Semiconductor module having a first substrate, a second substrate and a spacer distancing the substrates from each other, wherein the spacer is formed by at least one elastic shaped metal body.

A semiconductor device includes a metal chip mounting member and a semiconductor chip bonded to the chip mounting member through a metal sintered material, wherein the metal sintered material includes a first portion overlapping the semiconductor chip in a plan view, and includes a second portion surrounding the semiconductor chip in the plan view, and wherein a porosity ratio of the first portion is greater than or equal to 1% and less than 15%, and a porosity ratio of the second portion is greater than or equal to 15% and less than or equal to 50%.

According to an aspect of the inventive concept, there is provided a die-to-wafer bonding structure including a die having a first test pad, a first bonding pad formed on the first test pad, and a first insulating layer, the first bonding pad penetrates the first insulating layer. The structure may further include a wafer having a second test pad, a second bonding pad formed on the second test pad, and a second insulating layer, the second bonding pad penetrates the second insulating layer. The structure may further include a polymer layer surrounding all side surfaces of the first bonding pad and all side surfaces of the second bonding pad, the polymer layer being arranged between the die and the wafer. Additionally, the wafer and the die may be bonded together.

A method for manufacturing a semiconductor device of an embodiment includes: dividing a semiconductor wafer including a plurality of chip areas each having a columnar electrode and dicing areas, along the dicing areas to form a plurality of semiconductor chips; sticking a first resin film on the plurality of semiconductor chips while filling parts of the first resin film in gaps each present between adjacent ones of the plurality of semiconductor chips; forming trenches narrower in width than the gaps in the first resin film filled in the gaps; and sequentially picking up the plurality of semiconductor chips each having the first resin film, and mounting the picked semiconductor chip on a substrate.

A semiconductor package includes a first package substrate; a first semiconductor chip on the first package substrate; a first conductive connector on the first package substrate; and an interposer including a central portion on the first semiconductor chip and an outer portion having the first conductive connector attached thereto. The central portion of the interposer includes a bottom surface defining a recess from a bottom surface of the outer portion of the interposer in a vertical direction that is perpendicular to a top surface of the first package substrate. A thickness in the vertical direction of the outer portion of the interposer is greater than a thickness in the vertical direction of the central portion of the interposer.

Embodiments disclosed herein include electronic packages. In an embodiment, an electronic package comprises a package substrate, and a die coupled to the package substrate. In an embodiment, a stiffener is around the die and over the package substrate. In an embodiment, an electrically non-conductive underfill is around first level interconnects (FLIs) between the package substrate and the die. In an embodiment, an electrically conductive layer is around the non-conductive underfill.

A semiconductor device includes a metal chip mounting member and a semiconductor chip bonded to the chip mounting member through a metal sintered material, wherein the metal sintered material includes a first portion overlapping the semiconductor chip in a plan view, and includes a second portion surrounding the semiconductor chip in the plan view, and wherein a porosity ratio of the first portion is greater than or equal to 1% and less than 15%, and a porosity ratio of the second portion is greater than or equal to 15% and less than or equal to 50%.

Various embodiments of the present application are directed towards a method for forming an integrated chip in which a group III-V device is bonded to a substrate, as well as the resulting integrated chip. In some embodiments, the method includes: forming a chip including an epitaxial stack, a metal structure on the epitaxial stack, and a diffusion layer between the metal structure and the epitaxial stack; bonding the chip to a substrate so the metal structure is between the substrate and the epitaxial stack; and performing an etch into the epitaxial stack to form a mesa structure with sidewalls spaced from sidewalls of the diffusion layer. The metal structure may, for example, be a metal bump patterned before the bonding or may, for example, be a metal layer that is on an etch stop layer and that protrudes through the etch stop layer to the diffusion layer.

In a soldering structure, a power module having the same, and a method for manufacturing the power module configured for constantly determining a height of a power module when the power module is manufactured, the soldering structure may include a soldering target portion; a metal layer including a bonding surface having a bonding region in which the soldering target portion is bonded by solder; and at least one wire located in the solder within the bonding region.

An anisotropic conductive film includes a conductive particle array layer in which a plurality of conductive particles are arrayed in a prescribed manner and held in an insulating resin layer. The anisotropic conductive film has a direction in which a thickness distribution, around the individual conductive particle, of the insulating resin layer holding the array of the conductive particles is asymmetric with respect to the conductive particle. The direction in which the thickness distribution is asymmetric is aligned in the same direction in the plurality of conductive particles. When an electronic component is mounted using this anisotropic conductive film, short circuits and conductive failure can be reduced.