT, in at least a part of a first region of the oxide semiconductor layer, of the lower oxide semiconductor film and the upper oxide semiconductor film, one oxide semiconductor film is provided, and another oxide semiconductor film is not provided.

According to one embodiment, a semiconductor device includes a first insulating film, a first semiconductor layer formed of polycrystalline silicon, a second semiconductor layer formed of an oxide semiconductor, a second insulating film, a first gate electrode, a second gate electrode, a third insulating film formed of silicon nitride, and a protection layer. The protection layer is located between the second insulating film and the third insulating film, is opposed to the second semiconductor layer, and is formed of either an aluminum oxide or fluorinated silicon nitride.