A copper interconnect with an embedded dielectric cap between lines comprises a plurality of interconnect lines formed in a dielectric layer of a semiconductor device. The copper interconnect further comprises a first dielectric cap formed between each interconnect line of the plurality of interconnect lines. The copper interconnect further comprises a second dielectric cap formed on top of the plurality of interconnect lines and the first dielectric cap, wherein the second dielectric cap formed on top of the first dielectric cap forms a bi-layer dielectric cap between the plurality of interconnect lines.

Implementations of semiconductor packages may include a die having a first side and a second side opposite the first side, a first metal layer coupled to the first side of the die, a tin layer coupled to the first metal layer, the first metal layer between the die and the tin layer, a backside metal layer coupled to the second side of the die, and a mold compound coupled to the die. The mold compound may cover a plurality of sidewalls of the first metal layer and a plurality of sidewalls of the tin layer and a surface of the mold compound is coplanar with a surface of the tin layer.

The present disclosure provides a semiconductor device structure with conductive plugs of different aspect ratios and manganese-containing lining layer and a method for preparing the same. The semiconductor device structure includes a substrate having a pattern-dense region and a pattern-loose region; a first conductive layer disposed over the substrate; a first dielectric layer disposed over the first conductive layer; a first conductive plug and a second conductive plug disposed in the first dielectric layer; wherein the first conductive plug and the second conductive plug comprises copper (Cu) and are separated from the first dielectric layer by the a first lining layer comprising manganese (Mn); wherein the first conductive plug and the second conductive plug have different aspect ratios.

At least one opening having a biconvex shape is formed into a dielectric material layer. A void-free metallization region (interconnect metallic region and/or metallic contact region) is provided to each of the openings. The void-free metallization region has the biconvex shape and exhibits a low wire resistance.

A method of fabricating a semiconductor integrated circuit (IC) is disclosed. The method includes providing a substrate. A patterned dielectric layer with a plurality of openings is formed on the substrate. A barrier layer is deposited in the openings by a first tool and a sacrificing protection layer is deposited on the barrier layer by the first tool. The sacrificing layer is removed and a metal layer is deposited on the barrier layer by a second tool.

A method of manufacturing a semiconductor device may include: forming an opening in a dielectric layer, the opening exposing a non-conductive layer disposed over a semiconductor substrate; forming a self-assembled monolayer (SAM) within the opening and over the non-conductive layer; forming a catalytic layer within the opening and over the SAM; filling the opening having the SAM and the catalytic layer with a conductive material to form a plug; and forming a barrier layer on sidewalls of the plug.

A semiconductor device includes providing a workpiece including an insulating material layer disposed thereon. The insulating material layer includes a trench formed therein. A barrier layer on the sidewalls of the trench is formed using a surface modification process and a surface treatment process.

An electronic apparatus is provided. The electronic apparatus includes an integrated fan-out package, a dielectric housing, and a plurality of conductive patterns. The dielectric housing is covering the integrated fan-out package, wherein a gap or a first dielectric layer is in between the dielectric housing and the integrated fan-out package. The plurality of conductive patterns is located on a surface of the dielectric housing, wherein the plurality of conductive patterns is located in between the dielectric housing and the integrated fan-out package.

The present disclosure provides a semiconductor device structure with a manganese-containing conductive plug and a method for forming the semiconductor device structure. The semiconductor device structure includes a first conductive layer disposed over a semiconductor substrate, and a dielectric layer disposed over the first conductive layer. The semiconductor device structure also includes a first conductive plug penetrating through the dielectric layer and in a pattern-dense region, and a lining layer covering the dielectric layer and the first conductive plug. The lining layer and the first conductive plug include manganese. The semiconductor device structure further includes a second conductive plug penetrating through the lining layer and the dielectric layer and in a pattern-loose region. The second conductive plug is separated from the dielectric layer by a portion of the lining layer. In addition, the semiconductor device structure includes a second conductive layer covering the lining layer and the second conductive plug.

A semiconductor device is proposed. The semiconductor device includes a wiring metal layer structure. The semiconductor device further includes a dielectric layer structure arranged directly on the wiring metal layer structure. The semiconductor device further includes a bonding pad metal layer structure arranged, at least partly, directly on the dielectric layer structure. A layer thickness of the dielectric layer structure ranges from 1% to 30% of a layer thickness of the wiring metal layer structure. The wiring metal layer structure and the bonding pad metal structure are electrically connected through openings in the dielectric layer structure.