A method of fabricating a display panel may include forming an oxide semiconductor pattern on a base layer including a first region and a second region, etching first, second, and third insulating layers to form a first groove that overlaps the second region, forming electrodes on the third insulating layer, forming a fourth insulating layer on the third insulating layer to cover the electrodes, thermally treating the fourth insulating layer, forming an organic layer to cover the fourth insulating layer, and forming an organic light emitting diode on the organic layer.

A display panel, an array substrate, and a manufacturing method thereof, wherein the array substrate includes a thin film transistor device, and an interface layer, a first transparent conductive layer, a passivation layer, and a second transparent conductive layer which are formed on the thin film transistor device in sequence. By replacing a planarization layer in the prior art with the interface layer, performing a gate re-etching process, and perforating the interface layer and the passivation layer to simultaneously form a deep via and a shallow via, a number of photomasks required to form the array substrate is reduced to 8. It effectively reduces costs of production materials and costs of photomasks.

An array substrate, a method for fabricating the same, and a display device are provided. The method includes: forming a passivation layer on an array substrate, wherein the array substrate includes a thin film transistor and a conductive pad, and the passivation layer covers the thin film transistor and the conductive pad; forming a full-surface carbon film on the passivation layer; and patterning the carbon film and the passivation layer to remove the passivation layer and the carbon film corresponding to the conductive pad by a patterning process to obtain the array substrate.

Provided are an array substrate and a manufacturing method thereof, the manufacturing method includes: forming a first active layer on a base substrate; forming a second active layer; forming a second gate on the second active layer; forming a first insulating layer covering the first active layer on the second gate; patterning the first insulating layer to form first via holes at both sides of the second gate to expose the second active layer; depositing a first metal layer in the first via holes and on the first insulating layer; patterning the first metal layer, removing a part of the first metal layer above the first active layer to expose the first insulating layer; etching the first insulating layer using the patterned first metal layer as a mask, forming second via holes above the first active layer to expose the first active layer; cleaning the exposed first active layer.

A display panel and a display device are provided. A retaining wall is disposed on a middle position of a driver circuit layer, the retaining wall can prevent an insulating film from overlapping a whole sealing layer in an insulating film coating process, which improves adhesion of the display panel and reliability against high temperature and high humidity, thereby improving quality of the display panel.

An array substrate includes a substrate, a first metal layer and an active layer disposed on the substrate, an interlayer insulating layer, and a second metal layer. The first metal layer forms at least one first trace, the interlayer insulating layer is disposed on the first metal layer and the active layer, the second metal layer is disposed on the interlayer insulating layer, the interlayer insulating layer is formed with a first contact hole, and the second metal layer is connected to the first trace through the first contact hole. The first metal layer includes a conductive layer and a first protective layer stacked in sequence.

A manufacturing method of an array substrate, an array substrate and a display device are disclosed. The manufacturing method of the array substrate includes: providing a base substrate (200); forming a semiconductor layer on the base substrate; depositing an etch stop layer material on the semiconductor layer; subjecting the etch stop layer material to a wet etching process to form an etch stop layer; subjecting the semiconductor layer to a dry etching process to form an active layer, wherein the active layer includes a first region and a second region surrounding the first region, an orthographic projection of the etch stop layer on the base substrate completely coincides with an orthographic projection of the first region of the active layer on the base substrate.

The present disclosure provides a display substrate, a method for preparing the same, and a display device including the display substrate. The method includes: forming a conductive layer; forming a first photoresist pattern and a second photoresist pattern on the conductive layer, in which the adhesion between the first photoresist pattern and the conductive layer is less than the adhesion between the second photoresist pattern and the conductive layer; and etching the conductive layer by using the first photoresist pattern and the second photoresist pattern as masks to form a first conductive pattern and a second conductive pattern, respectively, in which a line width difference between the first conductive pattern and the first photoresist pattern is greater than a line width difference between the second conductive pattern and the second photoresist pattern.

A display substrate, a manufacturing method thereof, a display panel, and a display device are provided. The method for manufacturing a display substrate includes: forming a thin film transistor on a base substrate; forming a planarization layer covering the thin film transistor; forming a metal mask layer on the planarization layer; patterning the metal mask layer to form an etching hole in the metal mask layer, the etching hole exposing a portion of the planarization layer; etching the portion of the planarization layer exposed by the etching hole to form a first via hole penetrating the planarization layer, and removing a remaining metal mask layer on the planarization layer.

A display device includes a driving transistor and an organic EL element. The driving transistor includes an oxide semiconductor layer; a first gate electrode that includes a region overlapping the oxide semiconductor layer; a first insulating layer between the first gate electrode and the oxide semiconductor layer; a second gate electrode that includes a region overlapping the oxide semiconductor layer and the first gate electrode; a second insulating layer between the second gate electrode and the oxide semiconductor layer; and a first and a second transparent conductive layer that are provided between the oxide semiconductor layer and the first insulating layer and each include a region contacting the oxide semiconductor layer. The organic EL element includes a first electrode; a second electrode; a light emitting layer between the first electrode and the second electrode; and an electron transfer layer between the light emitting layer and the first electrode.