A semiconductor device includes a first lead portion and a second lead portion spaced from each other in a first direction. A semiconductor chip is mounted to the first lead portion. A first connector has a first portion contacting a second electrode on the chip and a second portion connected to the second lead portion. A second connector has third portion that contacts the second electrode, but at a position further away than the first portion, and a fourth portion connected to the second portion. At least a part of the second connector overlaps a part of the first connector between the first lead portion and the second lead portion.

The present disclosure provides a semiconductor structure. The semiconductor structure includes a substrate, a die stack disposed over the substrate, a heat spreader disposed over the substrate and having a surface facing the substrate, and a thermal interface material (TIM) disposed between the die stack and the heat spreader. A bottommost die of the die stack includes a surface exposed from remaining dies of the die stack from a top view perspective; and the TIM is in contact with the exposed surface of the bottommost die and the surface of the heat spreader, and is in contact with a sidewall of at least one of the plurality of dies of the die stack.

A package structure and a method for manufacturing the same are provided. The package structure includes a redistribution structure, a first electronic device, at least one second electronic device, a protection material, a heat dissipation structure and a reinforcement structure. The first electronic device is disposed on the redistribution structure. The second electronic device is disposed on the redistribution structure. The protection material is disposed between the first electronic device and the second electronic device. The heat dissipation structure is disposed on the first electronic device and the second electronic device. The reinforcement structure is disposed in an accommodating space between the heat dissipation structure and the protection material.

A semiconductor package includes: a carrier having a first side and a second side opposite the first side, the first side having a plurality of contact structures; a semiconductor die having a first side and a second side opposite the first side, the first side of the semiconductor die having a plurality of pads attached to the plurality of contact structures at the first side of the carrier; a metal plate attached to the second side of the semiconductor die, the metal plate having a size that is independent of the size of the carrier and based on an expected thermal load to be presented by the semiconductor die; and an encapsulant confined by the carrier and the metal plate and laterally surrounding an edge of the semiconductor die. Corresponding methods of production are also provided.

A semiconductor device includes a first insulating resin member sealing a mounting surface of a lead frame, and a second insulating resin member sealing a heat dissipating surface. The second insulating resin member contains a filler having a maximum diameter of 0.02 mm to 0.075 mm. The second insulating resin member includes a thin molded portion formed in contact with the heat dissipating surface of the lead frame. The thin molded portion has a thickness 1.1 times to 2 times the maximum diameter of the filler. The semiconductor device includes, at an interface between the first insulating resin member and the second insulating resin member, a mixture layer in which these resins are mixed with each other.

The present disclosure provides a semiconductor structure. The semiconductor includes a substrate, a block bonded on the substrate, a first die bonded on the block, a second die disposed over the first die, and a heat spreader covering the block and having a surface facing toward and proximal to the block. A thermal conductivity of the heat spreader is higher than a thermal conductivity of the block.

A semiconductor device includes a first insulating resin member sealing a mounting surface of a lead frame, and a second insulating resin member sealing a heat dissipating surface. The second insulating resin member contains a filler having a maximum diameter of 0.02 mm to 0.075 mm. The second insulating resin member includes a thin molded portion formed in contact with the heat dissipating surface of the lead frame. The thin molded portion has a thickness 1.1 times to 2 times the maximum diameter of the filler. The semiconductor device includes, at an interface between the first insulating resin member and the second insulating resin member, a mixture layer in which these resins are mixed with each other.

Provided is a semiconductor package using a conductive metal structure, and more particularly, to a semiconductor package using a conductive metal structure formed in a clip or a column, through which a semiconductor chip and a lead of a lead frame are electrically connected to each other and an area where the semiconductor chip and the metal structure are adhered may be effectively improved so that productivity may increase and durability and electrical connection properties may be improved. The semiconductor package according to the present invention includes: a semiconductor chip; an aluminum pad formed on an upper part of the semiconductor chip; and a conductive metal structure adhered to the aluminum pad by a solder-based second adhesive layer, wherein the second adhesive layer includes intermetallic compounds (IMC) distributed to a lower fixed part thereof near the aluminum pad.

A semiconductor package includes a redistribution substrate having a first redistribution layer, a semiconductor chip on the redistribution substrate and connected to the first redistribution layer, a vertical connection conductor on the redistribution substrate and electrically connected to the semiconductor chip through the first redistribution layer, a core member having a first through-hole accommodating the semiconductor chip and a second through-hole accommodating the vertical connection conductor, and an encapsulant covering at least a portion of each of the semiconductor chip, the vertical connection conductor, and the core member, the encapsulant filling the first and second through-holes, wherein the vertical connection conductor has a cross-sectional shape with a side surface tapered to have a width of a lower surface thereof is narrower than a width of an upper surface thereof, and the first and second through-holes have a cross-sectional shape tapered in a direction opposite to the vertical connection conductor.

A semiconductor device includes a first lead portion and a second lead portion spaced from each other in a first direction. A semiconductor chip is mounted to the first lead portion. A first connector has a first portion contacting a second electrode on the chip and a second portion connected to the second lead portion. A second connector has third portion that contacts the second electrode, but at a position further away than the first portion, and a fourth portion connected to the second portion. At least a part of the second connector overlaps a part of the first connector between the first lead portion and the second lead portion.