A display device includes a first light blocking layer disposed on a substrate, a second light blocking layer disposed on the substrate and spaced apart from the first light blocking layer, an active layer including a first area disposed on the first light blocking layer, a second area disposed on the substrate between the first light blocking layer and the second light blocking layer, and a third area disposed between the first area and the second area, a gate electrode disposed on the active layer and overlapping a portion of the first area, a first electrode disposed on the gate electrode, and including at least a portion overlapping the first light blocking layer, and a second electrode disposed on the gate electrode, and including at least a portion overlapping the second light blocking layer and at least another portion overlapping the third area of the active layer.

This disclosure discloses an array substrate, and a production method, a display panel, and a display apparatus thereof. Particularly, this disclosure proposes a method of producing an array substrate, having the following steps: providing a substrate having a drive transistor region and a switch transistor region thereon; forming an preset layer for active layer on a side of the substrate; patterning the preset layer for active layer to form a drive active layer and a switch active layer, wherein an orthographic projection of the drive active layer on the substrate is located in the drive transistor region, an orthographic projection of the switch active layer on the substrate is located in the switch transistor region, and a carrier concentration in the drive active layer is less than a carrier concentration in the switch active layer.

An electro-optical device includes a scanning line extending along a first direction and having a light shielding property, a transistor having a semiconductor layer extending along the first direction so as to overlap with the scanning line, a contact hole electrically coupled to the scanning line at a side of a channel region of the semiconductor layer, and an opening provided at a side of a first LDD region and a second LDD region of the semiconductor layer.

A semiconductor device includes a substrate having an insulating surface; a light-transmitting first electrode provided over the substrate; a light-transmitting second electrode provided over the substrate; a light-transmitting semiconductor layer provided so as to be electrically connected to the first electrode and the second electrode; a first wiring electrically connected to the first electrode; an insulating layer provided so as to cover at least the semiconductor layer; a light-transmitting third electrode provided over the insulating layer in a region overlapping with the semiconductor layer; and a second wiring electrically connected to the third electrode.

A transistor is disclosed that includes a substrate, an active layer, a gate electrode, a first electrode, a second electrode, and a first connection electrode. The active includes a first region, a second region, and a channel region between the first region and the second region. The gate electrode is disposed on the active layer and overlaps the channel region. The first electrode is disposed on the substrate and electrically connects to the first region. The second electrode is disposed on the substrate and electrically connects to the second region. The first connection electrode is disposed on the substrate and electrically connects the gate electrode and the second electrode.

A light emitting display device includes first and second pixel circuit portions, each having a transistor with a polycrystalline semiconductor and a transistor with an oxide semiconductor, and first and second light emitting diodes including first and second anodes connected with the first and second pixel circuit portions, respectively. An encapsulation layer covers the first and second pixel circuit portions and the first and second light emitting diodes. A light blocking layer includes first and second light blocking layer openings that are disposed on the encapsulation layer and overlap the first and second anodes, respectively. First and second color filters are disposed in the first and second light blocking layer openings, wherein first and second expansion portions corresponding to the first and second anodes are disposed in a first and second conductive layers disposed first down from the first anode and second down from the second anode, respectively.

A novel composite oxide semiconductor which can be used in a transistor including an oxide semiconductor film is provided. In the composite oxide semiconductor, a first region and a second region are mixed. The first region includes a plurality of first clusters containing In and oxygen as main components. The second region includes a plurality of second clusters containing Zn and oxygen as main components. The plurality of first clusters have portions connected to each other. The plurality of second clusters have portions connected to each other.

The present disclosure provides a thin film transistor, a display substrate and a display device, and belongs to the field of display technology. The thin film transistor of the present disclosure includes: a base, and a gate, an active layer, a source and a drain located on the base, where the gate includes a first gate and a second gate which are sequentially provided on the base and are electrically connected to each other; the active layer is located between the first gate and the second gate, and orthographic projections of the first gate and the second gate on the base are partially overlapped with an orthographic projection of the active layer on the base, and the orthographic projections of the first gate and the second gate on the base are partially overlapped with each other.

A display device includes: a first transistor provided with an oxide semiconductor layer, a first gate electrode facing the oxide semiconductor layer and a first gate insulating layer between the oxide semiconductor layer and the first gate electrode; a first transparent conductive layer above the first transistor;

a second transparent conductive layer above the first transparent conductive layer, the second transparent conductive layer being isolated from the first transparent conductive layer and facing the first transparent conductive layer; and a third transparent conductive layer above the second transparent conductive layer, the third transparent conductive layer being isolated from the second transparent conductive layer, being connected to the first transparent conductive layer and facing the second transparent conductive layer.

An array substrate includes a base substrate; a first thin film transistor on the base substrate and including a first active layer, a first gate electrode, a first source electrode and a first drain electrode; a second thin film transistor on the base substrate and including a second active layer, a second gate electrode, a second source electrode and a second drain electrode; a first gate insulating layer between the first active layer and the first gate electrode; and a second gate insulating layer between the second active layer and the second gate electrode, the second gate insulating layer being different from the first gate insulating layer. The first source electrode, the first drain electrode, and the second gate electrode are in a same layer. The first source electrode and the first drain electrode are on a side of the second gate insulating layer distal to the base substrate.