An adhesive member includes: a conductive particle layer including a plurality of conductive particles; a non-conductive layer disposed on the conductive particle layer; and a screening layer interposed between the conductive particle layer and the non-conductive layer and includes a plurality of screening members spaced apart from each other.

An adhesive member includes: a conductive particle layer including a plurality of conductive particles; a non-conductive layer disposed on the conductive particle layer; and a screening layer interposed between the conductive particle layer and the non-conductive layer and includes a plurality of screening members spaced apart from each other.

Aspects of the subject disclosure may include, for example, bonding III-Nitride epitaxial layer(s) to a carrier wafer, wherein the III-Nitride epitaxial layer(s) are grown on a non-native substrate, after the bonding, removing at least a portion of the non-native substrate from the III-Nitride epitaxial layer(s), processing the III-Nitride epitaxial layer(s) to derive an array of III-Nitride islands, establishing a metal layer over the array of III-Nitride islands, resulting in an array of metal-coated III-Nitride islands, arranging the carrier wafer relative to a host wafer to position the array of metal-coated III-Nitride islands on a surface of the host wafer, causing the array of metal-coated III-Nitride islands and the surface of the host wafer to eutectically bond, and removing the carrier wafer to yield an integrated arrangement of III-Nitride islands on the host wafer. Additional embodiments are disclosed.

Aspects of the subject disclosure may include, for example, bonding III-Nitride epitaxial layer(s) to a carrier wafer, wherein the III-Nitride epitaxial layer(s) are grown on a non-native substrate, after the bonding, removing at least a portion of the non-native substrate from the III-Nitride epitaxial layer(s), processing the III-Nitride epitaxial layer(s) to derive an array of III-Nitride islands, establishing a metal layer over the array of III-Nitride islands, resulting in an array of metal-coated III-Nitride islands, arranging the carrier wafer relative to a host wafer to position the array of metal-coated III-Nitride islands on a surface of the host wafer, causing the array of metal-coated III-Nitride islands and the surface of the host wafer to eutectically bond, and removing the carrier wafer to yield an integrated arrangement of III-Nitride islands on the host wafer. Additional embodiments are disclosed.

In some embodiments, the present disclosure relates to an integrated chip (IC), including a substrate, a first die disposed over the substrate, a metal wire attached to a frontside of the first die, and a first plurality of die stopper bumps disposed along a backside of the first die and configured to control an angle of operation of the first die. The first plurality of die stopper bumps directly contacts a backside surface of the first die.

A semiconductor device includes a first semiconductor chip having a first surface and a second surface; a first adhesive layer on the first surface; a second semiconductor chip that includes a third surface and a fourth surface, and a connection bump on the third surface. The connection bump is coupled to the first adhesive layer. The semiconductor device includes a wiring substrate connected to the connection bump. The semiconductor device includes a first resin layer covering the connection bump between the second semiconductor chip and the wiring substrate, and covers one side surface of the second semiconductor chip connecting the third surface and the fourth surface. The first adhesive layer covers an upper portion of the at least one side surface. The first resin layer covers a lower portion of the at least one side surface. The first adhesive layer and the first resin layer contact each other.

A semiconductor chip (6) having flexibility is bonded to a heat radiation material (4) with solder. The semiconductor chip (6) is pressed by a tip of a pressing member (9,11) from an upper side. As a result, convex warpage of the semiconductor chip (6) can be suppressed. Furthermore, since voids can be prevented from remaining in the solder (7), the heat radiation of the semiconductor device can be enhanced.

A semiconductor chip (6) having flexibility is bonded to a heat radiation material (4) with solder. The semiconductor chip (6) is pressed by a tip of a pressing member (9,11) from an upper side. As a result, convex warpage of the semiconductor chip (6) can be suppressed. Furthermore, since voids can be prevented from remaining in the solder (7), the heat radiation of the semiconductor device can be enhanced.

A printed circuit board assembly of an implantable medical device comprises a printed circuit board and a sensor device that is arranged at the printed circuit board and joined to the printed circuit board by way of an adhesive layer. It is provided in the process that the adhesive layer is formed of an adhesive compound in which glass spheres are embedded. In this way, a printed circuit board assembly is provided which, in a simple, inexpensive manner, allows a sensor device to be joined to a printed circuit board for installation in a medical device, with advantageous mechanical decoupling and improved process reliability.

A semiconductor chip (6) having flexibility is bonded to a heat radiation material (4) with solder. The semiconductor chip (6) is pressed by a tip of a pressing member (9,11) from an upper side. As a result, convex warpage of the semiconductor chip (6) can be suppressed. Furthermore, since voids can be prevented from remaining in the solder (7), the heat radiation of the semiconductor device can be enhanced.