A packaging structure having an organic interposer layer and a method for manufacturing the same are provided; the method comprises: forming a rewiring layer having metal wiring layers and inorganic dielectric layers over a semiconductor substrate; forming conductive pillars over the rewiring layer, and electrically connected to the rewiring layer; forming an organic dielectric layer over the rewiring layer, forming solder bumps over a thinned organic dielectric layer and thinned conductive pillars; bonding a support substrate to the solder bumps through an adhesive layer; removing the semiconductor substrate; forming bonding pads on an exposed surface of the metal wiring layers; connecting a cutting carrier to the bonding pads, and disengaging the support substrate by removing the adhesive layer. Interconnection between upper and lower layers is achieved by introducing the conductive pillars in the organic dielectric layer, without the need for complex processes such as forming through-silicon vias.

A semiconductor device includes a semiconductor substrate; at least one first transistor, each first transistor including a mesa structure including one or more semiconductor layers; a first bump overlapping the first transistors and extending in a first direction; and a second bump. The mesa structure includes a first end portion at one end in a second direction and a second end portion at another end in the second direction. In plan view, an outer periphery of the first bump includes a first side and a second side extending in the first direction and arranged next to each other in the second direction. The first side is closer to the second bump than the second side in the second direction. The first end portion and the second end portion of the mesa structure are between the first side and the second side.

A socket for testing a semiconductor package includes a body having an internal space configured to accommodate a semiconductor package; and at least a first spacer on the body and positioned to contact a first surface of the semiconductor package when the semiconductor package is placed on the body. The body includes a lower socket portion provided with through-holes, configured through which to receive meter reading pins that contact external connection terminals of the semiconductor package, and an upper socket portion disposed above the lower socket portion, and the first spacer is disposed on a surface of the lower socket portion that faces the first surface of the semiconductor package when the semiconductor package is placed on the body.

A joined body includes a first substrate, a second substrate which faces the first substrate, and a joining film which joins the first substrate to the second substrate, wherein the joining film has a first region and a second region, and in a plan view of the first substrate, the first region has a higher metal nanoparticle density than the second region.

Implementations of semiconductor packages may include: a semiconductor wafer, a glass lid fixedly coupled to a first side of the semiconductor die by an adhesive, a redistribution layer coupled to a second side of the semiconductor die, and a plurality of ball mounts coupled to the redistribution layer on a side of the redistribution layer coupled to the semiconductor die. The adhesive may be located in a trench around a perimeter of the semiconductor die and located in a corresponding trench around a perimeter of the glass lid.

A substrate having a die attach area for receiving a semiconductor die includes a recessed area for receiving die attach adhesive. The recessed area prevents die attach adhesive from bleeding into the surrounding area and onto substrate connection sites, where it could compromise a wire bond formed on such a connection site. The recessed area has a zig-zag pattern, which allows for sufficient amounts of adhesive to be used to securely attach the die to the substrate, yet does not enlarge the recessed area such that the package size may be adversely affected.

An electronic device includes a first terminal having a first center portion, and a first external and internal end portions that are respectively bent at opposing ends of the first center portion to extend in first and second directions opposite to each other, a second terminal having a second center portion, and a second external and internal end portions that are respectively bent at opposing ends of the second center portion to extend in the first and second directions, an insulating sheet sandwiched by the first and second center portions, and a casing having a first resin in contact with the first and second center portions, and a second resin portion that holes the first resin portion. The first resin portion holds at least a part of the first and second terminals and the insulating sheet, with the first and second external end portions being exposed to an outside thereof.

Implementations of semiconductor packages may include: a semiconductor wafer, a glass lid fixedly coupled to a first side of the semiconductor die by an adhesive, a redistribution layer coupled to a second side of the semiconductor die, and a plurality of ball mounts coupled to the redistribution layer on a side of the redistribution layer coupled to the semiconductor die. The adhesive may be located in a trench around a perimeter of the semiconductor die and located in a corresponding trench around a perimeter of the glass lid.

HEMT having a drain field plate is provided. The drain field plate is formed in the area between the gate and drain of a HEMT. The drain field plate includes a metal pad that has a larger projection area than the drain pad. The drain field plate and semiconductor layer disposed beneath the drain field plate form a metal-semiconductor (M-S) Schottky structure. The capacitance of the M-S Schottky structure generates capacitance in the semiconductor area, which increases the breakdown voltage of the transistor components of the HEMT. A portion of the substrate under the active area may be removed to thereby increase the heat conductivity and reduce the junction temperature of the transistor components of the HEMT.

Provided is a packaging method, including: providing a base with a groove in its surface, which includes at least one pad exposed by the groove; providing a chip having a first surface and a second surface opposite to each other, at least one conductive bump being provided on the first surface of the chip; filling a first binder in the groove; applying a second binder on the first surface of the chip and the conductive bump; and installing the chip on the base, the conductive bump passing through the first binder and the second binder to connect with the pad.