A semiconductor device and method of manufacturing is provided, whereby a support structure is utilized to provide additional support for a conductive element in order to eliminate or reduce the formation of a defective surface such that the conductive element may be formed to have a thinner structure without suffering deleterious structures.

A semiconductor device and method of manufacturing is provided, whereby a support structure is utilized to provide additional support for a conductive element in order to eliminate or reduce the formation of a defective surface such that the conductive element may be formed to have a thinner structure without suffering deleterious structures.

Some embodiments relate to a semiconductor device. The semiconductor device includes a substrate. A first die is coupled beneath a lower surface of the substrate. A second die is coupled beneath the lower surface of the substrate and is disposed over the first die. A thermal contact pad is arranged beneath a lower surface of the second die and an upper surface of the first die. The thermal contact pad thermally isolates the first die from the second die.

Some embodiments relate to a semiconductor device. The semiconductor device includes a substrate and a first die coupled to a top surface of the substrate. A second die is coupled to a bottom surface of the substrate. A thermal contact pad couples the second die to the bottom surface of the substrate. The thermal contact pad electrically isolates the first die from the second die. A molding compound resides over the substrate and surrounds the first and second dies and the thermal contact pad.

An electroconductive adhesive comprising a plurality of metal fine particles A that each comprise a protective layer, wherein: (a) the metal fine particles A comprise two or more different types of particles, each coated with a C5-C7 monoalkylamine, wherein the two or more different types of particles comprise: (i) a first type of particle having an average particle diameter of 100-300 nm, and (ii) a second type of particle having an average particle diameter of 30-100 nm; and (b) the protective layer suppresses mutual aggregation of the metal fine particles A. Also disclosed are sintered objects of the electroconductive adhesive, methods of manufacturing the electroconductive adhesive and methods of bonding members with the electroconductive adhesive.

A wafer level package includes a wafer, a lead disposed of the wafer for connecting the wafer to an electrical circuit, and a core disposed of the lead. In some embodiments, the lead disposed of the wafer is a copper pillar, and the core is plated onto the copper pillar. In some embodiments, the core is polymer screen-plated onto the lead. In some embodiments, the core extends between at least approximately thirty-five micrometers (35 m) and fifty micrometers (50 m) from the lead. In some embodiments, the core covers between at least approximately one-third () and one-half () of the surface area of the lead. In some embodiments, the core comprises a stud-shape extending from the lead. In some embodiments, the core extends perpendicularly across the lead. In some embodiments, the core extends longitudinally along the lead. Further, a portion of the core can extend perpendicularly from a longitudinal core.

In accordance with an embodiment of the present invention, a method of forming a semiconductor device includes forming a contact layer over a first major surface of a substrate. The substrate includes device regions separated by kerf regions. The contact layer is disposed in the kerf region and the device regions. A structured solder layer is formed over the device regions. The contact layer is exposed at the kerf region after forming the structured solder layer. The contact layer and the substrate in the kerf regions are diced.

A semiconductor device includes a semiconductor layer, an electrode layer arranged on the semiconductor layer, a crack starting point layer arranged above the semiconductor layer, and a solder layer being in contact with the electrode layer and the crack starting point layer. A joining force between the solder layer and the crack starting point layer is smaller than a joining force between the solder layer and the electrode layer.

A semiconductor device includes a conductive plate having a main surface, a semiconductor chip arranged to be opposed to the main surface of the conductive plate, a sintered bonding layer arranged between the conductive plate and the semiconductor chip, a sealing resin provided to seal the semiconductor chip and the sintered bonding layer, and a primer layer arranged between the sintered bonding layer and the sealing resin, wherein a first outer edge of a bonding interface between the sintered bonding layer and the conductive plate is located on the inside of an outer circumference of the semiconductor chip and is located on the inside of a second outer edge of a bonding interface between the sintered bonding layer and the semiconductor chip.

A transparent display panel, a method for manufacturing the same, and a transparent display device are provided. the transparent display panel includes a first display substrate including: a first substrate and first pixel units thereon; and a second display substrate including: a second substrate and second pixel units thereon, the second pixel units are in one-to-one correspondence with the first pixel units, each first pixel unit includes a first display unit and a first transparent unit, and each second pixel unit includes a second display unit and a second transparent unit, an orthographic projection of the first display unit on the second substrate substantially coincides with that of the corresponding second display unit on the second substrate, and an orthographic projection of the first transparent unit on the second substrate substantially coincides with that of the corresponding second transparent unit on the second substrate.