A component carrier which includes a laminated stack having at least one electrically insulating layer structure and/or at least one electrically conductive layer structure, and a component having at least one electrically conductive connection structure and embedded in the stack, wherein the at least one electrically conductive connection structure of the component is exposed with respect to the stack so that a free exposed end of the at least one electrically conductive connection structure of the component is flush with or extends beyond an exterior main surface of the stack.

A semiconductor package and a manufacturing method thereof are provided. The semiconductor package includes a semiconductor die, an encapsulant, a redistribution layer, a polymer pattern and a heat dissipation structure. The semiconductor die has conductive pads at its active side, and is laterally encapsulated by the encapsulant. The redistribution layer is disposed at the active side of the semiconductor die, and spans over a front surface of the encapsulant. The redistribution layer is electrically connected with the conductive pads. The polymer pattern is disposed at a back surface of the encapsulant that is facing away from the front surface of the encapsulant. The semiconductor die is surrounded by the polymer pattern. The heat dissipation structure is in contact with a back side of the semiconductor die that is facing away from the active side, and extends onto the polymer pattern.

A semiconductor device package includes a carrier, a first conductive post and a first adhesive layer. The first conductive post is disposed on the carrier. The first conductive post includes a lower surface facing the carrier, an upper surface opposite to the lower surface and a lateral surface extended between the upper surface and the lower surface. The first adhesive layer surrounds a portion of the lateral surface of the first conductive post. The first adhesive layer comprises conductive particles and an adhesive. The first conductive post has a height measured from the upper surface to the lower surface and a width. The height is greater than the width.

Embodiments for a packaged semiconductor device and methods of making are provided herein, where a packaged semiconductor device includes a package body having a recess in which a pressure sensor is located; a polymeric gel within the recess that vertically and laterally surrounds the pressure sensor; and a media shield including at least one metal layer on a top surface of the polymeric gel, wherein the media shield and the polymeric gel are sufficiently flexible to transmit pressure to the pressure sensor.

Semiconductor packages with electromagnetic interference supported stacked die and a method of manufacture therefor is disclosed. The semiconductor packages may house a stack of dies in a system in a package (SiP) implementation, where one or more of the dies may be wire bonded to a semiconductor package substrate. The dies may be stacked in a partially overlapping, and staggered manner, such that portions of some dies may protrude out over an edge of a die that is below it. This dies stacking may define a cavity, and in some cases, wire bonds may be made to the protruding portions of the die. Underfill material may be provided in the cavity and cured to form an underfill support. Wire bonding of the bond pads overlying the cavity formed by the staggered stacking of the dies may be performed after the formation of the underfill support.

Systems and methods of securing an integrated circuit assembly includes: arranging a plurality of securing elements within a plurality of orifices fabricated within one or more layer components of a plurality of layer components of an integrated circuit assembly; applying a mechanical compression load against the integrated circuit assembly that uniformly compresses together the plurality of layer components of the integrated circuit assembly; after applying the mechanical compression load to the integrated circuit assembly, fastening the plurality of securing elements while the integrated circuit assembly is in a compressed state based on the mechanical compression load; and terminating the application of the mechanical compression load against the integrated circuit assembly based on the fastening of the plurality of securing elements.

A micro-LED display panel including a substrate, an anisotropic conductive film, and a plurality of micro-LEDs is provided. The anisotropic conductive film is disposed on the substrate. The micro-LEDs and the anisotropic conductive film are disposed at the same side of the substrate, and the micro-LEDs are electrically connected to the substrate through the anisotropic conductive film. Each of the micro-LEDs includes an epitaxial layer and an electrode layer electrically connected to the epitaxial layer, and the electrode layers comprises a first electrode and a second electrode which are located between the substrate and the corresponding epitaxial layer. A ratio of a thickness of each of the electrode layers to a thickness of the corresponding epitaxial layer ranges from 0.1 to 0.5, and a gap between the first electrode and the second electrode of each of the micro-LEDs is in a range of 1 m to 30 m.

The present invention provides a film-shaped firing material 1 including sinterable metal particles 10, and a binder component 20, in which a content of the sinterable metal particles 10 is in a range of 15% to 98% by mass, a content of the binder component 20 is in a range of 2% to 50% by mass, a tensile elasticity of the film-shaped firing material at 60 C. is in a range of 4.0 to 10.0 MPa, and a breaking elongation thereof at 60 C. is 500% or greater; and a film-shaped firing material with a support sheet including the film-shaped firing material 1 which contains sinterable metal particles and a binder component, and a support sheet 2 which is provided on at least one side of the film-shaped firing material, in which an adhesive force (a2) of the film-shaped firing material to the support sheet is smaller than an adhesive force (a1) of the film-shaped firing material to a semiconductor wafer, the adhesive force (a1) is 0.1 N/25 mm or greater, and the adhesive force (a2) is in a range of 0.1 N/25 mm to 0.5 N/25 mm.

Integrated heat spreaders having electromagnetically-formed features, and semiconductor packages incorporating such integrated heat spreaders, are described. In an example, an integrated heat spreader includes a top plate flattened using an electromagnetic forming process. Methods of manufacturing integrated heat spreaders having electromagnetically-formed features are also described.

Wireless modules having a semiconductor package attached to an antenna package and cap package are disclosed. The semiconductor package may have one or more electronic components disposed thereon. The antenna package may be communicatively coupled to the semiconductor package using by one or more coupling pads. The antenna package may further have one or more radiating elements for transmitting and or receiving wireless signals. The cap package may also be attached to the semiconductor package on a side opposing the side on which the antenna package is disposed. The cap package may provide routing and/or additional antenna elements. The cap package may also allow for thermal grease to be dispensed therethrough. The antenna package, the cap package, and the semiconductor package may have dissimilar number of interconnect layers and/or dissimilar materials of construct.