An image sensor is provided that includes a pixel array divided into a plurality of pixel groups. Each pixel group is clocked by a respective plurality of horizontal-register clocks. Clock signals for the image sensor are adjusted. Adjusting the clock signals includes phase-shifting each plurality of horizontal-register clocks by a respective phase delay of a plurality of phase delays. The phase delays are evenly spaced and are spaced symmetrically about zero. With the clock signals adjusted, a target is imaged using the image sensor.

An imaging device includes a semiconductor substrate having a surface, the semiconductor substrate including: a first layer of a first conductivity type; a second layer of a second conductivity type, the second layer being closer to the surface; and a pixel including: a photoelectric converter configured to convert light into charge; a first diffusion region of the first conductivity type, the first diffusion region facing the first layer via the second layer, configured to store at least a part of the charge; and a second diffusion region being a diffusion region closest to the first diffusion region among diffusion regions of the first conductivity type, the diffusion regions facing the first layer via the second layer. A distance between the second diffusion region and the first layer is equal to or less than 1.5 times a distance between the second diffusion region and the first diffusion region.

Provided are an image sensor with one or more image receivers for image switching, and an imaging system and method therefor. The image sensor includes an image sensor array to generate first image data for a first image; a receiver to receive, into the image sensor, second image data for a second image; an image selection circuit coupled to the image sensor array and the receiver to receive the first image data and the second image data and select one of the first image data and the second image data according to one or more image selection criteria and at least one of the first image data and the second image data; and a transmitter coupled to the image selection circuit to transmit the selected one of the first image data and the second image data from the image sensor.

Embodiments related to controlling of photo-generated charge carriers are described and depicted. At least one embodiment provides a semiconductor substrate comprising a photo-conversion region to convert light into photo-generated charge carriers; a region to accumulate the photo-generated charge carriers; a control electrode structure including a plurality of control electrodes to generate a potential distribution such that the photo-generated carriers are guided towards the region to accumulate the photo-generated charge carriers based on signals applied to the control electrode structure; a non-uniform doping profile in the semiconductor substrate to generate an electric field with vertical field vector components in at least a part of the photo-conversion region.

A first region includes first transfer column regions distributed in a first direction. A second region includes second transfer column regions distributed in the first direction. The second region is positioned downstream of the first region in a charge transfer direction. Lengths in a second direction of the first transfer column regions are equal. Lengths in the second direction of the second transfer column regions are longer than the length of the first transfer column region, and increase as the second transfer column region is positioned downstream in the charge transfer direction. A third region is disposed to correspond to the first region and extends along the first direction. A fourth region is disposed to correspond to the second region and extends such that an interval between the fourth region and a pixel region increases in response to a change in the lengths of the second transfer column regions.

Techniques are discloses regarding methods of manufacturing an imager as well as an imager device.

An image sensor utilizes a pure boron layer and a second epitaxial layer having a p-type dopant concentration gradient to enhance sensing DUV, VUV or EUV radiation. Sensing (circuit) elements and associated metal interconnects are fabricated on an upper surface of a first epitaxial layer, then the second epitaxial layer is formed on a lower surface of the first epitaxial layer, and then a pure boron layer is formed on the second epitaxial layer. The p-type dopant concentration gradient is generated by systematically increasing a concentration of p-type dopant in the gas used during deposition/growth of the second epitaxial layer such that a lowest p-type dopant concentration of the second epitaxial layer occurs immediately adjacent to the interface with the first epitaxial layer, and such that a highest p-type dopant concentration of the second epitaxial layer occurs immediately adjacent to the interface with pure boron layer.

An object of the present invention is to prevent a sensitivity difference between pixels. There are disposed plural unit cells each including plural photodiodes with plural transfer MOSFETs arranged respectively corresponding to the plural photodiodes, and a common MOSFET that amplifies and outputs signals read from the plural photodiodes. The unit cell includes reset and selecting MOSFETs. Within the unit cell, each pair of photodiode and corresponding transfer MOSFET has translational symmetry with respect to one another.

An imaging device includes: a photoelectric converter which converts light into signal charges; a charge accumulation region which is electrically connected to the photoelectric converter, and accumulates the signal charges; a transistor having a gate electrode which is electrically connected to the charge accumulation region; and a contact plug which electrically connects the photoelectric converter to the charge accumulation region, is in direct contact with the charge accumulation region, and comprises a semiconductor material.

The present disclosure relates to a solid-state image device, a method for manufacturing the solid-state image device, and an electronic device that are capable of reducing uneven application of a color filter. A color filter and a plurality of connection unit areas are formed on a sensor board. At least one of the connection unit areas is placed a predetermined interval away from the other connection unit areas. The present disclosure can be applied, for example, to a backside illumination CMOS image sensor with a layer structure, a front-side illumination CMOS image sensor with a layer structure, or a CCD image sensor.