A display module includes a glass substrate having a TFT layer and a driver circuit disposed on surfaces thereof, LEDs electrically connected to the TFT layer; first connection pads formed in an edge region of the front surface; second connection pads formed in an edge region of the rear surface; and side wirings in recessed grooves arranged at intervals on a side of the glass substrate so that the side wirings are located at concave positions from the side of the glass substrate, the side wirings electrically connecting the first and second connection pads, wherein the first and second connection pads are spaced a predetermined distance inward from the side of the glass substrate, and the recessed grooves are arranged so that opposite ends of the recessed grooves are located at positions corresponding to the first and second connection pads, respectively.

The present invention relates to the field of display technology, and discloses a method for preparing an array substrate, a display panel and an evaporation apparatus. A method for preparing an array substrate comprises: fixing a base substrate to an evaporation stage; attaching a shielding sheet to the base substrate to cover at least a preset area of the base substrate; arranging and aligning an open mask in association with the base substrate; and evaporating to form a evaporation material layer on the base substrate, to which the shielding sheet is attached, with the open mask.

A peeling method at low cost with high mass productivity is provided. A silicon layer having a function of releasing hydrogen by irradiation with light is formed over a formation substrate, a first layer is formed using a photosensitive material over the silicon layer, an opening is formed in a portion of the first layer that overlaps with the silicon layer by a photolithography method and the first layer is heated to form a resin layer having an opening, a transistor including an oxide semiconductor in a channel formation region is formed over the resin layer, a conductive layer is formed to overlap with the opening of the resin layer and the silicon layer, the silicon layer is irradiated with light using a laser, and the transistor and the formation substrate are separated from each other.

A condensation assembly includes a condensation plate and a plurality of sumps. The condensation plate includes a plate body and a plurality of protrusions on a surface of the plate body, and the plurality of protrusions are spaced apart. The plurality of sumps are disposed at a side of the plurality of protrusions away from the plate body. Each sump of the plurality of sumps is disposed opposite to at least one of the plurality of protrusions, and has an opening facing the at least one protrusion disposed opposite to the sump. There is a gap between the plurality of sumps and the condensation plate.

The disclosure relates to the technical field of display devices and discloses a display substrate, a splicing screen and a manufacturing method thereof. The display substrate includes a flexible substrate; a plurality of signal lines located at one side of the flexible substrate; a plurality of plating electrodes located at one side of the signal lines toward the flexible substrate and electrically connected to the signal lines in one-to-one correspondence; a plurality of first through holes in one-to-one correspondence to the plating electrodes and penetrating the flexible substrate and exposing the plating electrodes, the first through roles being filled with a conductive material inside; and a plurality of binding electrodes located at one side of the flexible substrate away from the signal lines and in one-to-one correspondence to the first through holes, the binding electrodes being electrically connected to corresponding plating electrode through conductive material in corresponding first through hole.

A display panel includes a base layer having a first region and a bent second region. An inorganic layer is disposed on the base layer. A lower groove is formed within the inorganic layer and overlaps the second region. A first thin-film transistor is disposed on the inorganic layer and includes a silicon semiconductor pattern overlapping the first region. A second thin-film transistor is disposed on the inorganic layer and includes an oxide semiconductor pattern overlapping the first region. Insulating layers overlap the first and second regions. An upper groove is formed within the insulating layers. A signal line electrically connects the second thin-film transistor. An organic layer overlaps the first and second regions and is disposed in the lower and upper grooves. A luminescent device is disposed on the organic layer and overlaps the first region.

A stretchable electronic device is provided. The stretchable electronic device includes a stretchable elastomer polymer base substrate; a plurality of electronic devices; and a plurality of recesses partially extending into the stretchable elastomer polymer base substrate. The stretchable elastomer polymer base substrate includes a plurality of stiffened portions respectively in a plurality of stiffened regions spaced apart by one or more elastomeric portions in one or more elastomeric regions. A respective electronic device of the plurality of electronic devices is at least partially in a respective recess of the plurality of recesses, and is in a respective stiffened region of the plurality of stiffened regions. The respective electronic device in the respective recess is stacked on a respective stiffened portion of the plurality of stiffened portions.

An active matrix substrate includes a thin film transistor that includes a gate electrode, a first inorganic insulating film that covers the gate electrode, a second inorganic insulating film that is disposed on the first inorganic insulating film and that has an opening overlapping the gate electrode, a source electrode and a drain electrode disposed on the second inorganic insulating film, and a semiconductor layer that overlaps the gate electrode in an opening of the first inorganic insulating film and that covers the source electrode and the drain electrode. Regarding a surface of the first inorganic insulating film in a first region overlapping the opening of the first inorganic insulating film and a surface in a second region other than the first region, the surfaces being arranged nearer to the second inorganic insulating film, the surface in the first region is lower than the surface in the second region.

A method and structure for receiving a micro device on a receiving substrate are disclosed. A micro device such as a micro LED device is punched-through a passivation layer covering a conductive layer on the receiving substrate, and the passivation layer is hardened. In an embodiment the micro LED device is punched-through a B-staged thermoset material. In an embodiment the micro LED device is punched-through a thermoplastic material.

A glass substrate has a compaction of 0.1 to 100 ppm. An absolute value |Δα.sub.50/100| of a difference between an average coefficient of thermal expansion α.sub.50/100 of the glass substrate and an average coefficient of thermal expansion of single-crystal silicon at 50° C. to 100° C., an absolute value |Δα.sub.100/200| of a difference between an average coefficient of thermal expansion α.sub.100/200 of the glass substrate and an average coefficient of thermal expansion of the single-crystal silicon at 100° C. to 200° C., and an absolute value |Δα.sub.200/300| of a difference between an average coefficient of thermal expansion α.sub.200/300 of the glass substrate and an average coefficient of thermal expansion of the single-crystal silicon at 200° C. to 300° C. are 0.16 ppm/° C. or less.