A method includes bonding a die to a substrate, where the substrate has a first redistribution structure, the die has a second redistribution structure, and the first redistribution structure is bonded to the second redistribution structure. A first isolation material is formed over the substrate and around the die. A first conductive via is formed, extending from a first surface of the substrate, where the first surface is opposite the second redistribution structure, the first conductive via contacting a first conductive element in the second redistribution structure. Forming the first conductive via includes patterning an opening in the substrate, extending the opening to expose the first conductive element, where extending the opening includes using a portion of a second conductive element in the first redistribution structure as an etch mask, and filling the opening with a conductive material.

A method is provided for fabricating a semiconductor structure. The method includes providing a semiconductor substrate; forming an initial metal layer; simultaneously forming a plurality of discrete first metal layers and openings by etching the initial metal layer; forming a plurality of sidewalls covering the side surface of the first metal layers; and forming a plurality of second metal layers to fill the openings.

A method for manufacturing a semiconductor device includes forming a trench in at least one dielectric layer; and forming an interconnect structure in the trench, wherein forming the interconnect structure includes forming a first conductive layer on a bottom surface of the trench, and partially filling the trench, and forming a second conductive layer on the first conductive layer, and filling a remaining portion of the trench, wherein the second conductive layer comprises a different material from the first conductive layer, and wherein an amount of the first conductive layer in the trench is controlled so that an aspect ratio of the second conductive layer has a value that is determined to result in columnar grain boundaries in the second conductive layer.

Disclosed herein is a semiconductor device, including: a first substrate including a first electrode, and a first insulating film configured from a diffusion preventing material for the first electrode and covering a periphery of the first electrode, the first electrode and the first insulating film cooperating with each other to configure a bonding face; and a second substrate bonded to and provided on the first substrate and including a second electrode joined to the first electrode, and a second insulating film configured from a diffusion preventing material for the second electrode and covering a periphery of the second electrode, the second electrode and the second insulating film cooperating with each other to configure a bonding face to the first substrate.

To provide a miniaturized semiconductor device with low power consumption. A method for manufacturing a wiring layer includes the following steps: forming a second insulator over a first insulator; forming a third insulator over the second insulator; forming an opening in the third insulator so that it reaches the second insulator; forming a first conductor over the third insulator and in the opening; forming a second conductor over the first conductor; and after forming the second conductor, performing polishing treatment to remove portions of the first and second conductors above a top surface of the third insulator. An end of the first conductor is at a level lower than or equal to the top level of the opening. The top surface of the second conductor is at a level lower than or equal to that of the end of the first conductor.

A substrate is described with a thermal dissipation structure sintered to thermal vias. In one example, a microelectronic module includes a recess between first and second substrate surfaces. One or more thermal vias extend between the first substrate surface and the interior recess surface, wherein each of the thermal vias has an interior end exposed at the interior recess surface. A sintered metal layer is in the recess and in physical contact with the interior end of the thermal vias and a thermal dissipation structure is in the recess over the sintered metal layer. The thermal dissipation structure is attached to the substrate within the recess by the sintered metal layer, and the thermal dissipation structure is thermally coupled to the thermal vias through the sintered metal layer.

Provided is a nonvolatile memory device. The nonvolatile memory device includes a conductive plate, a barrier conductive film extending along a surface of the conductive plate, a mold structure including a plurality of gate electrodes sequentially stacked on the barrier conductive film, a channel hole penetrating the mold structure to expose the barrier conductive film, an impurity pattern being in contact with the barrier conductive film, and formed in the channel hole, and a semiconductor pattern formed in the channel hole, extending from the impurity pattern along a side surface of the channel hole, and intersecting the plurality of gate electrodes.

A cavity may be formed in a dielectric material layer overlying a substrate. A layer stack including a metallic barrier liner, a metallic fill material layer, and a metallic capping material may be deposited in the cavity and over the dielectric material layer. Portions of the layer stack located above a horizontal plane including a top surface of the dielectric material layer may be removed. A contiguous set of remaining material portions of the layer stack includes a metal interconnect structure that is free of a pitted surface.

The invention provides a semiconductor bonding structure, the semiconductor bonding structure includes a first chip and a second chip which are bonded with each other, the first chip has a first bonding pad and the second bonding pad contacted and electrically connected to each other on a bonding interface, the first bonding pad and the second bonding pad are made of copper, and a heterogeneous contact combination in the first chip, the heterogeneous contact combination comprises a contact stack structure of a copper element, a tungsten element and an aluminum element, the tungsten element is located between the copper element and the aluminum element

A semiconductor structure includes a semiconductor fin protruding from a substrate; a gate structure engaging with the semiconductor fin. The semiconductor structure also includes an interlayer dielectric (ILD) layer disposed over the substrate and adjacent to the gate structure, where a top surface of the gate structure is below a top surface of the ILD layer; a first metal layer in direct contact with a top surface of the gate structure; a second metal layer disposed over the first metal layer, where the first metal layer is disposed on bottom and sidewall surfaces of the second metal layer, where the bottom surface of the second metal layer has a concave profile, and where the second metal layer differs from the first metal layer in composition; and a gate contact disposed over the second metal layer.