A wafer processing apparatus of an embodiment of the present disclosure may include an equipment front end module (EFEM), a wafer transfer chamber, a wafer processing chamber, and a wafer transfer arm. In addition, the EFEM may include an atmosphere control chamber configured to store a wafer carrier accommodating wafers, an upper air supplier configured to supply air into the atmosphere control chamber, an EFEM chamber under the atmosphere control chamber, a load lock arranged to be vertically overlapped by at least a portion of the EFEM chamber, and an EFEM arm configured to transfer the wafer carrier.

A substrate liquid processing apparatus includes an inner tub 34A having a top opening and storing a processing liquid therein; an outer tub 34B provided outside the inner tub; a first cover body 71 configured to move between a closing position where a first region of the top opening is closed and an opening position where the first region is opened; and a second cover body 72 configured to move between a closing position where a second region of the top opening is closed and an opening position where the second region is opened. The first cover body has a bottom wall 711R and a sidewall 712R extended upwards therefrom, and the second cover body has a bottom wall 721R and a sidewall 722R extended upwards therefrom. Further, when being placed at the closing positions, the sidewalls closely face each other with a gap G having a height H.

Disclosed are a device and method for continuously performing grain boundary diffusion and heat treatment, characterized in that the alloy workpiece or the metal workpiece are arranged in a relatively independent processing box together with a diffusion source; the device comprises, in successive arrangement, a grain boundary diffusion chamber, a first cooling chamber, a heat treatment chamber, and a second cooling chamber, and a transfer system provided between various chambers for delivering the processing box; each of the first cooling chamber and the second cooling chamber uses an air cooling system, and the cooling air temperature of the first cooling chamber is above 25° C. and at least differs by 550° C. from the grain boundary diffusion temperature of the grain boundary diffusion chamber; the cooling air temperature of the second cooling chamber is above 25° C. and at least differs by 300° C. from the heat treatment temperature of the heat treatment chamber; and the cooling chamber has a pressure of 50 kPa to 100 kPa. The device provided by the present invention can increase the cooling rate and production efficiency, and improve product consistency.

A substrate liquid processing apparatus includes a processing tub configured to store a processing liquid therein; a processing liquid supply configured to supply the processing liquid into the processing tub; a processing liquid drain device configured to drain the processing liquid from the processing tub; and a controller configured to control the processing liquid supply and the processing liquid drain device. The controller calculates, in response to an instruction to change a concentration of a preset component of the processing liquid stored in the processing tub, a drain amount and a feed amount of the processing liquid from/into the processing tub based on information upon a current concentration of the preset component, information upon a concentration increment thereof per unit time and information upon the changed concentration thereof, and controls the processing liquid supply and the processing liquid drain device based on the calculation result.

Provided is a substrate holder and a substrate treatment apparatus capable of positioning a substrate even in a case in which the substrate receives a frictional force and the like from a support surface. A substrate holder 200 according to the present invention includes: a first holding member 300; a second holding member 500 adapted to pinch a substrate W with the first holding member 300; three or more positioning members 360 including contact surfaces 342 that come into contact with side end portions of the substrate W; a first moving member 380 including a plurality of engaging portions 384 that are engaged with the positioning members 360 such that the positioning members 360 with a state in which distances of an ideal axis L and contact surfaces 376 of the positioning members 360 are equal to each other maintained; and a first biasing member 310 adapted to bias the first moving member 380, in which the first moving member 380 delivers a biasing force of the first biasing member 310 to each of the positioning members 360, and the positioning members 360 are biased in a direction in which the contact surfaces 376 approaches the ideal axis L with the delivered biasing force.

A method of forming a semiconductor device includes loading a first wafer and a second wafer into a wafer bonding system. A relative humidity within the wafer bonding system is measured a first time. After measuring the relative humidity, the relative humidity within the wafer bonding system may be adjusted to be within a desired range. When the relative humidity is within the desired range, the first wafer is bonded to the second wafer.

Provided is a heat treatment unit, including: a chamber providing a substrate processing apparatus including: a process chamber in which an upper chamber and a lower chamber are in contact with each other to form a treatment space defined by the upper chamber and the lower chamber; a heating plate positioned in the treatment space to heat a substrate; a lift pin for placing the substrate on the heating plate or for moving the substrate placed on the heating plate to be spaced apart from the heating plate; a driving member connected to the upper chamber or the lower chamber to vertically drive the upper chamber or the lower chamber; an exhaust member connected to a central region of the upper chamber to exhaust the treatment space; and an airflow blocking member provided on an upper surface of the heating plate and formed to surround an edge of the substrate so as to block a surrounding airflow from approaching the edge of the substrate.

Provided is a pump for supplying a liquid, the pump including: a flexible tube body including a pump chamber; first flange provided at one end of the tube body and including an inlet communicating with the pump chamber; a second flange provided at the other end of the tube body and including an outlet communicating with the pump chamber; and driving unit for transmitting rotational force to the tube body to twist the tube body.

A substrate processing apparatus capable of minimizing process defects by controlling mist in a processing bath is provided. The substrate treating apparatus comprises a first processing bath and a second processing bath disposed adjacent to each other in a first direction, a first partition wall disposed between the first processing bath and the second processing bath and having an entrance, through which a substrate passes, a transfer unit installed in the first processing bath and the second processing bath and for moving the substrate, a chemical solution supply unit installed in the first processing bath and for providing a chemical solution to the substrate, and a first exhaust unit disposed between the first processing bath and the second processing bath, connected to the first partition wall, comprising a plurality of exhaust holes disposed along a second direction different from the first direction, and for exhausting mist in the first processing bath.

A method and apparatus for processing a semiconductor is disclosed herein. In one embodiment, a processing system for semiconductor processing is disclosed. The processing chamber includes two transfer chambers, a processing chamber, and a rotation module. The processing chamber is coupled to the transfer chamber. The rotation module is positioned between the transfer chambers. The rotation module is configured to rotate the substrate. The transfer chambers are configured to transfer the substrate between the processing chamber and the transfer chamber. In another embodiment, a method for processing a substrate on the apparatus is disclosed herein.