The present disclosure provides a display substrate, a manufacturing method thereof and a display apparatus, and relates to the field of display technology. The manufacturing method of a display substrate includes providing a base substrate, and forming pixels on the base substrate, wherein the forming pixels includes: forming a first auxiliary electrode on the base substrate; forming a first interlayer insulating layer on a side of the first auxiliary electrode away from the base substrate; sequentially forming a second conductive film and a first photoresist layer, exposing the first photoresist layer with a mask plate having regions of different light transmittances by controlling exposure time based on requirements on an operating frequency band of the pixels, to form a source electrode and a drain electrode of the thin film transistor and a second auxiliary electrode, forming a second interlayer insulating layer; and forming a pixel electrode.

A method of manufacturing the display apparatus includes: attaching a removable first film to one of an upper surface and a lower surface of a substrate, adjacent to a side surface of the substrate; hydrophilic-treating a first region of the side surface of the substrate, where the side surface includes the first region and a second region; providing an organic film pattern on the first region after the hydrophilic-treating; providing a metal layer on the first region and the second region after forming the organic film pattern; and forming a connection wire by removing the organic film pattern and portions of the metal layer on the first region.

A display apparatus includes a semiconductor layer arranged on a substrate and including a channel area and a source area and a drain area respectively arranged at both sides of the channel area, the semiconductor layer including an opening portion arranged to be adjacent to one of the source area and the drain area, an electrode overlapping in a plan view and electrically connected to one of the source area and the drain area, and an insulating pattern arranged between the semiconductor layer and the electrode, wherein a first edge of the electrode adjacent to the opening portion is spaced apart from the opening portion, and an edge portion of the insulating pattern adjacent to the opening portion is spaced apart from the opening portion.

A method of fabricating a metal mask includes receiving a metal planar substrate and patterning the metal planar substrate. The metal planar substrate includes a first surface and a second surface opposite to the first surface. The patterning the metal planar substrate includes forming strip-shaped structures, forming through holes, and forming a blind hole in a direction from the first surface to the second surface. The through holes extend to the first surface and the second surface. The through holes and the strip-shaped structures are alternately arranged. The blind hole extends across the through holes.

A method of manufacturing a display substrate, a display substrate and a display panel are provided. The method of manufacturing a display substrate includes: infiltrating an etching point of a film group with an etching solution, to form an infiltration groove at the etching point of a film group; and patterning a remaining part of the film group at the infiltration groove, to obtain a via hole penetrating the remaining part of the film group.

A display device includes: a substrate; a first conductive layer on the substrate and including a first pattern; a first insulating layer on the first conductive layer; a semiconductor layer on the first insulating layer and including an active pattern; a second insulating layer on the semiconductor layer; and a second conductive layer on the second insulating layer, wherein the second conductive layer includes a first electrode partially in contact with the active pattern, the first electrode is in contact with the first pattern through a first contact hole, the first contact hole penetrates the first insulating layer and includes a first hole defined by a sidewall of the first insulating layer, and a second hole defined by a sidewall of the active pattern and a sidewall of the second insulating layer, and a width of the second hole is greater than a width of the first hole.

The present disclosure relates to a thin-film transistor, a method for preparing the same, and a display substrate. The method for preparing the thin-film transistor includes the steps of forming a source electrode, a drain electrode, and an active layer, in which the step of forming the source electrode, the drain electrode, and the active layer includes: forming a first thin film from a first metal oxide material in an atmosphere of a first oxygen content; and forming a second thin film from a second metal oxide material in an atmosphere of a second oxygen content, in which the first thin film is configured to form the active layer, the second thin film is configured to form a source electrode and a drain electrode, and the second oxygen content is less than the first oxygen content.

An organic light-emitting diode (OLED) display panel and a method for manufacturing the same are provided. The OLED display panel at least includes a thin film transistor (TFT) array substrate, a passivation layer, a planarization layer, and planarization-compensating layer. The planarization layer has a first planarization part corresponding to a light-emitting area, and a second planarization part corresponding to a defining area and a part of the light-emitting area. Height of a surface of the planarization-compensating layer from the surface of the TFT array substrate and height of a surface of the second planarization part from the surface of the TFT array substrate are level.

The present disclosure provides a method for manufacturing an electronic device, and the method comprises providing a substrate and forming a pattern layer. The substrate has a step structure, and the step structure comprises a high-level surface and a low-level surface. The pattern layer is formed on the high-level surface and the low-level surface, wherein the pattern layer is made by at least two photolithography processes. The disclosure also provides an electronic device manufactured by the manufacturing method of the disclosed embodiment in the disclosure.

It is an object of the invention to provide a technique to manufacture a display device with high image quality and high reliability at low cost with high yield. The invention has spacers over a pixel electrode layer in a pixel region and over an insulating layer functioning as a partition which covers the periphery of the pixel electrode layer. When forming a light emitting material over a pixel electrode layer, a mask for selective formation is supported by the spacers, thereby preventing the mask from contacting the pixel electrode layer due to a twist and deflection thereof. Accordingly, such damage as a crack by the mask does not occur in the pixel electrode layer. Thus, the pixel electrode layer does not have a defect in shapes, thereby a display device which performs a high resolution display with high reliability can be manufactured.