A semiconductor device and method for fabricating the semiconductor device, which secure an overlay margin between the storage node and the storage node contact plug, as well as a processing margin, by excluding the connecting structure between the storage node and the storage node contact plug. A semiconductor device comprises a storage node contact hole provided between bit line structures, a first plug filling a lower portion of the storage node contact hole, a second plug protruding from the first plug, an insulation layer spacer covering a side wall of the second plug, and a storage node positioned at a higher level than the second plug and including an extension contacting another side wall of the second plug and a portion of a top surface of the first plug.

A semiconductor die is disclosed, including a plurality of transistors at a frontside of a semiconductor substrate, a backside inductor at a backside of the semiconductor substrate; and a frontside inductor at the frontside of the semiconductor substrate. The frontside inductor and the backside inductor are inductively coupled.

A method of gap filling a feature on a substrate decreases the feature-to-feature gap fill height variation by using a tungsten halide soak treatment. In some embodiments, the method may include heating a substrate to a temperature of approximately 350 degrees Celsius to approximately 450 degrees Celsius, exposing the substrate to a tungsten halide gas at a process pressure of approximately 5 Torr to approximately 25 Torr, soaking the substrate for a soak time of approximately 5 seconds to approximately 60 seconds with the tungsten halide gas, and performing a metal preclean process and a gap fill deposition on a plurality of features on the substrate after soaking of the substrate has completed.

A device includes: a first dielectric material; a first metal line in the first dielectric material; a second dielectric material disposed on the first dielectric material and the first metal line; a second metal line in the second dielectric material; and a plurality of metal vias disposed on a same level and connecting the first metal line and the second metal line, wherein the plurality of metal vias comprise a first top via and a bottom via having different sidewall profile angles.

A semiconductor device includes a plurality of middle interconnections and a plurality of middle plugs, which are disposed in an interlayer insulating layer and on a substrate. An upper insulating layer is disposed on the interlayer insulating layer. A first upper plug, a first upper interconnection, a second upper plug, and a second upper interconnection are disposed in the upper insulating layer. Each of the plurality of middle interconnections has a first thickness. The first upper interconnection has a second thickness that is greater than the first thickness. The second upper interconnection has a third thickness that is greater than the first thickness. The third thickness is twice to 100 times the first thickness. The second upper interconnection includes a material different from the second upper plug.

An IC package structure and an IC package unit are disclosed. The IC package includes an array of metal wall grids formed into a panel, each one of the metal wall grids having a continuous and closed metal wall to surround an IC package unit with at least one IC chip/IC die disposed therein. Each IC chip/IC die has a top surface with a plurality of metal pads formed thereon. A panel-shaped metal layer is formed on entire back side of the panel of the array of metal wall grids and bonded to the metal wall of each metal wall grid. A panel-shaped rewiring substrate having a plurality of metal pillars is connected to each IC chip/IC die with each one of the plurality of metal pillars soldered with a corresponding one of the plurality of metal pads.

An example apparatus includes a three-dimensional (3D) memory array including a sense line and a plurality of vertical stacks. Each respective on of the vertical stacks includes a different respective portion of the sense line, a first memory cell coupled to that portion of the sense line, a second memory cell coupled to that portion of the sense line, a first access line coupled to the first memory cell and a second access line coupled to the second memory cell. The first and second access lines are perpendicular to the sense line.

Some embodiments include a method of forming an integrated assembly. A first stack is formed over a conductive structure. The first stack includes a second layer between first and third layers. The first and third layers are conductive. A first opening is formed through the first stack. A sacrificial material is formed within the first opening. A second stack is formed over the first stack. The second stack has alternating first and second levels. A second opening is formed through the second stack and through the sacrificial material. First semiconductor material is formed within the second opening. A third opening is formed through the second stack, through the third layer, and to the second layer. The second layer is removed, forming a conduit. Second semiconductor material is formed within the conduit. Dopant is out-diffused from the second semiconductor material into the first semiconductor material. Some embodiments include integrated assemblies.

Interconnect structures and method of forming the same are disclosed herein. An exemplary interconnect structure includes a first contact feature in a first dielectric layer, a second dielectric layer over the first dielectric layer, a second contact feature over the first contact feature, a barrier layer between the second dielectric layer and the second contact feature, and a liner between the barrier layer and the second contact feature. An interface between the first contact feature and the second contact feature includes the liner but is free of the barrier layer.

A semiconductor device is provided, which includes a dielectric layer and a via structure. The dielectric layer is arranged over a substrate. The via structure is arranged in the dielectric layer, the via structure having a peripheral portion and a central portion. The peripheral portion of the via structure has a height that is greater than that of the central portion.