A sensor package structure and a sensing module thereof are provided. The sensor package structure includes a substrate, a sensor chip disposed on the substrate, a light-curing layer disposed on the sensor chip, a light-permeable layer arranged above the sensor chip through the light-curing layer, and a shielding layer disposed on a surface of the light-permeable layer. The light-curing layer has an inner lateral side and an outer lateral side opposite to the inner lateral side, and the inner lateral side is separated from the outer lateral side by a first distance. In a transverse direction parallel to a top surface of the sensor chip, the outer lateral side is separated from an outer lateral edge by a second distance which is within a range of ½ to ⅓ of the first distance.

A semiconductor package and a method of manufacturing the same are provided. The semiconductor package includes a semiconductor die, a cap layer, a conductive terminal, and a dam structure. The semiconductor die has a first surface. The cap layer is over the semiconductor die and has a second surface facing the first surface of the semiconductor die. The conductive terminal penetrates the cap layer and electrically connects to the semiconductor die. The dam structure is between the semiconductor die and the cap layer and surrounds a portion of the conductive terminal between the first surface and the second surface, thereby forming a gap between the cap layer and the semiconductor die.

The present application provides a semiconductor package and a manufacturing method thereof. The semiconductor package includes a first device, first electrical connectors, a second device and second electrical connectors. The first device is attached to a package substrate. An active side of the first device die faces toward the package substrate. The first electrical connectors connect the active side of the first device die to the package substrate. The second device die is stacked over the first device die. An active side of the second device die faces toward the package substrate. A portion of the active side of the second device die is outside an area that overlaps the first device die. The second electrical connectors connect the portion of the active side of the second device die to the package substrate.

A method for producing an electronic module includes providing a first substrate including at least one first electrical contacting surface, an electronic component including at least one second electrical contacting surface, and a first material layer made of a thermoplastic material including at least one recess extending through the material layer. The first substrate, the electronic component and the first material layer are arranged with the first material layer disposed between the first substrate and the electronic component, and the at least one first electrical contacting surface, the at least one second electrical contacting surface and the at least one recess aligned relative to one another. The first substrate, the electronic component and the material layer are thermocompression bonded. A joint formed between the at least one first electrical contacting surface and the at least one second electrical contacting surface is surrounded or enclosed by the first material layer.

The present disclosure relates to an imaging element package, a method of manufacturing the same, and an electronic device capable of further improving reliability. An imaging element package includes a solid-state imaging element having a first pad, a substrate on which the solid-state imaging element is mounted, the substrate having a second pad, and a wire wiring that connects the first pad and the second pad. The wire wiring has a ball portion bonded to the first pad in a shape having a thickness equal to or larger than a depth of an opening portion provided for opening the first pad, and a crescent portion provided by pressing an end of the metal wire against the ball portion and bonding the end to the ball portion, and connected to the metal wire with a connection length of a predetermined ratio or more with respect to the metal wire.

A semiconductor package structure includes an organic substrate having a first surface, a first recess depressed from the first surface, a first chip over the first surface and covering the first recess, thereby defining a first cavity enclosed by a back surface of the first chip and the first recess, and a second chip over the first chip. The first cavity is an air cavity or a vacuum cavity.

Disclosed are a semiconductor package and a method of fabricating the same. The semiconductor package may include a semiconductor chip structure, a transparent substrate disposed on the semiconductor chip structure, a dam placed on an edge of the semiconductor chip structure and between the semiconductor chip structure and the transparent substrate, and an adhesive layer interposed between the dam and the semiconductor chip structure. The semiconductor chip structure may include an image sensor chip and a logic chip, which are in contact with each other, and the image sensor chip may be closer to the transparent substrate than the logic chip.

Implementations of semiconductor packages may include: a die having a first side and a second side and at least two through silicon vias (TSVs) extending from a first side of the die to the second side of the die. Semiconductor packages may also include a glass lid coupled to a second side of the die through adhesive. The adhesive may be positioned over the at least two TSVs. Semiconductor packages may also include a molding compound around a perimeter of the die, extending from the first side of the die to at least the glass lid.

In one example, a semiconductor device, comprises a substrate having a top side and a conductor on the top side of the substrate, an electronic device on the top side of the substrate connected to the conductor on the top side of the substrate via an internal interconnect, a lid covering a top side of the electronic device, and a thermal material between the top side of the electronic device and the lid, wherein the lid has a through-hole. Other examples and related methods are also disclosed herein.

Some embodiments relate to a three-dimensional (3D) integrated circuit (IC). The 3D IC includes a first IC die comprising a first semiconductor substrate, and a first interconnect structure over the first semiconductor substrate. The 3D IC also includes a second IC die comprising a second semiconductor substrate, and a second interconnect structure that separates the second semiconductor substrate from the first interconnect structure. A seal ring structure separates the first interconnect structure from the second interconnect structure and perimetrically surrounds a gas reservoir between the first IC die and second IC die. The seal ring structure includes a sidewall gas-vent opening structure configured to allow gas to pass between the gas reservoir and an ambient environment surrounding the 3D IC.