A highly flexible display device and a method for manufacturing the display device are provided. A transistor including a light-transmitting semiconductor film, a capacitor including a first electrode, a second electrode, and a dielectric film between the first electrode and the second electrode, and a first insulating film covering the semiconductor film are formed over a flexible substrate. The capacitor includes a region where the first electrode and the dielectric film are in contact with each other, and the first insulating film does not cover the region.

A 3D semiconductor device, the device including: a first level including a first single crystal layer, the first level including first transistors, where the first transistors each include a single crystal channel; first metal layers interconnecting at least the first transistors; a second metal layer overlaying the first metal layers; and a second level including a second single crystal layer, the second level including second transistors, where the second level overlays the first level, where the second transistors each include at least two side-gates, where the second level is bonded to the first level, and where the bonded includes oxide to oxide bonds.

A method for producing a 3D semiconductor device including: providing a first level including a first single crystal layer; forming peripheral circuitry in and/or on the first level, and includes first single crystal transistors; forming a first metal layer on top of the first level; forming a second metal layer on top of the first metal layer; forming second level disposed on top of the second metal layer; performing a first lithography step; forming a third level on top of the second level; performing a second lithography step; processing steps to form first memory cells within the second level and second memory cells within the third level, where the plurality of first memory cells include at least one second transistor, and the plurality of second memory cells include at least one third transistor; and deposit a gate electrode for second and third transistors simultaneously.

A 3D semiconductor device, the device comprising: a first level comprising a first single crystal layer, said first level comprising first transistors, wherein each of said first transistors comprises a single crystal channel; first metal layers interconnecting at least said first transistors; a second metal layer overlaying said first metal layers; and a second level comprising a second single crystal layer, said second level comprising second transistors, wherein said second level overlays said first level, wherein at least one of said second transistors comprises a gate all around structure, wherein said second level is directly bonded to said first level, and wherein said bonded comprises direct oxide to oxide bonds.

The present invention employs a polyimide film, which has a coefficient of thermal expansion (CTE) that is a negative number at a temperature equal to or greater than 350° C., as a debonding layer for separating a flexible substrate and a carrier substrate, and thus can easily separate a flexible substrate from a carrier substrate by using a detaching phenomenon caused by a difference in residual stress between the flexible substrate and the debonding layer after a high-temperature process for producing an element on the flexible substrate. Therefore, the present invention can separate the flexible substrate without causing chemical or physical damage to the element formed on the flexible substrate, thereby minimizing problems that may occur during a stripping process.

A carrier substrate to be used, when manufacturing a member for an electronic device on a surface of a substrate, by being bonded to the substrate, includes at least a first glass substrate. The first glass substrate has a compaction described below of 80 ppm or less. Compaction is a shrinkage in a case of subjecting the first glass substrate to a temperature raising from a room temperature at 100° C./hour and to a heat treatment at 600° C. for 80 minutes, and then to a cooling to the room temperature at 100° C./hour.

A lightweight flexible light-emitting device which is able to possess a curved display portion and display a full color image with high resolution and the manufacturing process thereof are disclosed. The light-emitting device comprises: a plastic substrate; an insulating layer with an adhesive interposed therebetween; a thin film transistor over the insulating layer; a protective insulating film over the thin film transistor; a color filter over the protective insulating film; an interlayer insulating film over the color filter; and a white-emissive light-emitting element formed over the interlayer insulating film and being electrically connected to the thin film transistor.

A semiconductor device includes a substrate, a gate all around (GAA) device overlying the substrate, and a thin film transistor (TFT) overlying the GAA device, and a passive device overlying the TFT. The substrate, the GAA device, the TFT, and the passive device is subsequently stacked on each other and at least partially overlap with each other. A via includes a first end, a second end, and a middle portion of the via that is located between the first end and the second end of the via. The first end of the via is connected to the passive device and the second end of the via is connected to one layer of the GAA device. The middle portion of the via is laterally spaced apart from the TFT and the passive device.

A flexible array substrate, a manufacturing method thereof and a display device are provided. The flexible array substrate includes: a first flexible substrate with a first surface; a thin film transistor on the first surface; and a light-shielding layer between the first flexible substrate and the thin film transistor. An orthographic projection of the light-shielding layer on the first flexible substrate covers an orthographic projection of a channel region of the thin film transistor on the first flexible substrate.

A display substrate includes a first display region and a second display region. The display substrate may include: a first base substrate; a second base substrate; a first barrier layer and a light emitting unit. The first base substrate includes a first through region penetrating the first base substrate, and the first barrier layer includes a second through region penetrating the first barrier layer. The second base substrate includes a first substrate sub-portion located in the first display region, the first substrate sub-portion penetrates the second through region, and at least a portion of the first substrate sub-portion is located in the first through region. The display substrate includes a recessed portion. The second base substrate includes a first surface located in the first display region and a second surface located in the second display region, and the first surface and the second surface are formed as a flat surface.