An active device substrate includes a substrate, a first active device, and a second active device. The first active device includes a first gate, a crystallized metal oxide layer, a first insulation layer, a first source, and a first drain. The crystallized metal oxide layer is located on the first gate. The first insulation layer is sandwiched between the crystallized metal oxide layer and the first gate. An area from the top surface of the crystallized metal oxide layer to the bottom surface of the crystallized metal oxide layer is observed via a selected area diffraction mode of a transmission electron microscope, and a diffraction pattern of a crystallized phase can be observed. The second active device includes a second gate, a silicon semiconductor layer, a second source, and a second drain. A manufacturing method of an active device substrate is further provided.

Provided are a thin-film transistor substrate that has enhanced electrical characteristics, such as off-current characteristics of a thin-film transistor, without increasing the number of mask processes, a display apparatus, and a method of manufacturing the thin-film transistor substrate. The thin-film transistor substrate includes: a semiconductor layer including a first conductive region, a second conductive region, and a first semiconductor region; a lower electrode disposed on the semiconductor layer and at least partially overlapping the first semiconductor region; and an upper electrode disposed on the lower electrode and at least partially overlapping the first semiconductor region, a first boundary between the first semiconductor region and the first conductive region coincides with an edge of the upper electrode, and a second boundary between the first semiconductor region and the second conductive region coincides with an edge of the lower electrode or an edge of the upper electrode.

A display device includes: a substrate; and a semiconductor layer disposed on the substrate, and including a first area, a second area, and a third area that are sequentially positioned by dividing the semiconductor layer into three areas in a thickness direction of the semiconductor layer, wherein the semiconductor layer includes polycrystalline silicon, a concentration of fluorine contained in the semiconductor layer has a first peak value in the first area and a second peak value in the third area, and the first peak value of the concentration of the fluorine in the semiconductor layer is about 30% or less of the second peak value of the concentration of the fluorine in the semiconductor layer.

A display device that is suitable for increasing in size is achieved. Three or more source lines are provided for each pixel column. Video signals having the same polarity are input to adjacent source lines during one frame period. Dot inversion driving is used to reduce a flicker, crosstalk, or the like.

A method of manufacturing a thin film transistor includes: removing an oxide film on a surface of an amorphous silicon layer by performing a surface cleaning; and forming an active layer by performing a heat treatment on the amorphous silicon layer, where the amorphous silicon layer is changed into crystalline silicon by the heat treatment.

A thin film transistor substrate includes: a substrate, a first electrode disposed on the substrate, a bank disposed on the substrate and having an inclined surface inclined at an angle with respect to the substrate, a second electrode disposed on the bank, an active pattern electrically connected to the first electrode and the second electrode, disposed on the inclined surface, and including a first conductive region and a second conductive region in which impurities are doped, and a channel region between the first conductive region and the second conductive region, and a gate electrode overlapping at least a portion of the channel region of the active pattern. The inclined surface extends in a first direction in a plan view. The first conductive region, the channel region, and the second conductive region are sequentially disposed on the inclined surface along a second direction that crosses the first direction.

A thin film transistor substrate, a display device, a method of manufacturing a thin film transistor substrate, and a method of manufacturing a display device, the thin film transistor substrate including a substrate; a first thin film transistor on the substrate, the first thin film transistor including a first active pattern, and a first gate electrode arranged to overlap at least a part of the first active pattern; and a second thin film transistor on the substrate, the second thin film transistor including a second active pattern that includes a plurality of protrusions on an upper surface thereof, and a second gate electrode arranged to overlap at least a part of the second active pattern.

The present disclosure provides a display substrate, a method for preparing the same, and a display device. The method for preparing the display substrate includes a step of preparing a pixel driving circuit on a substrate, the step specifically includes: preparing a first active layer of an oxide transistor on the substrate; preparing a barrier layer on a surface of the first active layer away from the substrate, an orthogonal projection of the barrier layer on the substrate covering an orthogonal projection of the first active layer on the substrate; preparing a low-temperature polysilicon transistor is on the substrate; and preparing a first gate insulating layer, a first gate electrode, a first input electrode, and a first output electrode of the oxide transistor on the substrate.

A display substrate, a preparation method and driving method therefor, and a display apparatus. The display substrate includes a substrate and a switch structure arranged on the substrate, the switch structure being electrically connected to a control signal terminal, a signal input terminal and a signal output terminal. The switch structure comprises a switching unit. The switching unit comprises a first transistor and a second transistor; and the types of the first transistor and the second transistor are opposite. The first transistor comprises: a first active layer, a first gate electrode, a first source electrode, and a first drain electrode. The second transistor comprises: a second active layer, a second gate electrode, a second source electrode, and a second drain electrode.

A display device includes: a substrate; and a semiconductor layer disposed on the substrate, and including a first area, a second area, and a third area that are sequentially positioned by dividing the semiconductor layer into three areas in a thickness direction of the semiconductor layer, wherein the semiconductor layer includes polycrystalline silicon, a concentration of fluorine contained in the semiconductor layer has a first peak value in the first area and a second peak value in the third area, and the first peak value of the concentration of the fluorine in the semiconductor layer is about 30% or less of the second peak value of the concentration of the fluorine in the semiconductor layer.