A chip package is provided. The chip package includes a substrate structure. The substrate structure includes a redistribution structure, a third insulating layer, and a fourth insulating layer. The first wiring layer has a conductive pad. The conductive pad is exposed from the first insulating layer, and the second wiring layer protrudes from the second insulating layer. The third insulating layer is under the first insulating layer of the redistribution structure and has a through hole corresponding to the conductive pad of the first wiring layer. The conductive pad overlaps the third insulating layer. The fourth insulating layer disposed between the redistribution structure and the third insulating layer. The chip package includes a chip over the redistribution structure and electrically connected to the first wiring layer and the second wiring layer.

While a substrate is placed on a substrate placement stage provided in a central substrate transfer unit, the substrate is transferred to a component loading operation unit, after operation for loading a component on the substrate has been performed by the component loading operation unit, the central substrate transfer unit is moved to the side of a first component crimping operation unit to thereby transfer the substrate that remains placed on the substrate placement stage to the first component crimping operation unit, and the component is crimped to the substrate by the first component crimping operation unit.

A silicon integrated circuit. In some embodiments, the silicon integrated circuit includes a first conductive trace, on a top surface of the silicon integrated circuit, a dielectric layer, on the first conductive trace, and a second conductive trace, on the dielectric layer, connected to the first conductive trace through a first via.

The present disclosure provides a semiconductor package structure and a method of manufacturing the same. The semiconductor package structure includes a substrate, a first electronic component, an interlayer, a third electronic component and an encapsulant. The first electronic component is disposed on the substrate. The first electronic component has an upper surface and a lateral surface and a first edge between the upper surface and the lateral surface. The interlayer is on the upper surface of the first electronic component. The third electronic component is attached to the upper surface of the first electronic component via the interlayer. The encapsulant encapsulates the first electronic component and the interlayer. The interlayer does not contact the lateral surface of the first electronic component.

A semiconductor device (1,21) includes a solid state device (2,22), a semiconductor chip (3) that has a functional surface (3a) on which a functional element (4) is formed and that is bonded on a surface of the solid state device with the functional surface thereof facing the surface of the solid state device and while maintaining a predetermined distance between the functional surface thereof and the surface of the solid state device, an insulating film (6) that is provided on the surface (2a, 22a) of the solid state device facing the semiconductor chip and that has an opening (6a) greater in size than the semiconductor chip when the surface of the solid state device facing the semiconductor chip is vertically viewed down in plane, and a sealing layer (7) that seals a space between the solid state device and the semiconductor chip.

A wiring substrate includes a first substrate and an electronic component mounted on an upper surface of the first substrate. A first pad is formed on an uppermost wiring layer of the first substrate. A connection terminal is formed on the electronic component and is located proximate to the first pad in a plan view. The wiring substrate further includes a connection member formed on the first pad to electrically connect the first pad and the connection terminal. The connection member includes a rod-shaped core and a solder layer, which is coated around the core and joined to the first pad. The solder layer includes a bulge that spreads from the core of the connection member in a planar direction. The bulge is joined to the connection terminal of the electronic component.

The semiconductor device includes at least three semiconductor elements disposed directly or indirectly on a planar member and constituting an upper arm and a lower arm which perform ON and OFF action at mutually differential times; an upper-surface voltage applied region of each semiconductor element is configured to be narrower than an area of the aforementioned whole semiconductor element in planar view; and each semiconductor element is disposed so that the shortest distance between the semiconductor elements constituting the upper arm is formed so as to be longer than the shortest distance between the semiconductor element constituting the upper arm and the semiconductor element constituting the lower arm.

In order to prevent cracks from occurring at the corners of semiconductor dies after the semiconductor dies have been bonded to other substrates, an opening is formed adjacent to the corners of the semiconductor dies, and the openings are filled and overfilled with a buffer material that has physical properties that are between the physical properties of the semiconductor die and an underfill material that is placed adjacent to the buffer material.

A solid-state storage device includes a housing, a wiring board and a semiconductor package unit. The housing is formed with a heat-dissipating recess thereon. The wiring board is fixed in the housing. One side of the semiconductor package unit is mounted on the wiring board, and the other side of the semiconductor package unit is embedded in the heat-dissipating recess. A top surface and lateral surfaces surrounding the top surface of the semiconductor package unit are all thermally connected to the housing in the heat-dissipating recess.

Hybrid microelectronic substrates, and related devices and methods, are disclosed herein. In some embodiments, a hybrid microelectronic substrate may include a low-density microelectronic substrate having a recess at a first surface, and a high-density microelectronic substrate disposed in the recess and coupled to a bottom of the recess via solder.