This application relates to a photoresist removal method, including: acquiring a target wafer, a photoresist being provided on a surface of the target wafer, a surface of a photoresist layer of the photoresist being plated with a metal overhead layer; immersing the target wafer in a first organic solvent at a first temperature in a water bath for a first duration; rinsing the target wafer with a new first organic solvent in response to an end of the first duration; performing, in the first organic solvent, ultrasonic cleaning on the rinsed target wafer for a second duration based on a target ultrasonic power; removing the residual first organic solvent on the surface of the target wafer in response to an end of the second duration; and drying the target wafer with the solvent removed by simultaneous centrifugal drying and gas purging to obtain the target wafer with the photoresist removed.

The present invention relates to an etching device and an etching method thereof, the etching device comprising: an etchant supply unit for supplying an etchant to an etching chamber; a rinsing liquid supply unit for supplying a rinsing liquid to the etching chamber; a cleaning liquid supply unit for supplying a cleaning liquid to the etching chamber; and a first pressurization maintaining unit for maintaining at least one of the etching chamber and the etchant supply unit in a pressurized atmosphere.

The present invention relates to an etching device comprising: an etching chamber; an opening/closing unit for opening/closing the etching chamber; and a locking unit for selectively locking the opening/closing unit.

The present invention relates to an etching device using an etching chamber, comprising: an etchant storage chamber in which an etchant is stored; a connection unit communicating with the etching liquid storage chamber; an etching chamber which is connected with the etching liquid storage chamber through the connection unit, and in which an object is etched; and a pressurization maintaining unit for maintaining the etching liquid storage chamber and/or the etching chamber in a pressurized atmosphere.

A substrate cleaning apparatus includes: a support part configured to support a substrate by bring into contact with a rear surface of the substrate; an annular member disposed to surround a periphery of the substrate supported on the support part and including an inclined surface that is inclined with respect to a horizontal plane in a diametrical direction of the annular member; a rotation part configured to rotate the support part and the annular member; a first supply part configured to supply a cleaning liquid toward the rear surface of the substrate supported on the support part; and a second supply part configured to supply the cleaning liquid toward the inclined surface.

A method and device for wet processing and integrated circuit (IC) substrates using a fresh mixture of chemical steam vapors and chemical gases may include loading the substrates into an enclosed process chamber with a 90° rotatable middle section; closing the process chamber; conditioning the process chamber with preset temperature nitrogen gas; injecting a fresh mixture of chemical gas and chemical steam into the processing chamber sequentially to condense wet process fresh chemicals on site; circulating the mixture of chemical steam vapors or liquid chemicals and rotating at least one magnetic rod within the processing chamber to treat the substrates uniformly; performing a deionized water rinse of the substrates and turning on the adjustable multi-modulated megasonic energy when necessary; injecting solvent isopropyl alcohol steam vapor into the processing chamber for the Marangoni drying; completely drying the substrates and the processing chamber with hot nitrogen gas; and unloading the treated substrates.

A wafer cleaning method is provided. The wafer cleaning method includes providing a wafer on a stage that is inside of a chamber. The wafer is fixed to the stage by moving a grip pin connected to an edge of the stage. First ultrapure water is supplied onto the wafer while the wafer is rotating at a first rotation speed. The grip pin is released from the wafer by moving the grip pin. A development process is performed by supplying liquid chemical onto the wafer while the wafer is rotating at a second rotation speed that is less than the first rotation speed.

The present disclosure provides a substrate treating apparatus. The substrate treating apparatus includes a support unit that supports a substrate, and a heating unit that irradiates a beam to the substrate and heat the substrate, and the heating unit further includes an irradiation part that irradiates the beam, and a rotation part that rotates the beam.

A substrate processing device is a device continuously performing wet processing and dry processing. The substrate processing device includes a plurality of processing modules. Each of the plurality of processing modules includes a single wet processing unit performing wet processing on a substrate; a single dry processing unit performing dry processing on a substrate; and a single transfer unit located between the wet processing unit and the dry processing unit to transfer a substrate between the wet processing unit and the dry processing unit.

A substrate processing method includes a first processing liquid supplying step of supplying a first processing liquid to an upper surface of the substrate, a holding layer forming step of solidifying or curing the first processing liquid to form a particle holding layer on the upper surface of the substrate, a holding layer removing step of peeling and removing the particle holding layer from the upper surface of the substrate, a liquid film forming step of forming, after removing the particle holding layer from the substrate, a liquid film of the second processing liquid, a solidifying step of cooling the liquid film to a temperature not more than a melting point of the sublimable substance to make the liquid film solidify on the substrate and form a solid film, and a sublimating step of sublimating and thereby removing the solid film from the substrate.