The present application discloses an array substrate having a plurality of first thin film transistors and a plurality of second thin film transistors. Each of the plurality of first thin film transistors includes a silicon active layer. The array substrate includes a base substrate; a silicon layer having a plurality of silicon active layers respectively for the plurality of first thin film transistors; and a UV absorption layer on a side of the silicon layer distal to the base substrate, and including a plurality of UV absorption blocks. Each of the plurality of UV absorption blocks is on a side of the one of the plurality of silicon active layers distal to the base substrate, and is insulated from the one of the plurality of silicon active layers.

A display may have an array of organic light-emitting diode display pixels. Each display pixel may include a drive transistor coupled in series with one or more emission transistors and a respective organic light-emitting diode (OLED). A semiconducting-oxide transistor may be coupled between a drain terminal and a gate terminal of the drive transistor to help reduce leakage during low-refresh-rate display operations. To compensate for variations in the threshold voltage of the semiconducting-oxide transistor, the magnitude of a high voltage level of a scan control signal provided to the gate terminal of the semiconducting-oxide transistor may be adjusted. Sensing circuitry may be used to sense a display current while displaying a calibration image. The sensed display current may be compared to an expected display current associated with the calibration image. Processing circuitry may update the high voltage level based on the actual display current compared to the expected display current.

The present application discloses an array substrate having a plurality of first thin film transistors and a plurality of second thin film transistors. Each of the plurality of first thin film transistors includes a silicon active layer. The array substrate includes a base substrate; a silicon layer having a plurality of silicon active layers respectively for the plurality of first thin film transistors; and a UV absorption layer on a side of the silicon layer distal to the base substrate, and including a plurality of UV absorption blocks. Each of the plurality of UV absorption blocks is on a side of the one of the plurality of silicon active layers distal to the base substrate, and is insulated from the one of the plurality of silicon active layers.

The present application provides a thin film transistor (TFT) and a method of fabricating the same, a display substrate and a method of fabricating the same, and a display device. The TFT includes a substrate, and a source electrode, a drain electrode and an active layer on the substrate. The active layer includes first and second active layers, the first active layer has a carrier mobility greater than that of the second active layer, and the second active layer is closer to the source electrode and the drain electrode than the first active layer. An orthographic projection of the source electrode on the substrate and an orthographic projection of the drain electrode on the substrate at least partially overlap with an orthographic projection of the second active layer on the substrate, respectively, and the first active layer is separated from the source electrode and the drain electrode.

A display may have an array of organic light-emitting diode display pixels. Each display pixel may include a drive transistor coupled in series with one or more emission transistors and a respective organic light-emitting diode (OLED). A semiconducting-oxide transistor may be coupled between a drain terminal and a gate terminal of the drive transistor to help reduce leakage during low-refresh-rate display operations. To compensate for variations in the threshold voltage of the semiconducting-oxide transistor, the magnitude of a high voltage level of a scan control signal provided to the gate terminal of the semiconducting-oxide transistor may be adjusted. Sensing circuitry may be used to sense a display current while displaying a calibration image. The sensed display current may be compared to an expected display current associated with the calibration image. Processing circuitry may update the high voltage level based on the actual display current compared to the expected display current.

An inverter includes: a first thin film transistor including: a first substrate; at least one first buffer layer formed on the first substrate; and a first polysilicon layer formed on a part of the at least one first buffer layer; and a second thin film transistor including: a second substrate; at least one second buffer layer formed on the second substrate; and a second polysilicon layer formed on a part of the at least one second buffer layer. The first thin film transistor further includes a first light shielding layer formed between the first substrate and the at least one first buffer layer, and/or the second thin film transistor further includes a second light shielding layer formed between the second substrate and the at least one second buffer layer. A GOA circuit is further provided.

The present application provides a thin film transistor (TFT) and a method of fabricating the same, a display substrate and a method of fabricating the same, and a display device. The TFT includes a substrate, and a source electrode, a drain electrode and an active layer on the substrate. The active layer includes first and second active layers, the first active layer has a carrier mobility greater than that of the second active layer, and the second active layer is closer to the source electrode and the drain electrode than the first active layer. An orthographic projection of the source electrode on the substrate and an orthographic projection of the drain electrode on the substrate at least partially overlap with an orthographic projection of the second active layer on the substrate, respectively, and the first active layer is separated from the source electrode and the drain electrode.

Embodiments of the present application disclose a flexible thin film transistor and a manufacturing method therefor. The flexible thin film transistor includes: a substrate; an active layer formed on the substrate; a gate electrode formed on the active layer; and an organic insulation layer formed on the gate electrode. In the present application, a stress of interlayer dielectric layer(s) is decreased. The overall thickness of the interlayer dielectric layer(s) is reduced, and thereby a bendability of a flexible display screen is improved.

A thin-film transistor (TFT) and a manufacturing method thereof, an array substrate and a manufacturing method thereof, and a display device are disclosed. The manufacturing method of a TFT includes: forming an active layer, a gate electrode, a source electrode and a drain electrode respectively electrically connected with the active layer, and a gate insulating layer disposed between the gate electrode and the active layer, so that the gate electrode, the source electrode and the drain electrode are formed in the same patterning process. The method can reduce the number of masks used in the manufacturing process of the TFT or an array substrate, reduce the technology process, improve the productivity, and reduce the production cost.

A method for manufacturing an array substrate includes forming a buffer layer on a substrate; forming a source and a data line in the buffer layer, forming a first gate, a second gate, a first scan line, and a second scan line on the buffer layer, simultaneously; forming a semiconductor layer; forming a conductor layer by converting the semiconductor layer formed on the first scan line and the second scan line into a conductor; forming a first pixel electrode on the semiconductor layer and forming a second pixel electrode on the conductor layer, simultaneously.