Die-substrate assemblies having sinter-bonded backside via structures, and methods for fabricating such die-substrate assemblies, are disclosed. In embodiments, the method includes obtaining an integrated circuit (IC) die having a backside over which a backmetal layer is formed and into which a plated backside via extends. The IC die is attached to an electrically-conductive substrate by: (i) applying sinter precursor material over the backmetal layer and into the plated backside via; (ii) positioning a frontside of the electrically-conductive substrate adjacent the plated backmetal layer and in contact with the sinter precursor material; and (iii) sintering the sinter precursor material to yield a sintered bond layer attaching and electrically coupling the IC die to the frontside of the electrically-conductive substrate through the backmetal layer and through the plated backside via. The sintered bond layer contacts and is metallurgically bonded to the backside via lining.

Die-substrate assemblies having sinter-bonded backside via structures, and methods for fabricating such die-substrate assemblies, are disclosed. In embodiments, the method includes obtaining an integrated circuit (IC) die having a backside over which a backmetal layer is formed and into which a plated backside via extends. The IC die is attached to an electrically-conductive substrate by: (i) applying sinter precursor material over the backmetal layer and into the plated backside via; (ii) positioning a frontside of the electrically-conductive substrate adjacent the plated backmetal layer and in contact with the sinter precursor material; and (iii) sintering the sinter precursor material to yield a sintered bond layer attaching and electrically coupling the IC die to the frontside of the electrically-conductive substrate through the backmetal layer and through the plated backside via. The sintered bond layer contacts and is metallurgically bonded to the backside via lining.

A semiconductor device of a hybrid type includes: a light-emitting element forming a power loop; a semiconductor integrated circuit element including a switching element; and a bypass capacitor. The light-emitting element and the switching element constitute a layered body in which respective principal surfaces of the light-emitting element and the switching element are layered in parallel and face-to-face. The bypass capacitor includes one electrode connected to a lower element of the layered body, and an other electrode connected to an upper element of the layered body. In a plan view, when a direction from the one electrode to the other electrode inside the bypass capacitor is a first direction, the bypass capacitor is arranged so that a side of the bypass capacitor parallel to the first direction includes a portion that is parallel to and faces one peripheral side of the layered body.

The present technology relates to a solid-state image pickup element, electronic equipment, and a semiconductor apparatus that make it possible to reduce a surface reflection in an area in which a slit is formed and improve flare characteristics. A solid-state image pickup element includes a pixel area in which a plurality of pixels is two-dimensionally arranged in a matrix, a chip mounting area in which a chip is flip-chip mounted, and a dam area that is arranged around the chip mounting area and in which one or more slits that block an outflow of a resin are formed. In the dam area, the same OCL as that in the pixel area is formed. The present technology can be applied to a solid-state image pickup element etc. in which a chip is flip-chip mounted, for example.

A method of manufacturing an electronic package structure is disclosed. A solder mask layer is formed on an upper surface of a substrate. A recessed area is formed in the solder mask layer. An electronic component is mounted on the substrate. Pads are disposed on the upper surface of the substrate. The pads respectively correspond to the bumps on a first surface of the electronic component. The pads are electrically connected to the bumps. A heat treatment is performed to make the first surface close to the substrate and form a cavity in the recessed area. The cavity is between the first surface of the electronic component, the solder mask layer and the upper surface of the substrate.

A chip packaging structure and a method for preparing the same, and a method for packaging a semiconductor structure are provided, which relate to the technical field of semiconductors, and solve the technical problem of low yield of a chip. The chip packaging structure includes: a chip, an intermediate insulating layer arranged on the chip and a non-conductive adhesive layer arranged on the intermediate insulating layer, where a plurality of conductive pillar bumps are arranged on the chip, and each conductive pillar bump penetrates through the intermediate insulating layer; the intermediate insulating layer is provided with at least one group of holding holes, and the non-conductive adhesive layer fills the holding holes, so that grooves respectively matched with the holding holes are formed in a surface, far away from the intermediate insulating layer, of the non-conductive adhesive layer.

A semiconductor package includes a first semiconductor chip including a through silicon via in the first semiconductor chip and a first trench portion in an upper portion of the first semiconductor chip, a second semiconductor chip on an upper surface of the first semiconductor chip and being electrically connected to the first semiconductor chip through the through silicon via of the first semiconductor chip, and an insulating bonding layer between the first semiconductor chip and the second semiconductor chip. The insulating bonding layer fills the first trench portion.

A method of forming a chip assembly may include forming a plurality of cavities in a carrier; The method may further include arranging a die attach liquid in each of the cavities; arranging a plurality of chips on the die attach liquid, each chip comprising a rear side metallization and a rear side interconnect material disposed over the rear side metallization, wherein the rear side interconnect material faces the carrier; evaporating the die attach liquid; and after the evaporating the die attach liquid, fixing the plurality of chips to the carrier.

In one example, a semiconductor die comprises: a semiconductor substrate having a circuit formed therein; one or more metal layers on the semiconductor substrate, the one or more metal layers coupled to the circuit; a metal interface structure on the one or more metal layers, in which the metal interface structure has opposite first and second surfaces, and the first surface faces the one or more metal layers; and a dissolvable metal layer on the second surface.

A semiconductor device having a capillary flow structure for a direct chip attachment is provided herein. The semiconductor device generally includes a substrate and a semiconductor die having a conductive pillar electrically coupled to the substrate. The front side of the semiconductor die may be spaced a distance apart from the substrate forming a gap. The semiconductor device further includes first and second elongate capillary flow structures projecting from the front side of the semiconductor die at least partially extending toward the substrate. The first and second elongate capillary flow structures may be spaced apart from each other at a first width configured to induce capillary flow of an underfill material along a length of the first and second elongate capillary flow structures. The first and second capillary flow structures may include pairs of elongate capillary flow structures forming passageways therebetween to induce capillary flow at an increased flow rate.