A display panel includes the following elements: a substrate including a first base layer, wherein the first base layer includes a transparent polyimide resin; a first pixel circuit and a second pixel circuit over the substrate, spaced from each other with the transmission area between the first pixel circuit and the second pixel circuit, and each including transistors and a storage capacitor; a first display element electrically connected to the first pixel circuit; and a second display element electrically connected to the second pixel circuit.

An active matrix substrate includes a plurality of source bus lines and a plurality of gate bus lines and a plurality of oxide semiconductor TFTs that have a plurality of pixel TFTs, each of which is associated with one of the plurality of pixel regions, and a plurality of circuit TFTs constituting a peripheral circuit, in which each of oxide semiconductor TFTs has an oxide semiconductor layer and a gate electrode disposed on a channel region of the oxide semiconductor layer via a gate insulating layer, the plurality of oxide semiconductor TFTs have a plurality of first TFTs, a plurality of second TFTs, and/or a plurality of third TFTs, and the plurality of first TFTs have the plurality of pixel TFTs, and the plurality of second TFTs and/or the plurality of third TFTs have at least a portion of the plurality of circuit TFTs.

According to one embodiment, a display device includes first semiconductor layers crossing a first scanning line in a non-display area, the first semiconductor layers being a in number, second semiconductor layers crossing a second scanning line in the non-display area, the second semiconductor layers being b in number, and an insulating film disposed between the first and second semiconductor layers and the first and second scanning lines, wherein a and b are integers greater than or equal to 2, and a is different from b, and the first and second semiconductor layers are both entirely covered with the insulating film.

The invention provides a pixel structure, an array substrate, and a display device. The pixel structure includes: scanning lines and data lines; at least one pixel electrode configured in each of pixel areas; at least one shading electrode line connecting to a common voltage, the shading electrode line being configured to be above the data line to shade the data line; a first TFT being configured between the scanning line and the pixel electrode, and the first TFT connecting to the pixel electrode; at least one shading electrode connection line extending along a direction of the scanning line, and the shading electrode connection line electrically connecting to two adjacent shading electrode lines; and the shading electrode connection line being wound to form a mesh pattern, and a semiconductor layer of the first TFT is configured to be opposite to a hollow area of the mesh pattern.

Disclosed is a display device and a method of manufacturing the display device. The display device includes a pixel electrode disposed in an opening area; a common electrode having at least one region that overlaps the pixel electrode in the opening area; a gate line extending along a row direction in a non-opening area that surrounds the opening area; a data line extending along the non-opening area in a column direction that is perpendicular to the row direction; and a touch sensing line extending in the column direction across the opening area, wherein the opening area may have a shape in which a length of the opening area in the row direction is longer than a length of the opening area in the column direction.

A display device includes a substrate, a first conductive layer on the substrate, a buffer layer on the first conductive layer, a first semiconductor layer on the buffer layer, a gate insulating layer on the first semiconductor layer and the buffer layer and a second conductive layer on the gate insulating layer, wherein the second conductive layer is in contact with the first conductive layer and the first semiconductor layer through a first contact hole on the buffer layer and the gate insulating layer.

According to an aspect of the present disclosure, a liquid crystal display device includes a lower substrate including a black matrix and a color filter; an upper substrate disposed to be opposite to the lower substrate; a thin film transistor which on the upper substrate to be opposite to the color filter, and including a gate electrode, an active layer, a source electrode, and a drain electrode; at least one insulting layer disposed on the thin film transistor; a pixel electrode disposed on the insulating layer and electrically connected to the drain electrode; and a common electrode spaced apart from the pixel electrode, and the gate electrode includes a first gate conductive layer including a transparent conductive material, a second gate conductive layer including a first transition metal oxide and a second transition metal oxide, and a third gate conductive layer formed of an opaque conductive layer.

A display device capable of performing image processing is provided. A memory node is provided in each pixel included in the display device. An intended correction data is held in the memory node. The correction data is calculated by an external device and written into each pixel. The correction data is added to image data by capacitive coupling, and the resulting data is supplied to a display element. Thus, the display element can display a corrected image. The correction enables image upconversion, for example.

An active matrix substrate includes a first TFT and a second TFT, each of TFTs includes an oxide semiconductor layer and a gate electrode arranged on the oxide semiconductor layer with a gate insulating layer therebetween, in which in the first TFT, in the oxide semiconductor layer, in at least a part of a first region covered with the gate electrode with the gate insulating layer interposed therebetween, a layered structure including a high mobility oxide semiconductor film having a relatively high mobility and a low mobility oxide semiconductor film placed on the high mobility oxide semiconductor film and having a lower mobility than the high mobility oxide semiconductor film is provided, and in the second TFT, in a first region of the oxide semiconductor layer, throughout, of the high mobility oxide semiconductor film and the low mobility oxide semiconductor film, one oxide semiconductor film is provided, and the other oxide semiconductor film is not provided.

A display apparatus includes a substrate including a display area and a peripheral area outside the display area, a pixel circuit disposed on the substrate in the display area, where the pixel circuit includes a driving thin film transistor and a switching thin film transistor, and a display element connected to the pixel circuit. The driving thin film transistor includes a driving semiconductor layer having a single layer structure, the switching thin film transistor includes a switching semiconductor layer in which a first layer, a second layer, and a third layer, which are oxide semiconductors, are sequentially stacked one on another, and a conductivity of the second layer of the switching semiconductor layer is greater than respective conductivities of the first layer and the third layer of the switching semiconductor layer.