A display device includes a substrate, a plurality of electrode pads including a first electrode pad and a common electrode pad on the substrate, a light emitting element including a first contact electrode on the first electrode pad and a second contact electrode on the common electrode pad, a conductive adhesive member including a plurality of conductive balls connecting the first electrode pad and the first contact electrode and connecting the common electrode pad and the second contact electrode, and a plurality of protrusions on the substrate and protruding in a thickness direction of the substrate. First protrusions from among the plurality of protrusions overlap the electrode pads in the thickness direction of the substrate.

A Non Conductive Film (NCF) at least includes a first film layer and a second film layer. A surface of the first film layer is provided with a grid-shaped groove structure, and a depth of each groove of the groove structure is less than a thickness of the first film layer. The second film layer is located in the groove in the surface of the first film layer. The fluidity of the first film layer is greater than the fluidity of the second film layer under the same condition.

A semiconductor chip stack includes first and second semiconductor chips. The first chip includes a first semiconductor substrate having an active surface and an inactive surface, a first insulating layer formed on the inactive surface, and first pads formed in the first insulating layer. The second semiconductor chip includes a second semiconductor substrate having an active surface and an inactive surface, a second insulating layer formed on the active surface, second pads formed in the second insulating layer, a polymer layer formed on the second insulating layer, UBM patterns buried in the polymer layer; and buried solders formed on the UBM patterns, respectively, and buried in the polymer layer. A lower surface of the buried solders is coplanar with that of the polymer layer, the buried solders contact the first pads, respectively, at a contact surface, and a cross-sectional area of the buried solders is greatest on the contact surface.

The present invention provides a display device comprising: a substrate; a wiring electrode disposed on the substrate; a plurality of semiconductor light emitting elements each provided with a conductive electrode electrically connected to the wiring electrode; and an anisotropic conductive layer which is disposed between the conductive electrodes and the wiring electrode and formed of a mixture of conductive particles and an insulating material, wherein the conductive electrodes are provided with a protrusion part protruding toward the wiring electrode.

A semiconductor device includes a semiconductor element, a mount portion, and a sintered metal bond. The semiconductor element includes a body and an electrode pad. The body has an obverse surface facing forward in a first direction and a reverse surface facing rearward in the first direction. The electrode pad covers the element reverse surface. The mount portion supports the semiconductor element. The sintered metal bond electrically bonds the electrode pad and the mount portion. The sintered metal bond includes a first rear edge and a first front edge spaced forward in the first direction from the first rear edge. The electrode pad includes a second rear edge and a second front edge spaced forward in the first direction from the second rear edge. The first front edge of the metal bond is spaced rearward in the first direction from the second front edge of the pad.

A semiconductor device includes a semiconductor element, a mount portion, and a sintered metal bond. The semiconductor element includes a body and an electrode pad. The body has an obverse surface facing forward in a first direction and a reverse surface facing rearward in the first direction. The electrode pad covers the element reverse surface. The mount portion supports the semiconductor element. The sintered metal bond electrically bonds the electrode pad and the mount portion. The sintered metal bond includes a first rear edge and a first front edge spaced forward in the first direction from the first rear edge. The electrode pad includes a second rear edge and a second front edge spaced forward in the first direction from the second rear edge. The first front edge of the metal bond is spaced rearward in the first direction from the second front edge of the pad.

A method for manufacturing a light-emitting device includes: providing an intermediate body having a first ultraviolet transmitting layer, a first adhesive layer, a plurality of first light emitting elements, a second adhesive layer, and a second ultraviolet transmitting layer; disposing on the second ultraviolet transmitting layer of the intermediate body, an ultraviolet shielding layer in a region corresponding to a part of the first light-emitting elements; performing first ultraviolet irradiation of irradiating the intermediate body with ultraviolet from a direction facing the ultraviolet shielding layer; performing second ultraviolet irradiation of irradiating the intermediate body with ultraviolet from a direction facing the first ultraviolet transmitting layer; and separating the part of the first light-emitting elements from the first adhesive layer along with the second adhesive layer.

A package structure and method of manufacturing is provided, whereby a bonding dielectric material layer is provided at a back side of a wafer, a bonding dielectric material layer is provided at a front side of an adjoining wafer, and wherein the bonding dielectric material layers are fusion bonded to each other.

Provided is a die stack structure including a first die and a second die. The first die and the second die are bonded together through a hybrid bonding structure. At least one of a first test pad of the first die or a second test pad of the second die has a protrusion of the at least one of the first test pad or the second test pad, and a bonding insulating layer of the hybrid bonding structure covers and contacts with the protrusion, so that the first test pad and the second test pad are electrically isolated from each other.

A quantum device (100) includes: an interposer (112); a quantum chip (111); a first connection part (130) that is provided between the interposer (112) and the quantum chip (111) and electrically connects a wiring layer of the interposer (112) to a wiring layer of the quantum chip (111); a predetermined signal line (w1) arranged in the wiring layer of the quantum chip (111); first shield wires (ws1) arranged in the wiring layer of the quantum chip (111) along the predetermined signal line (w1); a second shield wire (ws2) arranged in the wiring layer of the interposer (112); and a second connection part (150) that is provided between the interposer (112) and the quantum chip (111) so as to contact the first shield wires (ws1) and the second shield wire (ws2).