an array substrate, a method of manufacturing the array substrate, and a display device are provided. The array substrate includes: a base substrate; a first thin film transistor and a second thin film transistor on the base substrate, wherein the first thin film transistor comprises a first active layer, the second thin film transistor comprises a second active layer, and the second active layer is on a side of the first active layer away from the base substrate; and an interlayer dielectric layer and a first buffer layer between the first active layer and the second active layer, wherein the interlayer dielectric layer is capable of supplying hydrogen and the first buffer layer is capable of blocking hydrogen.

An array substrate includes a pixel circuit and a light-emitting diode. The pixel circuit includes a driving transistor including a first active medium made of polysilicon, and a switching transistor including a second active medium made of polysilicon. The first active medium has a first grain size. The second active medium has a second grain size larger than the first grain size. The light-emitting diode is coupled to the pixel circuit.

A method for manufacturing a display panel, a display panel, and a display device are provided. The method includes: forming a plurality of gate lines and a common electrode line pattern on a base substrate; forming an insulating layer on the base substrate on which the plurality of gate lines and the common electrode line pattern are formed; forming a via hole on the insulating layer; and forming a metal conductive pattern on the base substrate on which the insulating layer is formed. The common electrode line and the common electrode connection block located on two sides of a gate line are electrically connected through a bridging structure in a conductive layer made of metal, which reduces the resistance of the bridging structure, so that the voltage uniformity throughout the common electrode line pattern which is bridged through the bridging pattern is high.

A thin-film transistor, a display device including a thin-film transistor, and a method of manufacturing a thin-film transistor are provided. A thin-film transistor includes: a semiconductor layer including: a first oxide semiconductor layer including gallium (Ga), a second oxide semiconductor layer, and a silicon semiconductor layer between the first oxide semiconductor layer and the second oxide semiconductor layer, and a gate electrode spaced apart from the semiconductor layer and partially overlapping at least a part of the semiconductor layer.

An array board includes input terminals, a first interlayer insulating film, a first planarization film, terminal lines, a second planarization film, and protective members. A first interlayer insulating film edge section and a first planarization film edge section are disposed between the input terminals and the display area. The terminal lines in a layer upper than the first planarization film and extending to cross the first interlayer insulating film edge section and the first planarization film edge section are connected to the input terminals. The second planarization film in a layer upper than the terminal lines includes a second planarization film edge section disposed closer to the input terminals relative to the first interlayer insulating edge section and the first planarization film edge section. The protective members in a layer upper than the second planarization film cover sections of the terminals lines not overlapping the second planarization film, respectively.

The present invention is notably directed to an electro-optical device. The latter comprises a layer structure with: a silicon substrate; a buried oxide layer over the silicon substrate; a tapered silicon waveguide core over the buried oxide layer, the silicon waveguide core cladded by a first cladding structure; a bonding layer over the first cladding structure; and a stack of III-V semiconductor gain materials on the bonding layer, the stack of III-V semiconductor gain materials cladded by a second cladding structure. The layer structure is configured to optically couple radiation between the stack of III-V semiconductor gain materials and the tapered silicon waveguide core. The first cladding structure comprises a material having: a refractive index that is larger than 1.54 for said radiation; and a bandgap, which, in energy units, is larger than an average energy of said radiation.

An array substrate includes a pixel circuit and a light-emitting diode. The pixel circuit includes a driving transistor including a first active medium made of polysilicon, and a switching transistor including a second active medium made of polysilicon. The first active medium has a first grain size. The second active medium has a second grain size larger than the first grain size. The light-emitting diode is coupled to the pixel circuit.

The present invention provides a VA type TFT array substrate and a manufacturing thereof. The manufacturing method for a VA type TFT array substrate of the present invention comprises that three pixel electrodes are formed in one pixel. The three pixel electrodes are connected to the same TFT but located on different structure layers. Therefore, the driving capabilities to liquid crystals are different. In the present invention, the three pixel electrodes are used to adjust the liquid crystal transmittances of three regions in one pixel, which is beneficial of keeping the brightness uniformity of the pixel when seeing from different angels, thereby enhancing the viewing angle of the VA type LCDs. The VA type TFT array substrate of the present invention disposes three pixel electrodes are formed in one pixel, which is beneficial of enhancing the viewing angle of the VA type LCDs.

A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formation region of a TFT, thereby preventing grain boundaries from lowering the mobility of the TFT greatly, from lowering ON current, and from increasing OFF current. Rectangular or stripe pattern depression and projection portions are formed on an insulating film. A semiconductor film is formed on the insulating film. The semiconductor film is irradiated with continuous wave laser light by running the laser light along the stripe pattern depression and projection portions of the insulating film or along the major or minor axis direction of the rectangle. Although continuous wave laser light is most preferred among laser light, it is also possible to use pulse oscillation laser light in irradiating the semiconductor film.

The present disclosure provides a display substrate, a fabricating method thereof, and a display device. The method includes forming a light shielding layer on a surface of a base substrate, and forming a plurality of thin film transistors on a side of the light shielding layer away from the base substrate. Forming a plurality of thin film transistors on a side of the light shielding layer away from the base substrate includes forming a semiconductor layer at a position where an active layer is to be formed in each of the plurality of thin film transistors, generating heat using the light shielding layer, and utilizing the heat to crystallize the semiconductor layer.