The present disclosure relates to an adhesive transfer film for bonding a semiconductor chip and a spacer to a substrate and a method for manufacturing a power module substrate by using same, the adhesive transfer film being obtained by manufacturing an Ag sintering paste in the form of a film. The present disclosure can reduce the process time by minimizing a sintering process, and can reduce equipment investment cost.

Provided is a module which has a package-on-package structure including a redistribution layer and can be easily reduced in height. A module includes an upper module including a substrate, a first component, and a sealing resin layer, and a lower module including an intermediate layer and a redistribution layer. The first component is connected to the redistribution layer with a columnar conductor interposed therebetween and provided in the intermediate layer, and both the first component and a second component are rewired by the redistribution layer. By fixing a resin block containing the second component to a lower surface of the substrate by a fixing conductor, positional deviation of the second component can be prevented. Further, by polishing an upper surface of the resin block, it is possible to improve the flatness.

A display device including pads; an anisotropic conductive film on the pads; and a connection member bonded to the pads through the film, the connection member including bumps, the film includes a supporting layer including a plurality of conductive particles having a part protruded from a first and second surface of the support layer; a first adhesive layer contacting the first surface and the part of each conductive particle protruding from the first surface; and a second adhesive layer contacting the second surface and the part of each conductive particle protruding from the second surface, and wherein the first or second adhesive layer is positioned at both of a first and second region of the display device, the first region being a region in which the pads and the bumps are overlapped and the second region being a region in which the pads and the bumps are not overlapped.

A power module substrate with a Ag underlayer of the invention includes: a circuit layer that is formed on one surface of an insulating layer; and a Ag underlayer that is formed on the circuit layer, in which the Ag underlayer is composed of a glass layer that is formed on the circuit layer side and a Ag layer that is formed by lamination on the glass layer, and regarding the Ag underlayer, in a Raman spectrum obtained by a Raman spectroscopy with incident light made incident from a surface of the Ag layer on a side opposite to the glass layer, when a maximum value of intensity in a wavenumber range of 3,000 cm.sup.−1 to 4,000 cm.sup.−1 indicated by I.sub.A, and a maximum value of intensity in a wavenumber range of 450 cm.sup.−1 to 550 cm.sup.−1 is indicated by I.sub.B, I.sub.A/I.sub.B is 1.1 or greater.

Various apparatus and methods are disclosed. In one aspect, a method of manufacturing a thermal interface material on a semiconductor chip is provided. The method includes placing a preform of a combination of a first metal and a second metal on one of the semiconductor chip or a lid. The preform is liquid phase sintered to cause the combination to evolve to an equilibrium composition and bond to the semiconductor chip.

A semiconductor device includes an insulation board, an electrode provided on the insulation board, a bonding layer provided on the electrode and made of a sintered body of metal particles having an average particle size of nano-order, and a semiconductor element bonded to the electrode via the bonding layer. A layer thickness of the bonding layer is greater than or equal to 220 μm and less than or equal to 700 μm.

A bonding structure bonds a Cu wiring line and a device electrode with each other. The bonding structure is arranged between the Cu wiring line and the device electrode, and comprises a first intermetallic compound (IMC) layer (a layer of an intermetallic compound of Cu and Sn) formed on the interface with the Cu wiring line, a second intermetallic compound (IMC) layer (a layer of an intermetallic compound of Cu and Sn) formed on the interface with the device electrode, and an intermediate layer that is present between the intermetallic compound layers. In the intermediate layer, a network-like IMC (a network-like intermetallic compound of Cu and Sn) is present in Sn.

Provided is an inkjet adhesive which is applied using an inkjet device, wherein the adhesive can suppress generation of voids in the adhesive layer and, after bonding, can enhance adhesiveness, moisture-resistant adhesion reliability, and cooling/heating cycle reliability. An inkjet adhesive according to the present invention comprises a photocurable compound, a photo-radical initiator, a thermosetting compound having one or more cyclic ether groups or cyclic thioether groups, and a compound capable of reacting with the thermosetting compound, and the compound capable of reacting with the thermosetting compound contains aromatic amine.

A method includes forming a first tacking layer on a first connection partner, arranging a first layer on the first tacking layer, forming a second tacking layer on the first layer, arranging a second connection partner on the second tacking layer, heating the tacking layers and first layer, and pressing the first connection partner towards the second connection partner, with the first layer arranged between the connection partners, such that a permanent mechanical connection is formed between the connection partners. Either the tacking layers each include a second material evenly distributed within a first material, the second material being configured to act as or to release a reducing agent, or the tacking layers each include a mixture of at least a third material and a fourth material, the materials in the mixture chemically reacting with each other under the influence of heat such that a reducing agent is formed.

A method for the production of a silver sintering agent in the form of a layer-shaped silver sintering body having silver oxide surfaces and the use thereof are provided.