The invention provides a film having a high relative permittivity, a high volume resistivity, and a high breakdown strength. The film has a relative permittivity of 9 or higher at a frequency of 1 kHz and 30 C., a volume resistivity of 5E+15 .Math.cm or higher at 30 C., and a breakdown strength of 500 V/m or higher.

An atomic layer deposition-inhibiting material composed of a fluorine-containing resin that has a fluorine content of 30 at % or greater, has at least one tertiary carbon atom and quaternary carbon atom, and lacks ester groups, hydroxyl groups, carboxyl groups, and imide groups.

A capacitor includes a first electrode, a second electrode, and a dielectric layer of molecular material disposed between said first and second electrodes. The molecular material is described by the general formula:

D.sub.p-(Core)-H.sub.q,

where Core is a polarizable conductive anisometric core, having conjugated -systems, and characterized by a longitudinal axis, D and H are insulating substituents, and p and q are numbers of the D and H substituents accordingly. And Core possesses at least one dopant group that enhances polarizability.

A vinylidene fluoride resin film is produced by using a film composition containing at least a vinylidene fluoride resin and organic particles. The vinylidene fluoride resin film includes a plurality of protrusions on at least one surface thereof. Among the plurality of protrusions, the number of protrusions greater than 0.10 m in height from a flat surface at which the protrusions are not present is from 40 to 400, per 0.10 mm.sup.2 of the vinylidene fluoride resin film

A capacitor includes a first electrode, a second electrode, and a dielectric layer of molecular material disposed between said first and second electrodes. The molecular material is described by the general formula:
D.sub.p-(Core)-H.sub.q,
where Core is a polarizable conductive anisometric core, having conjugated -systems, and characterized by a longitudinal axis, D and H are insulating substituents, and p and q are numbers of the D and H substituents accordingly. And Core possesses at least one dopant group that enhances polarizability.

Capacitors including ceramic composite materials, and associated methods are shown. In selected examples, ceramic materials for capacitor dielectrics are processed at low temperatures that permit incorporation of low temperature components, such as polymer components.

Process for producing of a capacitor film comprising the steps of (a) polymerizing propylene in the presence of a catalyst comprising a solid catalyst system obtaining a polypropylene, (b) subjecting said polypropylene to a film forming process obtaining a capacitor film, wherein during the polymerization step (a) said catalyst comprising the solid catalyst system fragments into nanosized catalyst fragments being distributed in said polypropylene, said solid catalyst system comprises a transition metal, a metal which is selected from one of the groups 1 to 3 of the periodic table (IUPAC), and an internal electron donor.

The present invention provides monomers, analogs, and/or derivatives of bisphenols substituted with one or more fluoromethyl groups. These monomers, analogs, and/or derivatives can be used to form oligomers and/or polymers, which in turn can be used to make compounds with dielectric properties suitable for dielectric materials, including for example, use in energy dense capacitors. In a preferred embodiment, the compounds can comprise a polycarbonate of a homopolymer, copolymer, and/or terpolymer of a bisphenol with one or more fluoromethyl substitution groups. In an aspect of the invention the compounds chosen can be selected based on various desired characteristics, including, for example, their energy density, glass transition temperature, dielectric loss, and/or dipole density.

The present invention provides a film having excellent heat resistance and a small difference between the permittivity at low temperatures and the permittivity at high temperatures. The present invention provides a film having a relative permittivity of 8 or more at a frequency of 1 kHz at 30 C., wherein the rate of change is 8 to +8% as calculated from a relative permittivity A at a frequency of 1 kHz at 30 C. and a relative permittivity B at a frequency of 1 kHz at 150 C. according to the following formula:

Rate of change (%)=(BA)/A100.

Modified fluoropolymers, and methods for manufacturing modified fluoropolymers are provided. According to at least one embodiment, chemically modified fluoropolymers, via radical generation and subsequent reaction, produce fluoropolymers having fluorinated moieties and/or non-fluorinated moieties, disrupting highly coherent polar domains, wherein the non-fluorinated moieties include, for example, at least one of carbonyl, hydroxyl, alkoxy, alkyl, and/or aromatic chemical groups.