An array substrate, a manufacturing method thereof, and a display device are provided. The array substrate includes a base substrate; a first conductive layer located on the base substrate, including a source electrode of a switching element; and a color filter layer located on the first conductive layer, wherein the source electrode of the switching element and the color filter layer are abutted in a direction perpendicular to the base substrate.

The electroluminescence device of the disclosure includes: a base material provided with a recessed portion; a light-emitting element including a reflective layer provided on the front surface of the recessed portion, a filling layer having optical transparency and filling an inside of the recessed portion with the reflective layer interposed therebetween, a first electrode having optical transparency provided on the filling layer, an organic layer including a light-emitting layer provided on the first electrode, and a second electrode having optical transparency provided on the organic layer, and an active element connected to the light-emitting element, wherein a display region includes a plurality of unit regions divided from one another, the unit regions include a plurality of the light-emitting elements and the active elements configured to control the light emission of the plurality of light-emitting elements, and the reflective layer of at least one of the light-emitting elements of the plurality of recessed portions functions as a contact portion with the active element.

An array substrate, a method for fabricating the same and a display device are disclosed. The array substrate includes: a gate electrode of a TFT and a gate insulation layer sequentially formed on a base substrate; a semiconductor active layer, an etch stop layer and a source electrode and a drain electrode of the TFT sequentially formed on a part of the gate insulation layer that corresponds to the gate electrode of the TFT, the source and drain electrodes of the TFT are respectively in contact with the semiconductor active layer by way of via holes. The array substrate further includes: a first insulation layer formed between the gate electrode of the TFT and the gate insulation layer and the gate electrode is in contact with the gate insulation layer at a channel region of the TFT between the source electrode and the drain electrode of the TFT.

A display substrate and a display device are provided. The display substrate includes: a base substrate; a first insulating layer arranged on the base substrate, at least one wire containing groove being provided on the first insulating layer; and at least one signal line, at least one of the signal lines being arranged in the wire containing groove, and one wire containing groove being configured to contain one signal line; and a second insulating layer, covering the first insulating layer and the signal line. The display device comprises the display substrate provided by the technical solution described above.

The present disclosure provides a thin film transistor (TFT) substrate and a manufacturing method thereof. The TFT substrate include a TFT; a flat layer to cover the TFT; an opening hole defined in the flat layer and corresponding to a drain of the TFT; a bottom of the opening hole to retain a part of the flat layer for forming a flat layer sheet; a first metal layer formed on the flat layer; a first insulating layer formed on the first metal; a second metal formed on the first insulating layer and pass through the flat layer sheet for electrically connecting to the drain.

Embodiments of the inventive concepts provide a method of fabricating a flexible substrate and the flexible substrate fabricated thereby. The method includes printing a gate catalyst pattern on a separation layer, forming a gate plating pattern on the gate catalyst pattern, forming a gate insulating layer on the gate plating pattern, printing a source catalyst pattern and a drain catalyst pattern spaced apart from each other on the gate insulating layer, and forming a source plating pattern and a drain plating pattern on the source catalyst pattern and the drain catalyst pattern, respectively.

The present disclosure discloses a manufacturing method of a polycrystalline silicon thin film, which includes: forming a first amorphous silicon thin film; crystallizing the first amorphous silicon thin film to form a polycrystalline silicon thin film by applying an excimer laser annealing process; forming a second amorphous silicon thin film on a first surface of the polycrystalline silicon thin film; and etching until the second amorphous silicon thin film is completely removed toward a direction of the polycrystalline silicon thin film from the second amorphous silicon thin film by applying a dry etching process. The present disclosure further discloses a manufacturing method of a thin film transistor array substrate which includes the steps of manufacturing an active layer: forming a layer of a polycrystalline silicon thin film according to the previous polycrystalline silicon thin film; and etching the polycrystalline silicon thin film to form a patterned active layer.

It is an object of the present invention to provide a method for manufacturing a display device in which unevenness generated under a light-emitting element does not impart an adverse effect on the light-emitting element. It is another object of the invention to provide a method for manufacturing a display device in which penetration of water into the inside of the display device through a film having high moisture permeability can be suppressed without increasing processing steps considerably. A display device of the present invention comprises a thin film transistor and a light-emitting element, the light-emitting element including a light-emitting laminated body interposed between a first electrode and a second electrode; wherein the first electrode is formed over an insulating film formed over the thin film transistor; and wherein a planarizing film is formed in response to the first electrode between the first electrode and the insulating film.

The disclosed subject matter provides a thin film transistor and a fabricating method thereof. The thin film transistor includes a substrate, a source electrode and a drain electrode on the substrate, an active layer on the source and drain electrodes, a gate insulating layer on the active layer, and a gate electrode on the gate insulating layer. The active layer extends from the source electrode towards the drain electrode along a non-linear path.

The present disclosure relates to an oxide thin film transistor and a fabricating method thereof. In the oxide thin film transistor, which uses amorphous zinc oxide (ZnO) semiconductor as an active layer, damage to the oxide semiconductor due to dry etching may be minimized by forming source and drain electrodes in a multilayered structure having at least two layers, and improving stability and reliability of a device by employing a dual passivation layer structure, which includes a lower layer for overcoming an oxygen deficiency and an upper layer to minimize effects of an external environment on the multilayered source and drain electrodes.