A semiconductor device for high power application in which a novel semiconductor material having high mass productivity is provided. An oxide semiconductor film is formed, and then, first heat treatment is performed on the exposed oxide semiconductor film in order to reduce impurities such as moisture or hydrogen in the oxide semiconductor film. Next, in order to further reduce impurities such as moisture or hydrogen in the oxide semiconductor film, oxygen is added to the oxide semiconductor film by an ion implantation method, an ion doping method, or the like, and after that, second heat treatment is performed on the exposed oxide semiconductor film.

The present invention provides a manufacture method of a TFT substrate structure and a TFT substrate structure. In the manufacture method of the TFT substrate structure, as manufacturing the gate, a plurality of metal sections distributed in spaces are formed at two sides of the gate, and the gate and the plurality of metal sections are employed to be a mask to implement ion implantation to the polysilicon layer. In the TFT substrate structure according to the present invention, the undoped areas are formed among the n-type heavy doping areas while forming the n-type heavy doping areas at the polysilicon layer.

An object is, in a thin film transistor in which an oxide semiconductor is used as an active layer, to prevent change in composition, film quality, an interface, or the like of an oxide semiconductor region serving as an active layer, and to stabilize electrical characteristics of the thin film transistor. In a thin film transistor in which a first oxide semiconductor region is used as an active layer, a second oxide semiconductor region having lower electrical conductivity than the first oxide semiconductor region is formed between the first oxide semiconductor region and a protective insulating layer for the thin film transistor, whereby the second oxide semiconductor region serves as a protective layer for the first oxide semiconductor region; thus, change in composition or deterioration in film quality of the first oxide semiconductor region can be prevented, and electrical characteristics of the thin film transistor can be stabilized.

A semiconductor device for high power application in which a novel semiconductor material having high mass productivity is provided. An oxide semiconductor film is formed, and then, first heat treatment is performed on the exposed oxide semiconductor film in order to reduce impurities such as moisture or hydrogen in the oxide semiconductor film. Next, in order to further reduce impurities such as moisture or hydrogen in the oxide semiconductor film, oxygen is added to the oxide semiconductor film by an ion implantation method, an ion doping method, or the like, and after that, second heat treatment is performed on the exposed oxide semiconductor film.

The present invention relates to an array substrate, a method for manufacturing the same and a display device. The array substrate comprises a substrate, and a first region and a second region that are provided on the substrate and adjacent to each other and a difference in level between the two exceeds a threshold, a difference-in-level compensation pattern is provided on the substrate, which overlaps with both the first region and the second region in a direction perpendicular to the substrate and does not exceed the first region and the second region. By the technical solution of the present invention, the difference in level between the data line and an adjacent region on the array substrate is reduced, so that during a rubbing process, the rubbing area of a polyimide solution is increased, and the risk of light leakage is reduced without a decrease of the pixel aperture ratio.

There is disclosed a method for chemically treating a display glass substrate by treating at least one surface of the glass substrate with a heated solution containing HCl to form a depletion layer at the surface and under the surface of the glass substrate. The disclosure also relates to display glass substrates containing the depletion layer made by the disclosed process. In addition, the disclosure relates to methods of making thin-film transistors (“TFTs”) on these display glass substrates by depositing a Si layer directly on the chemically treated surface of the glass substrate, and annealing the Si layer to form polycrystalline silicon.

A semiconductor device with a structure in which an increase in the number of oxygen vacancies in an oxide semiconductor layer can be suppressed and a method for manufacturing the semiconductor device are provided. The semiconductor device includes an oxide insulating layer; intermediate layers apart from each other over the oxide insulating layer; a source electrode layer and a drain electrode layer over the intermediate layers; an oxide semiconductor layer that is electrically connected to the source electrode layer and the drain electrode layer and is in contact with the oxide insulating layer; a gate insulating film over the source electrode layer, the drain electrode layer, and the oxide semiconductor layer; and a gate electrode layer that is over the gate insulating film and overlaps with the source electrode layer, the drain electrode layer, and the oxide semiconductor layer.

A thin film transistor array panel includes a substrate; a data line disposed on the substrate; a buffer layer disposed on the substrate and spaced apart from the data line in a plan view; a thin film transistor disposed on the buffer layer, the thin film transistor including an oxide semiconductor layer; and a pixel electrode connected to the thin film transistor.

The present invention provides a thin film transistor and a manufacturing method thereof, an array substrate and a display device. The thin film transistor comprises a gate electrode, an active layer, an etch stop layer, a source electrode and a drain electrode. The etch stop layer is provided between the active layer and the source and drain electrodes, a first via hole and a second via hole are formed in the etch stop layer, the source electrode is connected with the active layer through the first via hole, the drain electrode is connected with the active layer through the second via hole, and the gate electrode is overlapped with a part of the first via hole and a part of the second via hole respectively and is overlapped with a portion between the first via hole and the second via hole.

A semiconductor device using oxide semiconductor with favorable electrical characteristics, or a highly reliable semiconductor device is provided. A semiconductor device is manufactured by: forming an oxide semiconductor layer over an insulating surface; forming source and drain electrodes over the oxide semiconductor layer; forming an insulating film and a conductive film in this order over the oxide semiconductor layer and the source and drain electrodes; etching part of the conductive film and insulating film to form a gate electrode and a gate insulating layer, and etching part of the upper portions of the source and drain electrodes to form a first covering layer containing a constituent element of the source and drain electrodes and in contact with the side surface of the gate insulating layer; oxidizing the first covering layer to form a second covering layer; and forming a protective insulating layer containing an oxide over the second covering layer.