A method for producing a plated formed product includes: a step (1) of forming on a substrate of the substrate having a metal film a resin film of a photosensitive resin composition containing a sulfur-containing compound having at least one selected from a mercapto group, a sulfide bond, and a polysulfide bond; a step (2) of exposing the resin film; a step (3) of developing the exposed resin film to form a resist pattern film; a step (4) of performing plasma treatment of a substrate having the resist pattern film on the metal film with oxygen-containing gas; and a step (5) of performing, after the plasma treatment, plating treatment with the resist pattern film as a mold.

Techniques disclosed herein include methods for creating a directed self-assembly tunable neutral layer that works with multiple different block copolymer materials. Techniques herein can include depositing a neutral layer and then post-processing this neutral layer to tune its characteristics so that the neutral layer is compatible with a particular block copolymer scheme or schemes. Post-processing herein of such a neutral layer can modify a ratio of pi and sigma bonds in a given carbon film or other film to approximate a given self-assembly film that will be deposited on this neutral layer. Accordingly, a generic or single material can be used for a neutral layer and modified to match a given block copolymer to be deposited.

The present application provides a block copolymer and uses thereof. The block copolymer of the present application exhibits an excellent self-assembling property or phase separation property, can be provided with a variety of required functions without constraint and, especially, etching selectivity can be secured, making the block copolymer effectively applicable to such uses as pattern formation.

The present application provides a block copolymer and uses thereof. The block copolymer of the present application exhibits an excellent self-assembling property or phase separation property, can be provided with a variety of required functions without constraint and, especially, etching selectivity can be secured, making the block copolymer effectively applicable to such uses as pattern formation.

The present application provides a block copolymer and uses thereof. The block copolymer of the present application exhibits an excellent self-assembling property or phase separation property, and can be provided with a variety of required functions without constraint.

The present application relates to a monomer, a method for preparing a block copolymer, a block copolymer, and uses thereof. Each monomer of the present application exhibits an excellent self-assembling property and is capable of forming a block copolymer to which a variety of required functions are granted as necessary without constraint.

Provided are a cleaning composition for removing an organic material remaining on an organic layer and a method of forming a semiconductor device using the composition. The cleaning composition includes 0.01-5 wt %. hydroxide based on a total weight of the cleaning composition and deionized water.

A semiconductor device has a substrate including a plurality of conductive vias formed vertically and partially through the substrate. An encapsulant is deposited over a first surface of the substrate and around a peripheral region of the substrate. A portion of the encapsulant around the peripheral region is removed by a cutting or laser operation to form a notch extending laterally through the encapsulant to a second surface of the substrate opposite the first surface of the substrate. A first portion of the substrate outside the notch is removed by chemical mechanical polishing to expose the conductive vias. A second portion of the substrate is removed by backgrinding prior to or after forming the notch. The encapsulant is coplanar with the substrate after revealing the conductive vias. The absence of an encapsulant/base material interface and coplanarity of the molded substrate results in less over-etching or under-etching and fewer defects.

An organic film composition including a compound represented by the following general formula (1), ##STR00001## wherein n1 and n2 each independently represent 0 or 1; “W” represents a single bond or any of structures represented by the following formula (2); R.sub.1 represents any of structures represented by the following general formula (3); m1 and m2 each independently represent an integer of 0 to 7, with the proviso that m1+m2 is 1 to 14. ##STR00002##
There can be provided an organic film composition for forming an organic film having dry etching resistance as well as advanced filling/planarizing characteristics.

[Problem]

To provide such a composition for producing a sacrifice layer as has excellent properties in both heat resistance and storage stability, and also to provide a process for producing a semiconductor device using the composition.

[Solution]

Disclosed is a composition for producing a sacrifice layer. The composition comprises a solvent and a polymer having a repeating unit containing a nitrogen atom with a lone pair, and contains particular transition metals only in a very low content. Also disclosed is a process using the composition as a sacrificial material for producing a semiconductor device comprising a porous material.