An active matrix substrate includes a first TFT and a second TFT, each of TFTs includes an oxide semiconductor layer and a gate electrode arranged on a part of the oxide semiconductor layer with a gate insulating layer therebetween, in which in the first TFT, the oxide semiconductor layer, in a first region covered with the gate electrode with the gate insulating layer interposed between the oxide semiconductor layer and the gate electrode, has a layered structure including a lower oxide semiconductor film and an upper oxide semiconductor film throughout and a mobility of the upper oxide semiconductor film is higher than a mobility of the lower oxide semiconductor film, and in the second TFT, in at least a part of a first region of the oxide semiconductor layer, of the lower oxide semiconductor film and the upper oxide semiconductor film, one oxide semiconductor film is provided, and another oxide semiconductor film is not provided.

According to one embodiment, a semiconductor device includes a first insulating film, a first semiconductor layer formed of polycrystalline silicon, a second semiconductor layer formed of an oxide semiconductor, a second insulating film, a first gate electrode, a second gate electrode, a third insulating film formed of silicon nitride, and a protection layer. The protection layer is located between the second insulating film and the third insulating film, is opposed to the second semiconductor layer, and is formed of either an aluminum oxide or fluorinated silicon nitride.

A semiconductor device includes a substrate, a first thin-film transistor, and a second thin-film transistor. The first and second thin-film transistors are disposed on the substrate. The first thin-film transistor includes stacked first and second metal oxide layers. An oxygen concentration of the first metal oxide layer is less than an oxygen concentration of the second metal oxide layer, and a thickness of the second metal oxide layer is less than a thickness of the first metal oxide layer. A two-dimensional electron gas is located at an interface between the first and second metal oxide layers. The second thin-film transistor is electrically connected to the first thin-film transistor. The second thin-film transistor includes a third metal oxide layer. The second and third metal oxide layers belong to a same patterned layer.

An organic light emitting diode display includes a substrate including a display area and a non-display area adjacent the display area, a plurality of organic light emitting diodes at the display area of the substrate, a plurality of thin film transistors at the display area of the substrate, each of the plurality of thin film transistors being connected to a corresponding one of the plurality of organic light emitting diodes, and a first insulating layer covering an active layer of the plurality of thin film transistors, the first insulating layer having a greater number of contact holes at an outer region of the display area than at a central area of the display area.

A semiconductor device comprising a first transistor, a second insulating film, a conductive film, and a capacitor is provided. The first transistor comprises a first oxide semiconductor film, a gate insulating film over the first oxide semiconductor film, and a gate electrode over the gate insulating film. The second insulating film is provided over the gate electrode. The conductive film is electrically connected to the first oxide semiconductor film. The capacitor comprises a second oxide semiconductor film, the second insulating film over the second oxide semiconductor film, and the conductive film over the second insulating film. The first oxide semiconductor film comprises a first region and a second region. Each of a carrier density of the second region and a carrier density of the second oxide semiconductor film is higher than a carrier density of the first region.

A thin film transistor including a substrate; a semiconductor layer disposed over the substrate; a gate insulting film disposed over the semiconductor layer; and a gate electrode. The semiconductor layer includes a channel region, a source region, and a drain region. The gate insulating film includes a first region and a second region. The second region borders the first region. The gate electrode is disposed over the first region. A step shape is formed where the second region meets the first region.

There is provided a display apparatus including: a first semiconductor substrate (100) provided with a drive circuit unit (40) including a pixel transistor group including a plurality of pixel transistors (400) that drives a light emitting unit (20); and a second semiconductor substrate (200) provided with the light emitting unit and a peripheral circuit unit (30) including a plurality of peripheral circuit transistors (300) that supplies a signal voltage to the drive circuit unit, the second semiconductor substrate being stacked on the first semiconductor substrate and bonded to the first semiconductor substrate, wherein a film thickness of a gate oxide film (404) of each of the plurality of pixel transistors is larger than a film thickness of a gate oxide film (304) of each of the plurality of peripheral circuit transistors.

The present application discloses a pixel structure and a display device. The pixel structure includes a scan line having a branch structure; and a semiconductor pattern intersecting with the scan line and the branch structure. The semiconductor pattern includes: a first channel region disposed below the scan line; a second channel region disposed below the branch structure; and doping regions respectively disposed at two sides of the first channel region and at two sides of the second channel region. Wherein, the width of the second channel region is less than the width of the first channel region. The pixel structure may improve the display performance of the display screen.

Integrated circuits and methods for fabricating integrated circuits are provided. An exemplary method for fabricating an integrated circuit includes providing a substrate including a semiconductor layer over an insulator layer. The method includes selectively replacing portions of the semiconductor layer with insulator material to define an isolated semiconductor layer region. Further, the method includes selectively forming a relaxed layer on the isolated semiconductor layer region. Also, the method includes selectively forming a strained layer on the relaxed layer. The method forms a device over the strained layer.

A semiconductor device capable of retaining data for a long time is provided. A first transistor and a second transistor having different electrical characteristics from those of the first transistor are provided over the same layer without an increase in the number of manufacturing steps.