A method for transferring a micro device is provided. The method includes: forming a liquid layer on the micro device attached on a transfer plate; placing the micro device over a receiving substrate such that the liquid layer is between the micro device and a contact pad of the receiving substrate and contacts the contact pad; and evaporating the liquid layer such that the micro device is bound to and in contact with the contact pad.

Encapsulated stress mitigation layers and assemblies having the same are disclosed. An assembly that includes a first substrate, a second substrate, an encapsulating layer disposed between the first and second substrates, and a stress mitigation layer disposed in the encapsulating layer such that the stress mitigation layer is encapsulated within the encapsulating layer. The stress mitigation layer has a lower melting temperature relative to a higher melting temperature of the encapsulating layer. The assembly includes an intermetallic compound layer disposed between the first substrate and the encapsulating layer such that the encapsulating layer is separated from the first substrate by the intermetallic compound layer. The stress mitigation layer melts into a liquid when the assembly operates at a temperature above the low melting temperature of the stress mitigation layer and the encapsulating layer maintains the liquid of the stress mitigation layer within the assembly.

An apparatus is provided which comprises: a die comprising an integrated circuit, a first material layer comprising a first metal, the first material layer on a surface of the die, and extending at least between opposite lateral sides of the die, a second material layer comprising a second metal over the first material layer, and a third material layer comprising silver particles and having a porosity greater than that of the second material layer, the third material layer between the first material layer and the second material layer. Other embodiments are also disclosed and claimed.

A semiconductor arrangement comprises a leadframe comprising at least a first and a second carrier, the first and second carriers being arranged laterally besides each other, at least a first and a second semiconductor die, the first semiconductor die being arranged on and electrically coupled to the first carrier and the second semiconductor die being arranged on and electrically coupled to the second carrier, and an interconnection configured to mechanically fix the first carrier to the second carrier and to electrically insulate the first carrier from the second carrier, wherein the first and second semiconductor dies are at least partially exposed to the outside.

A device includes a driver circuit, a first semiconductor chip monolithically integrated with the driver circuit in a first semiconductor material, and a second semiconductor chip integrated in a second semiconductor material. The second semiconductor material is a compound semiconductor.

An electrical joint structure including a substrate, a multi-layer bonding structure, and a blocking layer is provided. The multi-layer bonding structure is present on the substrate and includes a diffusive metal layer and a tin-rich layer. The diffusive metal layer includes a copper-tin alloy on a surface of the diffusive metal layer. The surface faces the substrate. A thickness of the copper-tin alloy is less than or equal to 2 m. The tin-rich layer is present on and in contact with the diffusive metal layer. The blocking layer is present between the multi-layer bonding structure and the substrate and at least in contact with a part of said copper-tin alloy, such that the multi-layer bonding structure is spaced apart from the substrate.

The disclosed component module includes a component comprising at least one electric contact to which at least one porous contact piece is connected; the component module further includes a cooling system for fluid-based cooling, said cooling system comprising one or more cooling ducts which are formed by pores of the porous contact piece. The disclosed power module comprises a component module of said type.

A method of forming a chip assembly may include forming a plurality of cavities in a carrier; The method may further include arranging a die attach liquid in each of the cavities; arranging a plurality of chips on the die attach liquid, each chip comprising a rear side metallization and a rear side interconnect material disposed over the rear side metallization, wherein the rear side interconnect material faces the carrier; evaporating the die attach liquid; and after the evaporating the die attach liquid, fixing the plurality of chips to the carrier.

Encapsulated stress mitigation layers and assemblies having the same are disclosed. An assembly that includes a first substrate, a second substrate, an encapsulating layer disposed between the first and second substrates, and a stress mitigation layer disposed in the encapsulating layer such that the stress mitigation layer is encapsulated within the encapsulating layer. The stress mitigation layer has a lower melting temperature relative to a higher melting temperature of the encapsulating layer. The assembly includes an intermetallic compound layer disposed between the first substrate and the encapsulating layer such that the encapsulating layer is separated from the first substrate by the intermetallic compound layer. The stress mitigation layer melts into a liquid when the assembly operates at a temperature above the low melting temperature of the stress mitigation layer and the encapsulating layer maintains the liquid of the stress mitigation layer within the assembly.

A process for forming an electric heater comprising the steps: (a) providing a heater element and a power supply, (b) applying a layer of a copper paste onto the heater element and/or the power supply and drying the applied layer of copper paste, (c1) applying a solder agent onto the dried copper paste and appropriately arranging the heater element and the power supply such that the heater element and the power supply contact each other by means of the dried copper paste and the solder agent or (c2) appropriately arranging the heater element and the power supply such that the heater element and the power supply contact each other by means of the dried copper paste, and applying a solder agent next to the dried copper paste or (c3) if in step (b) the copper paste has been applied only onto the heater element and then dried, applying a solder agent onto the power supply and appropriately arranging the heater element and the power supply such that the heater element and the power supply contact each other by means of the dried copper paste and the solder agent or (c4) if in step (b) the copper paste has been applied only onto the power supply and then dried, applying a solder agent onto the heater element and appropriately arranging the heater element and the power supply such that the heater element and the power supply contact each other by means of the dried copper paste and the solder agent, and (d) diffusion soldering the arrangement produced in step (c1), (c2), (c3) or (c4) to form a connection between the heater element and the power supply, wherein the copper paste comprises or consists of (i) 66-99 wt.-% of at least one type of particles selected from the group consisting of copper particles, copper-rich copper/zinc alloy particles, and copper-rich copper/tin alloy particles, (ii) 0-20 wt.-% of at least one type of solder particles selected from the group consisting of tin particles, tin-rich tin/copper alloy particles, tin-rich tin/silver alloy particles, and tin-rich tin/copper/silver alloy particles, and (iii) 1-20 wt.-% of a vehicle.