A semiconductor device structure is provided. The semiconductor device structure includes a substrate having a base and a fin structure over the base. The semiconductor device structure includes an isolation structure over the base and surrounding a lower portion of the fin structure. The semiconductor device structure includes a gate stack wrapped around an upper portion of the fin structure. The semiconductor device structure includes a source/drain structure partially embedded in the isolation structure and the lower portion of the fin structure. The source/drain structure has an undoped semiconductor layer and a first doped layer over the undoped semiconductor layer, and the undoped semiconductor layer separates the first doped layer from the isolation structure.

A semiconductor device includes an underlying substrate, two stack units disposed over the underlying substrate, and a feature disposed between the stack units. The stack units are spaced apart from each other. Each of the stack units includes a plurality of conductive films and a plurality of dielectric films disposed to alternate with the conductive films, an inter-metal dielectric (IMD) portion, and a hard mask film. An uppermost one of the dielectric films of each of the stack units is disposed over the conductive films, and has a dimension smaller than those of the conductive films and those of remaining ones of the dielectric films of each of the stack units. The feature includes a plurality of repeating units and a plurality of separators which are disposed to alternate with the repeating units. A method for manufacturing the semiconductor device is also disclosed.

A semiconductor device having a reduced amount of oxygen vacancy in a channel formation region of an oxide semiconductor is provided. Further, a semiconductor device which includes an oxide semiconductor and has improved electric characteristics is provided. Furthermore, a methods for manufacturing the semiconductor device is provided. An oxide semiconductor film is formed; a conductive film is formed over the oxide semiconductor film at the same time as forming a low-resistance region between the oxide semiconductor film and the conductive film; the conductive film is processed to form a source electrode and a drain electrode; and oxygen is added to the low-resistance region between the source electrode and the drain electrode, so that a channel formation region having a higher resistance than the low-resistance region is formed and a first low-resistance region and a second low-resistance region between which the channel formation region is positioned are formed.

A semiconductor device including: a first S/D arrangement including a silicide-sandwiched portion of a corresponding active region having a silicide-sandwiched configuration, a first portion of a corresponding metal-to-drain/source (MD) contact structure, a first via-to-MD (VD) structure, and a first buried via-to-source/drain (BVD) structure; a gate structure over a channel portion of the corresponding active region; and a second S/D arrangement including a first doped portion of the corresponding active region; and at least one of the following: an upper contact arrangement including a first silicide layer over the first doped portion, a second portion of the corresponding MD contact structure; and a second VD structure; or a lower contact arrangement including a second silicide layer under the first doped portion, and a second BVD structure.

A semiconductor device, a manufacturing method thereof, and a display panel are provided. The semiconductor device includes a first active component. The first active component includes a first semiconductor layer and a contact layer. The contact layer includes a first doped layer, a second semiconductor layer, and a second doped layer stacked from bottom to top, so that there are at least two PN junction interfaces inside to increase a light to dark current ratio of the semiconductor device.

Semiconductor devices including backside capacitors and methods of forming the same are disclosed. In an embodiment, a semiconductor device includes a first transistor structure; a front-side interconnect structure on a front-side of the first transistor structure, the front-side interconnect structure including a front-side conductive line; a backside interconnect structure on a backside of the first transistor structure, the backside interconnect structure including a backside conductive line, the backside conductive line having a line width greater than a line width of the front-side conductive line; and a first capacitor structure coupled to the backside interconnect structure.

A semiconductor device and a method of forming the same are provided. In an embodiment, an exemplary semiconductor device includes a vertical stack of channel members disposed over a substrate, a gate structure wrapping around each channel member of the vertical stack of channel members, and a source/drain feature disposed over the substrate and coupled to the vertical stack of channel members. The source/drain feature is spaced apart from a sidewall of the gate structure by an air gap and a dielectric layer, and the air gap extends into the source/drain feature.

A semiconductor device includes a substrate including a first active fin and a second active fin respectively extending in a first direction, the substrate having a recess between the first and second active fins, a device isolation film on the substrate, first and second gate structures on the first and second active fins, respectively, and extending in a second direction, and a field separation layer having a first portion between the first and second active fin and in the recess, and a second portion extending from both sides of the first portion in the second direction to an upper surface of the device isolation film. The recess has a bottom surface lower in a third direction intersecting the first direction and the second direction than the upper surface of the device isolation film, and a region of the upper surface of the device isolation film has a flat surface.

Disclosed are a semiconductor device and a method of fabricating the same. The semiconductor device includes an active pattern on a substrate, a device isolation layer provided on the substrate to define the active pattern, a pair of source/drain patterns on the active pattern and a channel pattern therebetween, the channel pattern including semiconductor patterns which are stacked and are spaced apart from each other, a gate electrode crossing the channel pattern, and a gate spacer on a side surface of the gate electrode. The gate spacer located on the device isolation layer includes an upper portion with a first thickness and a lower portion with a second thickness. The second thickness is larger than the first thickness, and the lower portion of the gate spacer is located at a level lower than the uppermost one of the semiconductor patterns.

The present disclosure describes a semiconductor device with a rare earth metal oxide layer and a method for forming the same. The method includes forming fin structures on a substrate and forming superlattice structures on the fin structures, where each of the superlattice structures includes a first-type nanostructured layer and a second-type nanostructured layer. The method further includes forming an isolation layer between the superlattice structures, implanting a rare earth metal into a top portion of the isolation layer to form a rare earth metal oxide layer, and forming a polysilicon structure over the superlattice structures. The method further includes etching portions of the superlattice structures adjacent to the polysilicon structure to form a source/drain (S/D) opening and forming an S/D region in the S/D opening.