The disclosure discloses an array substrate, a display panel, and a display device. A first power signal line is configured to be formed by electrically connecting a first signal line located in a first source-drain metal layer and a second signal line located in a second source-drain metal layer through a via hole, which is equivalent to that the first power signal line is composed of the first signal line and the second signal line connected in parallel, and the equivalent resistance of the parallel-connected first signal line and second signal line included in the first power signal line is smaller than the resistance of any of the signal lines. Thus, the resistance of the first power signal line may be effectively reduced, so that an IR drop of a display panel with an array substrate may be reduced, and the display uniformity of the display panel is improved.

A technique, comprising: forming in situ on a support substrate: a first metal layer; a light-absorbing layer after the first metal layer; a conductor pattern after the light-absorbing layer; and a semiconductor layer after the conductor pattern; patterning the semiconductor layer using a resist mask to form a semiconductor pattern defining one or more semiconductor channels of one or more semiconductor devices; and patterning the light-absorbing layer using the resist mask and the conductor pattern, so as to selectively retain the light-absorbing layer in regions that are occupied by at least one of the resist mask and the conductor pattern.

The present disclosure discloses a display panel which includes a substrate and plurality of insulating layers disposed on the substrate, and a plurality of metal routings, and includes a display region and a first non-display region at left and right sides of the display region, and a display, the plurality of metal routings being at the first non-display region and insulated from each other, and at least adjacent two of the metal routings being positioned on different layers of the insulating layers. An interval between adjacent metal routings on different insulating layers in a horizontal direction can be reduced through the above wiring manner, thereby reducing a space occupied by the first non-display region.

An array substrate has a display area and a bonding area located on a side of the display area. The array substrate includes a base, a plurality of first transistors, a plurality of conductive pins and a plurality of conductive electrodes. The plurality of first transistors are disposed on a side of the base and located in the display area; a first transistor includes a first gate, a first source and a first drain. The plurality of conductive pins are disposed on the side of the base and located in the bonding area, and are disposed in a same layer as the first gate. The plurality of conductive electrodes are each disposed on a respective one of surfaces of the plurality of conductive pins away from the base.

A display panel and a mobile terminal are provided. The display panel includes a base and a thin film transistor (TFT) layer that is disposed on the base and includes at least two TFTs arranged in parallel. According to the present disclosure, the TFT layer includes at least two TFTs arranged in parallel, thereby resolving the problem that a short circuit between a gate and a source and/or a short circuit between the gate and a drain in the TFT cannot be repaired.

A manufacturing method of an electronic device is provided by the present disclosure. The method includes: providing a substrate including a non-discarding portion and a discarding portion adjacent to the non-discarding portion; forming a first test wiring extending through the non-discarding portion and the discarding portion; cutting the substrate on a target line, wherein the target line is aligned with a boundary between the non-discarding portion and the discarding portion; performing a first conducting test on the first test wiring; and determining the substrate to be in an off-target cutting state when a result of the first conducting test is a short circuit state, or determining the substrate to be in an on-target cutting state when the result of the first conducting test is an open circuit state.

Disclosed is a display device that with low power consumption. The display device includes a first thin film transistor having a polycrystalline semiconductor layer in an active area and a second thin film transistor having an oxide semiconductor layer in the active area, wherein at least one opening disposed in a bending area has the same depth as one of a plurality of contact holes disposed in the active area, whereby the opening and the contact holes are formed through the same process, and the process is therefore simplified, and wherein a high-potential supply line and a low-potential supply line are disposed so as to be spaced apart from each other in the horizontal direction, whereas a reference line and the low-potential supply line are disposed so as to overlap each other, thereby preventing signal lines from being shorted.

An active matrix substrate includes a substrate, a first gate bus line, a second gate bus line, a third gate bus line, a first source bus line, a second source bus line, a first pixel region, a second pixel region, and a first source contact portion. When viewed from a normal direction of the substrate, a first opening portion is located between the second gate bus line and the third gate bus line, and a first distance D1 in a column direction between the second gate bus line and the first opening portion and a second distance D2 in the column direction between the third gate bus line and the first opening portion are both ⅕ or more of a second interval Dy2 in the column direction between the second gate bus line and the third gate bus line.

According to one embodiment, a display device includes first semiconductor layers crossing a first scanning line in a non-display area, the first semiconductor layers being a in number, second semiconductor layers crossing a second scanning line in the non-display area, the second semiconductor layers being b in number, and an insulating film disposed between the first and second semiconductor layers and the first and second scanning lines, wherein a and b are integers greater than or equal to 2, and a is different from b, and the first and second semiconductor layers are both entirely covered with the insulating film.

A TFT array substrate includes a substrate layer and a metal layer disposed on the substrate layer. The metal layer includes a metal layer bridging structure having a first metal layer and a bridging second metal layer. An insulating layer is disposed between the first metal layer and the bridging second metal layer. The first metal layer includes two segments of a first segment and a second segment of the first metal layer, which are disposed at intervals. The first segment and the second segment of the first metal layer are connected by the bridging second metal layer. The TFT array substrate has a bending region adopting a new metal layer routing structure, and routing of the first metal layer in the bending region is prevented from passing through two holes of a filling layer (OILD), thereby effectively reducing the risk of subsequent breakage due to over-etching.