This disclosure relates to a synaptic component for a neural network having a layer of a semiconductor and a source electrode connected to the semiconducting layer and a drain electrode connected to the semiconducting layer, wherein the source electrode is spatially separated from the drain electrode, wherein the source electrode and the semiconducting layer form a Schottky diode, wherein the source electrode is separated from a first gate electrode by ferroelectric material. This disclosure further relates to a method for operating a synaptic component according to the disclosure in which the first Schottky diode is connected in reverse direction and an electric voltage is applied on the first gate electrode in a pulsed manner.

A two-terminal memory device including: a substrate; a source and a drain formed to face each other on an upper surface of the substrate; a ferroelectric layer connected to the source and the drain and formed between the source and the drain; and an extended drain extending from the drain and laminated on the ferroelectric layer. The two-terminal memory device may be applied as a cross-point type and neuromorphic device capable of implementing multi-resistance levels with multi-layer switchable resistance layers.

In a method of manufacturing a negative capacitance structure, a dielectric layer is formed over a substrate. A first metallic layer is formed over the dielectric layer. After the first metallic layer is formed, an annealing operation is performed, followed by a cooling operation. A second metallic layer is formed. After the cooling operation, the dielectric layer becomes a ferroelectric dielectric layer including an orthorhombic crystal phase. The first metallic film includes a oriented crystalline layer.

A semiconductor structure includes an active region including a source region, a drain region, and a channel region extending between the source region and the drain region, a gate stack, and a gate dielectric layer located between the gate stack and the active region. The gate stack includes an electrically conductive gate electrode and a single crystalline III-nitride ferroelectric plate located between the electrically conductive gate electrode and the gate dielectric layer, and an entirety of the single crystalline III-nitride ferroelectric plate is single crystalline.

A semiconductor structure includes an active region including a source region, a drain region, and a channel region extending between the source region and the drain region, a gate stack, and a gate dielectric layer located between the gate stack and the active region. The gate stack includes an electrically conductive gate electrode and a single crystalline III-nitride ferroelectric plate located between the electrically conductive gate electrode and the gate dielectric layer, and an entirety of the single crystalline III-nitride ferroelectric plate is single crystalline.

Provided are a logic switching device and a method of manufacturing the same. The logic switching device may include a domain switching layer adjacent to a gate electrode. The domain switching layer may include a ferroelectric material region and an anti-ferroelectric material region. The domain switching layer may be a non-memory element. The logic switching device may include a channel, a source and a drain both connected to the channel, the gate electrode arranged to face the channel, and the domain switching layer provided between the channel and the gate electrode.

An integrated circuit device includes a ferroelectric layer that is formed with chlorine-free precursors. This ferroelectric material may be of the composition HF.sub.xZr.sub.1-xO.sub.2. The ferroelectric layer may be used in a memory device such as a ferroelectric field effect transistor (FeFET). A ferroelectric layer formed with chlorine-free precursors has no chlorine residue. The absence of chlorine ameliorates time-dependent dielectric breakdown (TDDB) and Bias Temperature Instability (BTI).

The present disclosure relates a ferroelectric field-effect transistor (FeFET) device. The FeFET device includes a ferroelectric structure having a first side and a second side. A gate structure is disposed along the first side of the ferroelectric structure, and an oxide semiconductor is disposed along the second side of the ferroelectric structure. The oxide semiconductor has a first semiconductor type. A source region and a drain region are disposed on the oxide semiconductor. The gate structure is laterally between the source region and the drain region. A polarization enhancement structure is arranged on the oxide semiconductor between the source region and the drain region. The polarization enhancement structure includes a semiconductor material or an oxide semiconductor material having a second semiconductor type that is different than the first semiconductor type.

A semiconductor device includes a substrate, a fin protruding over the substrate, a gate structure over the fin, a bottom electrode over and electrically coupled to the gate structure, a ferroelectric layer around the bottom electrode, and a top electrode around the ferroelectric layer.

Disclosed herein are transistors with ferroelectric gates, and related methods and devices. For example, in some embodiments, a transistor may include a channel material, and a gate stack, and the gate stack may include a gate electrode material and a ferroelectric material between the gate electrode material and the channel material.