Systems, apparatuses, and methods may provide for technology for forming extended air gaps for bitline contacts. For example, such technology patterns and etches a dielectric layer and a bitline layer to create bitline contacts in a memory die. An air gap dielectric layer is deposited to form an air gap between adjacent bitline contacts, and wherein the air gap has a height dimension that extends past a height dimension of the bitline contacts.

The present disclosure provides one embodiment of a semiconductor structure. The semiconductor structure includes a first active region and a second fin active region extruded from a semiconductor substrate; an isolation featured formed in the semiconductor substrate and being interposed between the first and second fin active regions; a dielectric gate disposed on the isolation feature; a first gate stack disposed on the first fin active region and a second gate stack disposed on the second fin active region; a first source/drain feature formed in the first fin active region and interposed between the first gate stack and the dielectric gate; a second source/drain feature formed in the second fin active region and interposed between the second gate stack and the dielectric gate; a contact feature formed in a first inter-level dielectric material layer and landing on the first and second source/drain features and extending over the dielectric gate.

A 3D integrated circuit, the circuit including: a first level including a first wafer, the first wafer including a first crystalline substrate, a plurality of first transistors, and first copper interconnecting layers, where the first copper interconnecting layers at least interconnect the plurality of first transistors; and a second level including a second wafer, the second wafer including a second crystalline substrate, a plurality of second transistors, and second copper interconnecting layers, where the second copper interconnecting layers at least interconnect the plurality of second transistors, where the second level is bonded to the first level, where the bonded includes metal to metal bonding, where the bonded includes oxide to oxide bonding, and where at least one of the second transistors include a replacement gate.

Structures and methods for reducing thermal expansion mismatch during chip scale packaging are disclosed. In one example, a semiconductor structure is disclosed. The semiconductor structure includes a first metal layer over a substrate, a dielectric region, and a polymer region. The first metal layer comprises a first device metal structure. The dielectric region is formed over the first metal layer. The polymer region is formed over the dielectric region. The dielectric region comprises a plurality of metal layers and an inter-metal dielectric layer comprising dielectric material between each pair of two adjacent metal layers in the plurality of metal layers. Each of the plurality of metal layers comprises a dummy metal structure over the first device metal structure. The dummy metal structures in each pair of two adjacent metal layers in the plurality of metal layers shield respectively two non-overlapping portions of the first device metal structure from a top view of the semiconductor structure.

The present disclosure provides a semiconductor structure and a semiconductor device. The semiconductor structure includes a first conductive layer, a first barrier layer, and an insulating layer. The first conductive layer includes at least two traces, and a recess is formed between two adjacent ones of the traces. The first barrier layer is provided on a sidewall of the recess. The insulating layer fills the recess, and an air gap is formed in the insulating layer located in the recess.

A microelectronic device comprises a memory array region, a control logic region underlying the memory array region, and an interconnect region vertically interposed between the memory array region and the control logic region. The memory array region comprises a stack structure comprising vertically alternating conductive structures and insulating structures; vertically extending strings of memory cells within the stack structure; at least one source structure vertically overlying the stack structure and coupled to the vertically extending strings of memory cells; and digit line structures vertically underlying the stack structure and coupled to the vertically extending strings of memory cells. The control logic region comprises control logic devices for the vertically extending strings of memory cells. The interconnect region comprises structures coupling the digit line structures to the control logic devices. Methods of forming a microelectronic device, and memory devices and electronic systems are also described.

Various embodiments of the present disclosure are directed towards a semiconductor structure including a first through substrate via (TSV) within a substrate. The first TSV comprises a first doped region extending from a top surface of the substrate to a bottom surface of the substrate. A conductive via overlies the top surface of the substrate and is electrically coupled to the first TSV.

A semiconductor device including: a first silicon level including a first single crystal silicon layer and a plurality of first transistors; a first metal layer disposed over the first silicon level; a second metal layer disposed over the first metal layer; a third metal layer disposed over the second metal layer; a second level including a plurality of second transistors, the second level disposed over the third metal layer; a fourth metal layer disposed over the second level; a fifth metal layer disposed over the fourth metal layer, where the fourth metal layer is aligned to the first metal layer with a less than 40 nm alignment error; a via disposed through the second level, where each of the second transistors includes a metal gate, where a typical thickness of the second metal layer is greater than a typical thickness of the third metal layer by at least 50%.

Gallium nitride-based monolithic microwave integrated circuits (MMICs) can comprise aluminum-based metals. Electrical contacts for gates, sources, and drains of transistors can include aluminum-containing metallic materials. Additionally, connectors, inductors, and interconnect devices can also comprise aluminum-based metals. The gallium-based MMICs can be manufactured in complementary metal oxide semiconductor (CMOS) facilities with equipment that produces silicon-based semiconductor devices.

A circuit structure that includes a plurality of stacked conductor layers separated from each other by respective dielectric layers. The conductor layers may include a first set of conductor layers made of a first type conductor material and a second set of conductor layers made of a second type conductor material different from the first. A pair of conductor posts may traverse the stacked conductor layers. A first post may be electrically connected to the first set of conductor layers and electrically insulated from the second set of conductor layers. A second post electrically connected to the second set of conductor layers and electrically insulated from the first set of conductor layers.