A semiconductor device includes: a carrier having a die pad and a contact; a semiconductor die having opposing first and second main sides and being attached to the die pad by a first solder joint such that the second main side faces the die pad; and a contact clip having a first contact region and a second contact region. The first contact is attached to the first main side by a second solder joint. The second contact region is attached to the contact by a third solder joint. The first contact region has a convex shape facing towards the first main side such that a distance between the first main side and the first contact region increases from a base of the convex shape towards an edge of the first contact region. The base runs along a line that is substantially perpendicular to a longitudinal axis of the contact clip.

Various embodiments include a solder preform for diffusion soldering comprising a sandwich structure having a multiplicity of first layers and a multiplicity of second layers alternating with one another in the sandwich structure. The first layers each comprise a metal foil. The second layers each comprise metal particles and a binder forming a paste.

A method of forming a chip assembly may include forming a plurality of cavities in a carrier; The method may further include arranging a die attach liquid in each of the cavities; arranging a plurality of chips on the die attach liquid, each chip comprising a rear side metallization and a rear side interconnect material disposed over the rear side metallization, wherein the rear side interconnect material faces the carrier; evaporating the die attach liquid; and after the evaporating the die attach liquid, fixing the plurality of chips to the carrier.

Encapsulated stress mitigation layers and assemblies having the same are disclosed. An assembly that includes a first substrate, a second substrate, an encapsulating layer disposed between the first and second substrates, and a stress mitigation layer disposed in the encapsulating layer such that the stress mitigation layer is encapsulated within the encapsulating layer. The stress mitigation layer has a lower melting temperature relative to a higher melting temperature of the encapsulating layer. The assembly includes an intermetallic compound layer disposed between the first substrate and the encapsulating layer such that the encapsulating layer is separated from the first substrate by the intermetallic compound layer. The stress mitigation layer melts into a liquid when the assembly operates at a temperature above the low melting temperature of the stress mitigation layer and the encapsulating layer maintains the liquid of the stress mitigation layer within the assembly.

[Problem] The present invention provides a method for bonding semiconductor elements while assuring excellent electric conductivity and transparency at an interface, and a junction structure according to the bonding method. The present invention also provides a method for bonding semiconductor elements wherein excellent electric conductivity is assured at an interface and optical characteristics favorable for element characteristics can be designed, and a junction structure according to the bonding method. [Solution] Electrically conductive nano particles which are not covered with organic molecules are arrayed on a surface of one semiconductor element without causing optical loss, and another semiconductor element is pressure-bonded thereagainst.

Provided is a power semiconductor module including: a metal base plate; an insulating substrate arranged on the metal base plate and provided with an electrode; a semiconductor element arranged on the insulating substrate; a case arranged on the metal base plate so as to surround the insulating substrate and the semiconductor element; and a potting material filled into a space defined by the metal base plate and the case so as to encapsulate the insulating substrate and the semiconductor element. The potting material includes: a silicone gel; and a conductivity-imparting agent that is added to the gel and contains a silicon atom and an ionic group.

Provided is a power semiconductor module including: a metal base plate; an insulating substrate arranged on the metal base plate and provided with an electrode; a semiconductor element arranged on the insulating substrate; a case arranged on the metal base plate so as to surround the insulating substrate and the semiconductor element; and a potting material filled into a space defined by the metal base plate and the case so as to encapsulate the insulating substrate and the semiconductor element. The potting material includes: a silicone gel; and a conductivity-imparting agent that is added to the gel and contains a silicon atom and an ionic group.

According to an embodiment of a method described herein, a silicon carbide substrate is provided that includes a plurality of device regions. A front side metallization may be provided at a front side of the silicon carbide substrate. The method may further comprise providing an auxiliary structure at a backside of the silicon carbide substrate. The auxiliary structure includes a plurality of laterally separated metal portions. Each metal portion is in contact with one device region of the plurality of device regions.

Provided is a semiconductor device including electronic components electrically joined to each other via a metal nanoparticle sintered layer, wherein the metal nanoparticle sintered layer has formed therein a metal diffusion region in which a metal constituting a metallization layer formed on a surface of one of the electronic components is diffused, and in which the metal is present in an amount of 10 mass % or more and less than 100 mass % according to TEM-EDS analysis, and wherein the metal diffusion region has a thickness smaller than a thickness of the metallization layer.

A method for fabricating a SiC power semiconductor device includes: providing a SiC power semiconductor die; depositing a metallization layer over the power semiconductor die, the metallization layer including a first metal; arranging the power semiconductor die over a die carrier such that the metallization layer faces the die carrier, the die carrier being at least partially covered by a plating that includes Ni; and diffusion soldering the power semiconductor die to the die carrier such that a first intermetallic compound is formed between the power semiconductor die and the plating, the first intermetallic compound including Ni.sub.3Sn.sub.4.