A semiconductor package includes a pad and leads, the pad and leads including a base metal predominantly including copper, a first plated metal layer predominantly including nickel in contact with the base metal, and a second plated metal layer predominantly including silver in contact with the first plated metal layer. The first plated metal layer has a first plated metal layer thickness of 0.1 to 5 microns, and the second plated metal layer has a second plated metal layer thickness of 0.2 to 5 microns. The semiconductor package further includes an adhesion promotion coating predominantly including silver oxide in contact with the second plated metal layer opposite the first plated metal layer, a semiconductor die mounted on the pad, a wire bond extending between the semiconductor die and a lead of the leads, and a mold compound covering the semiconductor die and the wire bond.

A semiconductor package manufacturing method of the disclosure includes providing a multilayer adhesive film, forming a notch and a plurality of openings extending through the multilayer adhesive film, attaching the multilayer adhesive film to a back side of a wafer to form a stack, separating the stack into a plurality of individual stacks, separating each of the plurality of individual stacks into an upper stack and a lower stack, providing a substrate on which a first semiconductor chip is mounted, and stacking the upper stack on the first semiconductor chip. The upper stack includes a second semiconductor chip and a die attach pattern covering a portion of a back surface of the second semiconductor chip. A first side surface of the die attach pattern is aligned with a first side surface of the first semiconductor chip.

A semiconductor package manufacturing method of the disclosure includes providing a multilayer adhesive film, forming a notch and a plurality of openings extending through the multilayer adhesive film, attaching the multilayer adhesive film to a back side of a wafer to form a stack, separating the stack into a plurality of individual stacks, separating each of the plurality of individual stacks into an upper stack and a lower stack, providing a substrate on which a first semiconductor chip is mounted, and stacking the upper stack on the first semiconductor chip. The upper stack includes a second semiconductor chip and a die attach pattern covering a portion of a back surface of the second semiconductor chip. A first side surface of the die attach pattern is aligned with a first side surface of the first semiconductor chip.

Disclosed is a die-bonding method which provides a target substrate having a circuit structure with multiple electrical contacts and multiple semiconductor elements each semiconductor element having a pair of electrodes, arranges the multiple semiconductor elements on the target substrate with the pair of electrodes of each semiconductor element aligned with two corresponding electrical contacts of the target substrate, and applies at least one energy beam to join and electrically connect the at least one pair of electrodes of every at least one of the multiple semiconductor elements and the corresponding electrical contacts aligned therewith in a heating cycle by heat carried by the at least one energy beam in the heating cycle. The die-bonding method delivers scattering heated dots over the target substrate to avoid warpage of PCB and ensures high bonding strength between the semiconductor elements and the circuit structure of the target substrate.

Disclosed is a die-bonding method which provides a target substrate having a circuit structure with multiple electrical contacts and multiple semiconductor elements each semiconductor element having a pair of electrodes, arranges the multiple semiconductor elements on the target substrate with the pair of electrodes of each semiconductor element aligned with two corresponding electrical contacts of the target substrate, and applies at least one energy beam to join and electrically connect the at least one pair of electrodes of every at least one of the multiple semiconductor elements and the corresponding electrical contacts aligned therewith in a heating cycle by heat carried by the at least one energy beam in the heating cycle. The die-bonding method delivers scattering heated dots over the target substrate to avoid warpage of PCB and ensures high bonding strength between the semiconductor elements and the circuit structure of the target substrate.

A semiconductor package system is disclosed. The system includes a first interposer and a first integrated circuit die electrically coupled and thermally coupled to a first side of the first interposer. The system further includes a second integrated circuit die electrically coupled and thermally coupled to a second side of the first interposer. The system further includes a ring carrier electrically coupled and thermally coupled to the first interposer. The ring carrier is configured to transmit an input to the first interposer. In some embodiments, the system further includes at least one thermal spreader thermally coupled to the ring carrier and at least one of the first integrated circuit, the second integrated circuit, or the first interposer.

A semiconductor package system is disclosed. The system includes a first interposer and a first integrated circuit die electrically coupled and thermally coupled to a first side of the first interposer. The system further includes a second integrated circuit die electrically coupled and thermally coupled to a second side of the first interposer. The system further includes a ring carrier electrically coupled and thermally coupled to the first interposer. The ring carrier is configured to transmit an input to the first interposer. In some embodiments, the system further includes at least one thermal spreader thermally coupled to the ring carrier and at least one of the first integrated circuit, the second integrated circuit, or the first interposer.

A composition includes: a compound (A), having an Si—O bond and a cationic functional group that includes at least one selected from the group consisting of a primary nitrogen atom and a secondary nitrogen atom; a compound (B), having at least three —C(═O)OX groups, wherein X is a hydrogen atom or an alkyl group with a carbon number of from 1 to 6, and from one to six of the —C(═O)OX groups is a —C(═O)OH group; and a compound (C), having a cyclic structure and at least one primary nitrogen atom that is directly bonded to the cyclic structure, the composition having a percentage of the primary and the secondary nitrogen atoms in the compound (A), with respect to a total amount of the primary and the secondary nitrogen atoms in the compound (A) and the primary nitrogen atom in the compound (C), of from 3 mol % to 95 mol %.

The semiconductor device of the present embodiment includes a lead frame having a projection portion, the projection portion having an upper face and a side face, a semiconductor chip provided above the projection portion, and a bonding material provided between the projection portion and the semiconductor chip, the bonding material being in contact with the upper face and the side face, the bonding material bonding the lead frame and the semiconductor chip.

The semiconductor device of the present embodiment includes a lead frame having a projection portion, the projection portion having an upper face and a side face, a semiconductor chip provided above the projection portion, and a bonding material provided between the projection portion and the semiconductor chip, the bonding material being in contact with the upper face and the side face, the bonding material bonding the lead frame and the semiconductor chip.