In a general aspect, a package includes an optical sensor die fabricated in a semiconductor wafer. The optical sensor die has an optically active area on a front side of the semiconductor wafer generating a raw image signal. A transparent cover attached to the front side of the semiconductor wafer above the optically active area of the optical sensor die. An image signal processor (ISP) die processing the raw image signal is embedded in a layer of molding material attached to a back side the semiconductor wafer opposite the front side of the semiconductor wafer.

Disclosed are a micro light emitting diode display panel, a manufacturing method thereof and a display device. The embodiment micro light emitting diode display panel includes a first metal layer and a second metal layer; the first metal layer includes a source electrode, a drain electrode and a power line; the second metal layer includes a first bonding electrode and a second bonding electrode, and the first bonding electrode is electrically connected to the source electrode through the first via hole, and the second bonding electrode is electrically connected to the power line through the second via hole; the first via hole and the second via hole are both provided with a supporting column.

A bonding material that contains first particles containing a first metal, second particles containing a second metal having a melting point lower than that of the first metal, and filling resin is supplied on one of a semiconductor element or a conductor member, and a gap is formed in a surface of the supplied bonding material. The other of the conductor member or the semiconductor element is mounted on and pressed against the bonding material in which the gap is formed, and the filling resin unevenly distributed on the surface of the bonding material is moved to the gap.

A semiconductor package includes: a package substrate; a semiconductor chip disposed on the package substrate; a transparent substrate disposed on the semiconductor chip; and an adhesive layer that is disposed between the semiconductor chip and the transparent substrate. The adhesive layer is configured to block light. The transparent substrate includes: a first lower side that faces the semiconductor chip, a second lower side that faces the semiconductor chip and that is disposed above the first lower side, and a first inner side wall that connects the first lower side and the second lower side, and the adhesive layer is in contact with the second lower side and the first inner side wall.

A power semiconductor element and a support member are stacked with an intermediate structure being interposed between the power semiconductor element and the support member. The intermediate structure includes a first metal paste layer and at least one first penetrating member. The first metal paste layer contains a plurality of first metal particles. The at least one first penetrating member penetrates the first metal paste layer. At least one first vibrator attached to the at least one first penetrating member penetrating the first metal paste layer is vibrated. The first metal paste layer is heated so that the plurality of first metal particles are sintered or fused.

A power semiconductor element and a support member are stacked with an intermediate structure being interposed between the power semiconductor element and the support member. The intermediate structure includes a first metal paste layer and at least one first penetrating member. The first metal paste layer contains a plurality of first metal particles. The at least one first penetrating member penetrates the first metal paste layer. At least one first vibrator attached to the at least one first penetrating member penetrating the first metal paste layer is vibrated. The first metal paste layer is heated so that the plurality of first metal particles are sintered or fused.

A method of manufacturing a display device according to an embodiment of the present invention includes: placing a component via an adhesive material on one side of a base material containing a resin and having display area; stacking a protective film via a pressure-sensitive adhesive layer on the other side of the base material; and mounting the component on the base material by sandwiching and pressurizing the base material and the component using a pair of heads. An exposed portion in which no protective film is stacked is formed on the other side of the base material and is provided in correspondence with an area in which the component is provided, and one of the pair of heads has a contact portion, and the contact portion is housed within the exposed portion of the base material and the contact portion is brought into direct contact with the base material.

According to an embodiment, a semiconductor device includes a silicon substrate, a semiconductor layer, and a lower layer. The semiconductor layer is formed on an upper surface of the silicon substrate. The lower layer is formed on a lower surface of the silicon substrate and has a side surface connecting to a side surface of the silicon substrate. At least a pair of side surfaces of the semiconductor device has a curved shape widening from an upper side toward a lower side.

A cooling bond layer for a power electronics assembly is provided. The cooling bond layer includes a first end, a second end spaced apart from the first end, a metal matrix extending between the first end and the second end, and a plurality of micro-channels extending through the metal matrix from the first end to the second end. The plurality of micro-channels are configured for a cooling fluid to flow through and remove heat from the cooling bond layer. In some embodiments, the plurality of micro-channels are cylindrical shaped micro-channels. In such embodiments, the plurality of micro-channels may have a generally constant average inner diameter along a thickness of the cooling bond layer. In the alternative, the plurality of micro-channels may have a graded average inner diameter along a thickness of the cooling bond layer. In other embodiments, the plurality of micro-channels may have a wire mesh layered structure.

Disclosed are a micro light emitting diode display panel, a manufacturing method thereof and a display device. The embodiment micro light emitting diode display panel includes a first metal layer and a second metal layer; the first metal layer includes a source electrode, a drain electrode and a power line; the second metal layer includes a first bonding electrode and a second bonding electrode, and the first bonding electrode is electrically connected to the source electrode through the first via hole, and the second bonding electrode is electrically connected to the power line through the second via hole; the first via hole and the second via hole are both provided with a supporting column.