Provided is a semiconductor device including a drift region, a base region, two trench portions and a mesa portion, wherein at least one of the two trench portions is a gate trench portion, the mesa portion includes: a first conductivity type emitter region provided to be exposed on an upper surface of the mesa portion; a second conductivity type contact region provided to be exposed on the upper surface of the mesa portion alternately with the emitter region in an extending direction; and a second conductivity type connecting region with a higher doping concentration than the base region, wherein the connecting region is provided to overlap with the emitter region in a top view, is arranged apart from the gate trench portion, is arranged below the upper surface of the mesa portion, and connects two of the contact regions sandwiching the emitter region in the extending direction.

A semiconductor device includes: a first semiconductor layer located in a diode region, the first semiconductor layer including a plurality of first semiconductor regions and a plurality of second semiconductor regions alternately arranged in a first direction; a second semiconductor layer located in the IGBT region; and a third semiconductor layer located on the first semiconductor layer in the diode region, an impurity concentration of the third semiconductor layer having a maximum at a first position in a second direction, an impurity concentration of the first semiconductor region having a maximum at a second position in the second direction, a third position being separated from the upper surface of the first electrode by a length that is 3 times a distance between the second position and a lower end of the third semiconductor layer, the first position being the same as or lower than the third position.

A device includes a first region, a second region disposed on the first region, a third region and a fourth region abutting the third region disposed in the second region, a fifth region disposed in the third region and coupled to a collector disposed above, and a sixth region disposed in the fourth region and coupled to an emitter disposed above. A first isolation is disposed between the collector and the emitter. A seventh region is disposed in the fifth region and coupled to the collector is spaced apart from the first isolation. The first region, the third region, the fifth region, the collector and the emitter have a first conductivity type different from a second conductivity type that the second region, the fourth region, the sixth region and the seventh region have.

Provided is a semiconductor device including a semiconductor substrate having a first dopant of a first conductivity type and a second dopant of a second conductivity type, both the first dopant and the second dopant being distributed in an entire part of the semiconductor substrate, the semiconductor substrate including a drift region of the first conductivity type, a dielectric film provided on an upper surface of the semiconductor substrate, a high concentration region of the first conductivity type provided in contact with the dielectric film below the dielectric film and having a higher doping concentration than the drift region, and a fall off region that is provided in contact with the dielectric film below the dielectric film and in which a concentration of the dopant of the second conductivity type decreases toward the dielectric film.

A semiconductor device includes a transistor array and a sense pad. The transistor array includes a plurality of transistor cells electrically connected in parallel between a source electrode and a drain structure. The drain structure is formed in a semiconductor portion based on a single-crystalline wide bandgap material. A sense element formed from the wide bandgap material includes at least one rectifying junction electrically connected between the sense pad and the source electrode.

A semiconductor device includes a first electrode and a second electrode. The first electrode is connected to a collector layer and a first portion on the collector layer side of a cathode layer. The second electrode is connected to a second portion of the cathode layer excluding the first portion. A work function of the first electrode is larger than a work function of the second electrode, and one of the first electrode and the second electrode and the semiconductor substrate sandwich another of the first electrode and the second electrode in a thickness direction of the semiconductor substrate.

An insulated gate bipolar transistor includes: a gate electrode embedded in a gate trench through a gate insulating film, the gate trench penetrating an emitter region and a base region; and a dummy electrode embedded in a dummy trench through a dummy insulating film, the dummy trench penetrating the emitter region and the base region and being disposed on each side of the gate trench and laterally spaced from each side of the gate trench so as to laterally face the gate trench through the base region, wherein the dummy electrode includes a bottom dummy conductive member disposed at a bottom of the dummy trench such that an upper surface of the bottom dummy conductive member is located lower than a lower surface of the base region, the bottom dummy conductive member being configured to be electrically connected to a gate potential.

A semiconductor device includes a semiconductor substrate, a gate insulating film, a gate, and a first polysilicon film. The semiconductor substrate has a first main surface and a second main surface that is an opposite surface of the first main surface. The semiconductor substrate has a first portion and a second portion. The semiconductor substrate is a collector region arranged on the second main surface located in the first portion, a cathode region arranged on the second main surface located in the second portion, a drift region arranged on the collector region and the cathode region, an emitter region arranged on the first main surface located in the first portion, a base region arranged between the emitter region and the collector region, and an anode region arranged on the first main surface located in the second portion.

A semiconductor device including a semiconductor substrate, first and second transistor sections and a diode section provided on the substrate, is provided. The diode section is arranged to be adjacent to and sandwiched between the first and second transistor sections in a predetermined arrangement direction. The diode section includes a drift region; a base region above the drift region; first cathode regions and second cathode regions below the drift region. The first and second transistor sections each include a collector region. The first cathode regions are provided continuously between the collector regions of the first and second transistor sections. One end and another end of the first cathode regions in the arrangement direction are in contact with the collector regions of the first and second transistor sections, respectively. The first and second cathode regions are in contact with each other and alternating in a direction orthogonal to the arrangement direction.

A semiconductor device includes a semiconductor substrate and a metal film. The metal film is located on the semiconductor substrate. The metal film includes a portion to have a Schottky junction with the semiconductor substrate. The metal film is made of an aluminum alloy in which an element is added to aluminum. The metal film includes a lower metal layer and an upper metal layer. The lower metal layer is located on the semiconductor substrate. The upper metal layer stacks on the lower metal layer. The lower metal layer has a thickness of 2.6 micrometers or less in a stacking direction of the lower metal layer and the upper metal layer.