A display panel and a display device are provided. The display panel includes a substrate, a driving unit including a first transistor, and at least one light-emitting element. The first transistor includes a first source electrode and a first drain electrode that are located at a side of the at least one light-emitting element close to the substrate. Each of the at least one light-emitting element includes a first electrode, a light-emitting layer, and a second electrode that are sequentially stacked. The first electrode is connected to the first drain electrode through a first via, and the first drain electrode is located at a side of the first source electrode close to the substrate. A material of the first drain electrode is different from a material of the first source electrode.

A display panel includes a first transistor including a first semiconductor pattern including one of a silicon semiconductor and an oxide semiconductor and a first gate electrode overlapping the first semiconductor pattern in a plan view, a second transistor including a second semiconductor pattern different from the first semiconductor pattern and a second gate electrode overlapping the second semiconductor pattern in the plan view, a first upper electrode overlapping the first gate electrode in the plan view, a first connection electrode electrically connected to the first semiconductor pattern via a first contact hole through at least one insulating layer, and a light emitting element disposed on the first connection electrode. A single insulating layer is disposed between the light emitting element and the first connection electrode, and the first connection electrode is electrically connected to the light emitting element via a second contact hole through the single insulating layer.

Occurrence of short-channel characteristics and parasitic capacitance of a MOSFET on a SOI substrate is prevented. A sidewall having a stacked structure obtained by sequentially stacking a silicon oxide film and a nitride film is formed on a side wall of a gate electrode on the SOI substrate. Subsequently, after an epitaxial layer is formed beside the gate electrode, and then, the nitride film is removed. Then, an impurity is implanted into an upper surface of the semiconductor substrate with using the gate electrode and the epitaxial layer as a mask, so that a halo region is formed in only a region of the upper surface of the semiconductor substrate which is right below a vicinity of both ends of the gate electrode.

Nanowire structures having non-discrete source and drain regions are described. For example, a semiconductor device includes a plurality of vertically stacked nanowires disposed above a substrate. Each of the nanowires includes a discrete channel region disposed in the nanowire. A gate electrode stack surrounds the plurality of vertically stacked nanowires. A pair of non-discrete source and drain regions is disposed on either side of, and adjoining, the discrete channel regions of the plurality of vertically stacked nanowires.

A display device includes: a substrate; a display area including pixels arranged on the substrate; a first area disposed at one side of the display area; a second area including pads arranged on the substrate; a bending area disposed between the first area and the second area; and a fan-out line disposed in the first area, the bending area, and the second area. The fan-out line includes: a plurality of sub-routing lines arranged in the first area and electrically connected to each other; and a plurality of sub-pad lines arranged in the second area and electrically connected to each other. The number of the plurality of sub-routing lines is greater than the number of the plurality of sub-pad lines.

Integrated circuit structures having partitioned source or drain contact structures, and methods of fabricating integrated circuit structures having partitioned source or drain contact structures, are described. For example, an integrated circuit structure includes a fin. A gate stack is over the fin. A first epitaxial source or drain structure is at a first end of the fin. A second epitaxial source or drain structure is at a second end of the fin. A conductive contact structure is coupled to one of the first or the second epitaxial source or drain structures. The conductive contact structure has a first portion partitioned from a second portion.

A display apparatus is provided including a display area and a non-display area. The display area includes a display element and the non-display area includes a pad portion. A first thin-film transistor (TFT) is arranged in the display area. The first TFT includes silicon and a first gate electrode. A second TFT is arranged on a first insulating layer covering the first gate electrode and includes an oxide and a second gate electrode. A first voltage line extends in a first direction. A data line is spaced apart from the first voltage line. A connection wire is disposed in the display area and connects the data line to the pad portion. The connection wire includes a first portion extending in the first direction and a second portion extending in a second direction crossing the first direction, and the first portion overlaps the first voltage line.

A display may have an array of pixels each of which has a light-emitting diode such as an organic light-emitting diode. A drive transistor and an emission transistor may be coupled in series with the light-emitting diode of each pixel between a positive power supply and a ground power supply. The pixels may include first and second switching transistors. A data storage capacitor may be coupled between a gate and source of the drive transistor in each pixel. Signal lines may be provided in columns of pixels to route signals such as data signals, sensed drive currents from the drive transistors, and predetermined voltages between display driver circuitry and the pixels. The switching transistors, emission transistors, and drive transistors may include semiconducting-oxide transistors and silicon transistors and may be n-channel transistors or p-channel transistors.

Integrated circuit structures having partitioned source or drain contact structures, and methods of fabricating integrated circuit structures having partitioned source or drain contact structures, are described. For example, an integrated circuit structure includes a fin. A gate stack is over the fin. A first epitaxial source or drain structure is at a first end of the fin. A second epitaxial source or drain structure is at a second end of the fin. A conductive contact structure is coupled to one of the first or the second epitaxial source or drain structures. The conductive contact structure has a first portion partitioned from a second portion.

A display may have an array of pixels each of which has a light-emitting diode such as an organic light-emitting diode. A drive transistor and an emission transistor may be coupled in series with the light-emitting diode of each pixel between a positive power supply and a ground power supply. The pixels may include first and second switching transistors. A data storage capacitor may be coupled between a gate and source of the drive transistor in each pixel. Signal lines may be provided in columns of pixels to route signals such as data signals, sensed drive currents from the drive transistors, and predetermined voltages between display driver circuitry and the pixels. The switching transistors, emission transistors, and drive transistors may include semiconducting-oxide transistors and silicon transistors and may be n-channel transistors or p-channel transistors.