A liquid crystal display device includes a TFT substrate having a first alignment film and an opposing substrate having a second alignment film with liquid crystals sandwiched therebetween. One of the first and second alignment films, comprises a first polyimide produced via polyamide acid ester containing cyclobutane as a precursor and a second polyimide produced via polyamide acid as a precursor. The polyamide acid has a higher polarity than that of the polyamide acid ester. The one of the first and second alignment films is responsive to photo-alignment. A first side of the one of the first and second alignment films is adjacent to the liquid crystals, and a second side thereof is closer to one of the TFT substrate and the counter substrate than the first side. The first side contains more of the first polyimide and less of the second polyimide than the second side.

A semiconductor device with high aperture ratio is provided. The semiconductor device includes a transistor and a capacitor having a pair of electrodes. An oxide semiconductor layer formed over the same insulating surface is used for a channel formation region of the transistor and one of the electrodes of the capacitor. The other electrode of the capacitor is a transparent conductive film. One electrode of the capacitor is electrically connected to a wiring formed over the insulating surface over which a source electrode or a drain electrode of the transistor is provided, and the other electrode of the capacitor is electrically connected to one of the source electrode and the drain electrode of the transistor.

Disclosed are an array substrate and a manufacturing method therefor, a display panel and a display apparatus. The array substrate comprises several pixel units located on a base substrate and arranged in an array, with each of the pixel units comprising a thin-film transistor, and the thin-film transistor comprising a polycrystalline silicon active layer, wherein a length extension direction of a channel of the thin-film transistor is parallel to a pre-set direction; and the pre-set direction is a scanning direction of an excimer laser beam used when forming the polycrystalline silicon active layer.

The present disclosure provides an array substrate and a manufacturing method thereof, a liquid crystal display panel, and a liquid crystal display apparatus, which can solve a problem that an independent backlight of the related liquid crystal display device is easy to cause light leakage, resulting in a thicker product. Both a light emitting structure and an array structure are disposed on the array substrate of the present disclosure, wherein a control device of the light emitting structure can control the light emitting source to emit light. That is, in the present disclosure, the light emitting structure is directly formed in the array substrate, which is equivalent to a built-in light emitting source, so that it is no longer necessary to adhere an external backlight, and no adhesive gap is generated to cause light leakage, and the thickness of the product can be reduced.

A method of manufacturing a display device, the method including providing a substrate, forming a first electrode, a second electrode spaced from the first electrode and in a same plane as the first electrode, a first alignment line connected to the first electrode, and a second alignment line connected to the second electrode on the substrate, self-aligning the plurality of light emitting elements by providing a solution containing a plurality of light emitting elements on the substrate, removing the first alignment line and the second alignment line from the substrate on which the plurality of light emitting elements are self-aligned, forming a first contact electrode electrically connecting one end of each light emitting element to the first electrode, and forming a second contact electrode electrically connecting an other end of each light emitting element to the second electrode.

A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formulation region of a TFT, thereby preventing grain boundaries rom lowering the mobility of the TFT greatly, from lowering ON current, and from increasing OFF current. Rectangular or stripe pattern depression and projection portions are formed on an insulating film. A semiconductor film is formed on the insulating film. The semiconductor film is irradiated with continuous wave laser light by running the laser light along the stripe pattern depression and projection portions of the insulating film or along the major or minor axis direction of the rectangle. Although continuous wave laser light is most preferred among laser light, it is also possible to use pulse oscillation laser light in irradiating the semiconductor film.

The present disclosure relates to a method and system for performing aging process on the transistor in the display panel. A method for performing aging process on a transistor in a display panel, comprising: obtaining an initial characteristic curve of the transistor; determining an initial cutoff voltage range of the transistor according to the obtained initial characteristic curve; determining a gate-source voltage and a drain-source voltage required by the transistor according to the initial cutoff voltage range, so as to increase an cutoff voltage range of the transistor; and performing aging process on the transistor according to the determined required gate-source voltage and drain-source voltage.

The present invention teaches a pixel unit including thin film transistors (TFTs) and pixel electrodes corresponding to the TFTs. The pixel electrodes are connected to the source electrodes of the TFTs. Each pixel electrode includes multiple arc-shaped electrode units arranged at intervals along an axial direction around a periphery of a corresponding TFT. The electrode units are electrically connected together. The present invention adopts arc-shaped pixels (similar to concentric circles) so that liquid crystal molecules are closer to being isotropic. Then, by having different vertical alignment (VA) TFT designs in the primary pixel region and secondary pixel region and utilizing the differences in W/L and capacitance, different voltage levels for primary pixel electrode and secondary pixel electrode are achieved. The color shift problem is improved and the viewing angle is enhanced.

An array substrate includes an electrostatic shielding layer disposed on a substrate, an isolating layer covering the electrostatic shielding layer, gate lines, data lines, and thin film transistors. The gate lines, the data lines, and the thin film transistors are disposed on the isolating layer. An orthographic projection of a pattern of the electrostatic shielding layer on the substrate covers an orthographic projection of at least one of a pattern of the gate lines, a pattern of the data lines, and a pattern of the thin film transistors on the substrate.

Disclosed are a source drive integrated circuit (IC), a method of manufacturing the same, and a display apparatus including the source drive IC. The source drive IC includes a core portion, a first channel portion disposed outside one side of the core portion, a second channel portion disposed outside the other side of the core portion, a first resistor string provided inward from the one side of the core portion to generate a plurality of gamma voltages, a first resistance corrector provided between the first resistor string and the first channel portion, and a first connection line extending from the first resistor string to each of the first channel portion and the second channel portion and transferring the plurality of gamma voltages to the first channel portion and the second channel portion. The first connection line extends to the first channel portion via the first resistance corrector.